A semiconductor package includes an outer redistributed line (RDL) structure, a first semiconductor chip disposed on the outer RDL structure, a stack module stacked on the first semiconductor chip, and a bridge die stacked on the outer RDL structure. A portion of the stack module laterally protrudes from a side surface of the first semiconductor chip. The bridge die supports the protruding portion of the stack module. The stack module includes an inner RDL structure, a second semiconductor chip disposed on the inner RDL structure, a capacitor die disposed on the inner RDL structure, and an inner encapsulant. The capacitor die acts as a decoupling capacitor of the second semiconductor chip.

Disclosed is a semiconductor package comprising a first semiconductor chip, a second semiconductor chip on a first surface of the first semiconductor chip, and a plurality of conductive pillars on the first surface of the first semiconductor chip and adjacent to at least one side of the second semiconductor chip. The first semiconductor chip includes a first circuit layer adjacent to the first surface of the first semiconductor chip. The second semiconductor chip and the plurality of conductive pillars are connected to the first surface of the first semiconductor chip.

Embodiments disclosed herein include electronic packages. In an embodiment, an electronic package comprises a package substrate, and a die module coupled to the package substrate. In an embodiment, the die module comprises a die and a chiplet coupled to the die. In an embodiment, the chiplet is coupled to the die with a hybrid bonding interconnect architecture.

Disclosed is a micro light-emitting component, a micro light-emitting diode, and a transfer layer. The transfer layer has a recess for receiving the micro light-emitting diode to permit the micro light-emitting diode to be retained by the transfer layer, and is transformable from a first state, in which the transfer layer is deformed by the micro light-emitting diode to form the recess, to a second state, in which the micro light-emitting diode received in the recess is retained by the transfer layer. Also disclosed are micro light-emitting component matrix and a method for manufacturing the micro light-emitting component matrix.

A light emitting diode includes: a light emitting layer arranged on at least part of a first semiconductor layer, and a second semiconductor layer; a local defect region over a portion of the second semiconductor layer and extending downward to the first semiconductor layer; a metal layer over a portion of the second semiconductor layer; an insulating layer covering the metal layer, the second and first semiconductor layers in the local defect region, with opening structures over the local defect region and the metal layer, respectively; and an electrode structure over the insulating layer and having a first layer and a second layer, and including a first-type electrode region and a second-type electrode region; wherein an upper surface and a lower surface of the first layer are not flat, and a lower surface of the second layer are both flat.

A chip removing device and a chip removing method are provided. The chip removing device includes: a carrier substrate, a laser generation module, and a blowing module. The carrier substrate carries at least one substrate, and a plurality of chips disposed on the substrate. The laser generation module corresponds to the carrier substrate and is used to apply a laser beam to the chip to reduce the bonding force between the chip and the substrate. The blowing module is disposed above the carrier substrate and close to the substrate for applying a gas to the chip to blow the chip away from the substrate.

The application discloses a light-emitting device including a carrier which includes an insulating layer, an upper conductive layer formed on the insulating layer, a plurality of conducting vias passing through the insulating layer, and a lower conductive layer formed under the insulating layer; four light-emitting elements arranged in rows and columns flipped on the carrier; and a light-passing unit formed on the carrier and covering the four light-emitting elements; wherein each of the light-emitting elements including a first light-emitting bare die emitting a first dominant wavelength, a second light-emitting bare die emitting a second dominant wavelength, and a third light-emitting bare die emitting a third dominant wavelength; and wherein two adjacent first light-emitting bare die in a row has a first distance W1, two adjacent first light-emitting bare die in a column has a second distance W2, and W1 is the same as W2.

A radio frequency (“RF”) transistor amplifier die includes a semiconductor layer structure having a plurality of transistor cells, and an insulating layer on a surface of the semiconductor layer structure. Conductive pillar structures protrude from the insulating layer opposite the surface of the semiconductor layer structure, and are configured to provide input signal, output signal, or ground connections to the transistor cells. The ground connections are arranged between the input and/or output signal connections to the transistor cells. Related devices and packages are also discussed.

A semiconductor device and a semiconductor package including the same are provided. The semiconductor device includes a semiconductor element; a protective layer disposed adjacent to the surface of the semiconductor element, the protective layer defining an opening to expose the semiconductor element; a first bump disposed on the semiconductor element; and a second bump disposed onto the surface of the protective layer. The first bump has a larger cross-section surface area than the second bump.

A method for soldering electronic components includes providing a circuit substrate; providing a plurality of electronic components; placing the plurality of electronic components onto the circuit substrate; applying a conductor between the plurality of electronic components and the circuit substrate; providing an energy source which projects an energy beam with a first coverage; enlarging the energy beam and projecting the energy beam onto the circuit substrate with a second coverage; and melting the conductor within the second coverage via the energy beam and fixing the corresponding electronic components on the circuit substrate through the melted conductor. Besides, a method for manufacturing a LED display is disclosed.