Patent classifications
H01L2224/08111
SEMICONDUCTOR DEVICE, MANUFACTURING METHOD, AND SOLID-STATE IMAGING DEVICE
The present technology relates to a semiconductor device, a manufacturing method, and a solid-state imaging device which are capable of suppressing a decrease in bonding strength and preventing a poor electrical connection or peeling when two substrates are bonded to each other. Provided is a semiconductor device, including: a first substrate including a first electrode including a metal; and a second substrate bonded to the first substrate and including a second electrode including a metal. An acute-angled concavo-convex portion is formed on a side surface of a groove in which the first electrode is formed and a side surface of a groove in which the second electrode metal-bonded to the first electrode is formed. The present technology can be, for example, applied to a solid-state imaging device such as a CMOS image sensor.
Method and structure of three-dimensional chip stacking
A method includes placing a first plurality of device dies over a first carrier, with the first plurality of device dies and the first carrier in combination forming a first composite wafer. The first composite wafer is bonded to a second wafer, and the first plurality of device dies is bonded to a second plurality of device dies in the second wafer through hybrid bonding. The method further includes de-bonding the first carrier from the first plurality of device dies, encapsulating the first plurality of device dies in an encapsulating material, and forming an interconnect structure over the first plurality of device dies and the encapsulating material.
LARGE METAL PADS OVER TSV
Representative techniques and devices including process steps may be employed to mitigate the potential for delamination of bonded microelectronic substrates due to metal expansion at a bonding interface. For example, a metal pad having a larger diameter or surface area (e.g., oversized for the application) may be used when a contact pad is positioned over a TSV in one or both substrates.
HEATSINK FOR RING TYPE INTEGRATED CIRCUITS
The systems and cold plate pedestal and assembly described decrease mechanical stresses in integrated circuits, while also providing efficient thermal coupling between heat producing components and a cold plate. A cold plate assembly includes a cold plate with a pedestal portion a groove formed in a surface of the pedestal portion. The cold plate assembly also includes a thermal pad layer formed in the groove and a phase change material (PCM) layer formed on the surface of the pedestal portion and a surface of the thermal pad layer formed in the groove.
DUAL-INTERFACE IC CARD MODULE
The disclosure relates to a dual-interface integrated circuit (IC) card module for use in a dual-interface IC card. Embodiments disclosed include a dual-interface integrated circuit card module (150), the module comprising: a substrate (104) having first and second opposing surfaces; a contact pad (102) on the first surface of the substrate; an integrated circuit (110) on the second surface of the substrate (104), the integrated circuit (110) having electrical connections to the contact pad (102) through the substrate (104); and a pair of antenna pads (108) disposed in recesses (103) in the second surface of the substrate (104) and electrically connected to corresponding antenna connections on the integrated circuit (110).
Packaging Mechanisms for Dies with Different Sizes of Connectors
Embodiments of mechanisms for testing a die package with multiple packaged dies on a package substrate use an interconnect substrate to provide electrical connections between dies and the package substrate and to provide probing structures (or pads). Testing structures, including daisy-chain structures, with metal lines to connect bonding structures connected to signals, power source, and/or grounding structures are connected to probing structures on the interconnect substrate. The testing structures enable determining the quality of bonding and/or functionalities of packaged dies bonded. After electrical testing is completed, the metal lines connecting the probing structures and the bonding structures are severed to allow proper function of devices in the die package. The mechanisms for forming test structures with probing pads on interconnect substrate and severing connecting metal lines after testing could reduce manufacturing cost.
Method for producing a connection between component parts, and component made of component parts
A method for producing a connection between component parts and a component made of component parts are disclosed. In an embodiment, a includes providing a first component part having a first exposed insulation layer and a second component part having a second exposed insulation layer, wherein each of the insulation layers has at least one opening, joining together the first and second component parts such that the opening of the first insulation layer and the opening of the second insulation layer overlap in top view, wherein an Au layer and a Sn layer are arranged one above the other in at least one of the openings and melting the Au layer and the Sn layer to form an AuSn alloy, wherein the AuSn alloy forms a through-via after cooling electrically conductively connecting the first component part to the second component part.
SEMICONDUCTOR STRUCTURE
A semiconductor structure including a first substrate, a first conductive layer, and first bonding pads is provided. The first conductive layer is located on the first substrate. The first conductive layer includes a main body portion and an extension portion. The extension portion is connected to the main body portion and includes a terminal portion away from the main body portion. The first bonding pads are connected to the main body portion and the extension portion. The number of the first bonding pads connected to the terminal portion of the extension portion is plural.
Metal pads over TSV
Representative techniques and devices including process steps may be employed to mitigate the potential for delamination of bonded microelectronic substrates due to metal expansion at a bonding interface. For example, a metal pad having a larger diameter or surface area (e.g., oversized for the application) may be used when a contact pad is positioned over a TSV in one or both substrates.
Dual-interface IC card module
The disclosure relates to a dual-interface integrated circuit (IC) card module for use in a dual-interface IC card. Embodiments disclosed include a dual-interface integrated circuit card module (150), the module comprising: a substrate (104) having first and second opposing surfaces; a contact pad (102) on the first surface of the substrate; an integrated circuit (110) on the second surface of the substrate (104), the integrated circuit (110) having electrical connections to the contact pad (102) through the substrate (104); and a pair of antenna pads (108) disposed in recesses (103) in the second surface of the substrate (104) and electrically connected to corresponding antenna connections on the integrated circuit (110).