A semiconductor chip with different chip pads and a method for forming a semiconductor chip with different chip pads are disclosed. In some embodiments, a semiconductor chip includes a chip front side, a first chip pad located on the chip front side, a second chip pad located on the chip front side and an electrically insulating material located between the first chip pad and the second chip pad, wherein the first chip pad includes a surface layer predominantly comprising copper and the second chip pad includes a surface layer predominantly comprising aluminum.

Implementations of a semiconductor device may include: a silicon substrate including a first side and a second side. The second side of the substrate may include an active area. The device may include a metal stack including: a back metallization on the first side of the substrate, an electroplated metal layer on the back metallization; and an evaporated gold metal layer on the electroplated metal layer.

Capacitive couplings in a direct-bonded interface for microelectronic devices are provided. In an implementation, a microelectronic device includes a first die and a second die direct-bonded together at a bonding interface, a conductive interconnect between the first die and the second die formed at the bonding interface by a metal-to-metal direct bond, and a capacitive interconnect between the first die and the second die formed at the bonding interface. A direct bonding process creates a direct bond between dielectric surfaces of two dies, a direct bond between respective conductive interconnects of the two dies, and a capacitive coupling between the two dies at the bonding interface. In an implementation, a capacitive coupling of each signal line at the bonding interface comprises a dielectric material forming a capacitor at the bonding interface for each signal line. The capacitive couplings result from the same direct bonding process that creates the conductive interconnects direct-bonded together at the same bonding interface.

An optoelectronic device (50) comprising a semiconductor body (10a, 10b, 10c) having an optically active region (12), a carrier (60), and a pair of connection layers (30a, 30b, 30c) having a first connection layer (32) and a second connection layer (34), wherein: the semiconductor body is disposed on the carrier, the first connection layer is disposed between the semiconductor body and the carrier and is connected to the semiconductor body, the second connection layer is disposed between the first connection layer and the carrier, at least one layer selected from the first connection layer and the second connection layer contains a radiation-permeable and electrically conductive oxide, and the first connection layer and the second connection layer are directly connected to each other at least in regions in one or more bonding regions, so that the pair of connection layers is involved in the mechanical connection of the semiconductor body to the carrier. A production process is also specified.

A semiconductor chip with different chip pads and a method for forming a semiconductor chip with different chip pads are disclosed. In some embodiments, the method comprises depositing a barrier layer over a chip front side, depositing a copper layer after depositing the barrier layer, and removing a part of the copper layer located outside a first chip pad region, wherein a remaining portion of the copper layer within the first chip pad region forms a surface layer of the chip pad. The method further comprises removing a part of the barrier layer located outside the first chip pad region.

A semiconductor package includes a package substrate including a first pad; a first memory device arranged on the package substrate and including first and second semiconductor chips stacked in a vertical direction; and a first chip connecting member electrically connecting the first semiconductor chip to the package substrate. The first semiconductor chip includes a first cell structure; a first peripheral circuit structure; a first bonding pad; and a first input/output pad electrically connected to the first pad of the package substrate through the first chip connection member. The second semiconductor chip includes a second cell structure; and a second bonding pad connected to the first bonding pad. A part of the first peripheral circuit structure protrudes from a sidewall of the second semiconductor chip so as not to overlap the second semiconductor chip.

An electronic device includes a substrate, a first metal layer, a second metal layer, a third metal layer, pads, an electronic element, and a switching element. The first metal layer, the second metal layer, and the third metal layer are disposed on the substrate. The pads are disposed on the substrate, including a first pad, a second pad, and a third pad. The electronic element is disposed on the substrate and connected to the first pad. The switching element is disposed on the substrate and connected to the second pad. The second metal layer is disposed between the first metal layer and the third metal layer. The first pad and the first metal layer belong to the same layer. The first pad is electrically connected to the second pad through the first metal layer and the third metal layer.

A semiconductor device includes: a semiconductor substrate having a first main surface; an aluminum electrode having a first surface facing the first main surface and a second surface opposite to the first surface, the aluminum electrode being disposed on the semiconductor substrate; a passivation film that covers a peripheral edge of the second surface and that is provided with an opening from which a portion of the second surface is exposed; a copper film disposed on the second surface exposed from the opening so as to be separated from the passivation film; and a metal film disposed on the second surface exposed from between the passivation film and the copper film. The metal film is constituted of at least one selected from a group consisting of a nickel film, a tantalum film, a tantalum nitride film, a tungsten film, a titanium film, and a titanium nitride film.

A three-dimensional (3D) bonded semiconductor structure is provided in which a first bonding oxide layer of a first semiconductor structure is bonded to a second bonding oxide layer of a second semiconductor structure. Each of the first and second bonding oxide layers has a metallic capacitor plate structure embedded therein, wherein each metallic capacitor plate structure has a columnar grain microstructure. A high-k dielectric material is present between the first and second metallic capacitor plate structures. The presence of the columnar grain microstructure in the metallic capacitor plate structures can provide an embedded capacitor that has an improved quality factor, Q.

A bonded structure can include a first element having a first conductive interface feature and a second element having a second conductive interface feature. An integrated device can be coupled to or formed with the first element or the second element. The first conductive interface feature can be directly bonded to the second conductive interface feature to define an interface structure. The interface structure can be disposed about the integrated device in an at least partially annular profile to connect the first and second elements.