A memory package structure includes a substrate, a memory chip and a plurality of resistors. The substrate has a plurality of pins. The pins include a plurality of data pins used to transfer data signal. The memory chip is located on the substrate. A plurality of bonding pads is located on the memory chip. The bonding pads include a plurality of data pads used to receive the data signal from data pins or transfer the data signal from the memory chip. The resistors is located on the substrate. Each data pad is connected to a corresponding one of the data pins through a corresponding one of the resistors.

A semiconductor device includes a semiconductor element circuit, a conductive support and a sealing resin. The conductive support includes a die pad, first terminals spaced in a first direction, second terminals spaced in the first direction and opposite to the first terminals in a second direction perpendicular to the first direction, and a support terminal connected to the die pad. The sealing resin encapsulates portions of the first and second terminals, a portion of the support terminal, the semiconductor element circuit and the die pad. The sealing resin has two first side surfaces spaced apart in the second direction and two second side surfaces spaced apart in the first direction. The first terminals and second terminals are exposed from the first side surfaces, while none of the elements of the conductive support is exposed from the second side surfaces.

Multichip package manufacturing process is disclosed to form external pins at one side or each side of die-bonding area of package carrier board and to bond first IC and second IC to die-bonding area in stack. First IC and second IC each comprise transistor layer with core circuits, plurality of metal layers, plurality of VIA layers and solder pad layer. During production of first IC, design of at least one metal layer, VIA layer and dummy pads can be modified according to change of design of second IC. After chip probing, die sawing and bonding, wire bonding, packaging and final test are performed to package the package carrier board, first IC and second IC into automotive multichip package, achieving purpose of first IC only need to modify at least one layer or more than one layer to cooperate with second IC design change to carry out multichip packaging process.

A semiconductor device includes a cell area in which a plurality of memory cells are arranged in an array structure, and a peripheral area in which circuits configured to drive the memory cells are arranged, the peripheral area being next to the cell area. The cell area is divided into a plurality of banks, and the plurality of banks comprise first banks having a base size and second banks having a size of 1/(2*n) (wherein n is an integer greater than or equal to 1) of the base size. The plurality of banks are arranged in a first direction and a second direction perpendicular to the first direction, and the semiconductor device has a shape of a rectangular chip which is elongated in the second direction.

An electronic substrate and an electronic device are provided. The electronic substrate includes a base, a protruding portion, and a bonding pad. The protruding portion and the bonding pad are disposed on the base. The bonding pad is not overlapped with a boundary of the protruding portion.

A semiconductor device includes a first lead having a base extending in a first direction, and an IC on the base. The semiconductor device also includes a second lead, a third lead and fourth leads. The second lead includes a first belt-like section on one side of the base in the first direction, extending in a second direction, and paired second belt-like sections extending in the first direction from the first belt-like section. The third lead is on one side in the first direction. The fourth leads are on one side of the third lead in the first direction. First switching elements are bonded to the third lead. Second switching elements are respectively bonded to the fourth leads. The base overlaps with the first belt-like section 121 when viewed in the first direction. At least a part of the base is between the second belt-like sections.

A semiconductor die includes first pads, switches that are electrically connected with the first pads, respectively, a test signal generator that generates test signals and to transmit the test signals to the switches, internal circuits that receive first signals through the first pads and the switches, to perform operations based on the first signals, and to output second signals through the switches and the first pads based on a result of the operations, and a switch controller that controls the switches so that the first pads communicate with the test signal generator during a test operation and that the first pads communicate with the internal circuits after a completion of the test operation.

A semiconductor device includes a semiconductor element circuit, a conductive support and a sealing resin. The conductive support includes a die pad, first terminals spaced in a first direction, second terminals spaced in the first direction and opposite to the first terminals in a second direction perpendicular to the first direction, and a support terminal connected to the die pad. The sealing resin encapsulates portions of the first and second terminals, a portion of the support terminal, the semiconductor element circuit and the die pad. The sealing resin has two first side surfaces spaced apart in the second direction and two second side surfaces spaced apart in the first direction. The first terminals and second terminals are exposed from the first side surfaces, while none of the elements of the conductive support is exposed from the second side surfaces.

A semiconductor structure includes a substrate, a chip, a first edge pad, a first central pad, a second edge pad, and a second central pad. The substrate has a first surface and a conductive trace extending above the substrate. The chip is above the first surface of the substrate, and has a sidewall, a central area, and an edge area. The first edge pad is on the edge area. The first central pad is on the central area and electrically connected to the first edge pad. The second edge pad is on the edge area of the chip. A distance between the first edge pad and the sidewall of the chip is substantially smaller than a distance between the second edge pad and the sidewall of the chip. The second central pad is on the central area of the chip and electrically connected to the second edge pad.

A structure of semiconductor device is provided, including a first circuit structure, formed on a first substrate. A first test pad is disposed on the first substrate. A second circuit structure is formed on a second substrate. A second test pad is disposed on the second substrate. A first bonding pad of the first circuit structure is bonded to a second bonding pad of the second circuit structure. One of the first test pad and the second test pad is an inner pad while another one of the first test pad and the second test pad is an outer pad, wherein the outer pad surrounds the inner pad.