A semiconductor device is provided and includes first and second semiconductor chips bonded together. The first chip includes a first substrate, a first insulating layer disposed on the first substrate and having a top surface, a first metal pad embedded in the first insulating layer and having a top surface substantially planar with the top surface of the first insulating layer, and a first barrier disposed between the first insulating layer and the first metal pad. The second chip includes a second substrate, a second insulating layer, a second metal pad, and a second barrier with a similar configuration to the first chip. The top surfaces of the first and second insulating layers are bonded to provide a bonding interface, the first and second metal pads are connected, and a portion of the first insulating layer is in contact with a side region of the first metal pad.

According to one embodiment, a semiconductor device includes a first wafer, a first wiring layer, a first insulating layer, a first electrode, a second wafer, a second wiring layer, a second insulating layer, a second electrode, and a first layer. The first electrode includes a first surface, a second surface, a third surface, and a fourth surface. The second electrode includes a fifth surface, a sixth surface, a seventh surface, a second side surface, and an eighth surface. The first layer is provided between the fourth surface and a portion of the first insulating layer that surrounds the fourth surface, and is provided away from the third surface in the first direction.

A package includes a carrier substrate, a first die, and a second die. The first die includes a first bonding layer, a second bonding layer opposite to the first bonding layer, and an alignment mark embedded in the first bonding layer. The first bonding layer is fusion bonded to the carrier substrate. The second die includes a third bonding layer. The third bonding layer is hybrid bonded to the second bonding layer of the first die.

Examples described herein generally relate to multi-chip devices having stacked chips. In an example, a multi-chip device includes a chip stack that includes chips. One or more chips each includes a selection circuit and a broken via pillar that includes first and second continuous portions. The first continuous portion includes a through substrate via and a first metal line. The second continuous portion includes a second metal line. The first and second metal lines are disposed within dielectric layers disposed on a side of the semiconductor substrate of the respective chip. The first and second continuous portions are aligned in a direction normal to the side of the semiconductor substrate. An input node of the selection circuit is connected to one of the first or second metal line. An output node of the selection circuit is connected to the other of the first or second metal line.

A package includes a carrier substrate, a first die, and a second die. The first die includes a first bonding layer, a second bonding layer opposite to the first bonding layer, and an alignment mark embedded in the first bonding layer. The first bonding layer is fusion bonded to the carrier substrate. The second die includes a third bonding layer. The third bonding layer is hybrid bonded to the second bonding layer of the first die.

A solid-state imaging device capable of preventing variation in bonding strength in a bonding plane between a first semiconductor substrate and a second semiconductor substrate is provided. The solid-state imaging device includes a first semiconductor substrate having a plurality of first conductors, and a second semiconductor substrate bonded to the first semiconductor substrate and having a plurality of second conductors. In a bonding plane between the first and second semiconductor substrates, the device includes regions where the conductors overlap, regions where insulating films and the conductors overlap, and regions where the insulating films overlap. The proportion of areas where the first insulating films and the second insulating films are bonded together to the bonding area between the first semiconductor substrate and the second semiconductor substrate is constant before and after the first semiconductor substrate and the second semiconductor substrate are bonded together.

A semiconductor package structure and a method of manufacturing the semiconductor package structure are disclosed. The semiconductor package structure includes a first semiconductor device having an active surface, a redistribution structure in electrical connection with the first semiconductor device, and a second semiconductor device bonded to the active surface of the first semiconductor device, and disposed between the first semiconductor device and the redistribution structure.

A semiconductor package structure and a method of manufacturing the semiconductor package structure are disclosed. The semiconductor package structure includes a first semiconductor device having an active surface, a redistribution structure in electrical connection with the first semiconductor device, and a second semiconductor device bonded to the active surface of the first semiconductor device, and disposed between the first semiconductor device and the redistribution structure.

A package structure includes a plurality of stacked die units and an insulating encapsulant. The plurality of stacked die units is stacked on top of one another, where each of the plurality of stacked die units include a first semiconductor die, a first bonding chip. The first semiconductor die has a plurality of first bonding pads. The first bonding chip is stacked on the first semiconductor die and has a plurality of first bonding structure. The plurality of first bonding structures is bonded to the plurality of first bonding pads through hybrid bonding. The insulating encapsulant is encapsulating the plurality of stacked die units.

Dies and/or wafers including conductive features at the bonding surfaces are stacked and direct hybrid bonded at a reduced temperature. The surface mobility and diffusion rates of the materials of the conductive features are manipulated by adjusting one or more of the metallographic texture or orientation at the surface of the conductive features and the concentration of impurities within the materials.