Apparatus and method for filling and optionally bumping through-silicon vias (TSVs) in device circuits utilizing inkjet printheads for ejecting sufficiently small droplets of conductive nanoparticle inks into the TSVs. Ejected drops are accurately impinged along the length of each TSV within a substrate being heated to drive evaporation of the solvent carrying the metal nanoparticles into the trenches while not de-encapsulating the particles. Once all TSVs are filled, and optionally bumped, to a desired level while they are being heated then bonding and sintering can be performed, such as utilizing thermocompression bonding to another integrated circuit.

Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a semiconductor device includes a substrate, and a plurality of contact pads disposed over the substrate. The contact pads may be arranged in a ball grid array (BGA), and the may include a plurality of corners. A metal dam is disposed around each of the plurality of corners, such as corners of the BGA.

A semiconductor device has a semiconductor wafer and a first conductive layer formed over the semiconductor wafer as contact pads. A first insulating layer formed over the first conductive layer. A second conductive layer including an interconnect site is formed over the first conductive layer and first insulating layer. The second conductive layer is formed as a redistribution layer. A second insulating layer is formed over the second conductive layer. An opening is formed in the second insulating layer over the interconnect site. The opening extends to the first insulating layer in an area adjacent to the interconnect site. Alternatively, the opening extends partially through the second insulating layer in an area adjacent to the interconnect site. An interconnect structure is formed within the opening over the interconnect site and over a side surface of the second conductive layer. The semiconductor wafer is singulated into individual semiconductor die.

The present invention discloses small-size battery protection packages and provides a process of fabricating small-size battery protection packages. A battery protection package includes a first common-drain metal oxide semiconductor field effect transistor (MOSFET), a second common-drain MOSFET, a power control integrated circuit (IC), a plurality of solder balls, a plurality of conductive bumps, and a packaging layer. The power control IC is vertically stacked on top of the first and second common-drain MOSFETs. At least a majority portion of the power control IC and at least majority portions of the plurality of solder balls are embedded into the packaging layer. The process of fabricating battery protection packages includes steps of fabricating power control ICs; fabricating common-drain MOSFET wafer; integrating the power control ICs with the common-drain MOSFET wafer and connecting pinouts; forming a packaging layer; applying grinding processes; forming a metal layer; and singulating battery protection packages.

A method of manufacturing an electronic component module and the electronic component module manufactured by the manufacturing method includes bumps, each including a thicker portion having a relatively large thickness and a thinner portion having a relatively small thickness and formed on one surface of the substrate. When looking at the electronic component in a mounted state in a plan view, the thicker portion is positioned on a side of a corresponding outer terminal closer to a center of the electronic component and the thinner portion is positioned on the opposite side of the corresponding outer terminal. In the plan view, joining portions joining the outer terminals respectively to the bumps are formed such that a height of each joining portion on the opposite side is lower than a height of the joining portion on the side closer to the center of the electronic component.

Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a semiconductor device includes a substrate, and a plurality of contact pads disposed over the substrate. The contact pads may be arranged in a ball grid array (BGA), and the may include a plurality of corners. A metal dam is disposed around each of the plurality of corners, such as corners of the BGA.

The present invention discloses small-size battery protection packages and provides a process of fabricating small-size battery protection packages. A battery protection package includes a first common-drain metal oxide semiconductor field effect transistor (MOSFET), a second common-drain MOSFET, a power control integrated circuit (IC), a plurality of solder balls, a plurality of conductive bumps, and a packaging layer. The power control IC is vertically stacked on top of the first and second common-drain MOSFETs. At least a majority portion of the power control IC and at least majority portions of the plurality of solder balls are embedded into the packaging layer. The process of fabricating battery protection packages includes steps of fabricating power control ICs; fabricating common-drain MOSFET wafer; integrating the power control ICs with the common-drain MOSFET wafer and connecting pinouts; forming a packaging layer; applying grinding processes; forming a metal layer; and singulating battery protection packages.

Embodiments of the present disclosure are directed toward formation of solder and copper interconnect structures and associated techniques and configurations. In one embodiment, a method includes providing an integrated circuit (IC) substrate and depositing a solderable material on the IC substrate using an ink deposition process, a binder printing system, or a powder laser sintering system. In another embodiment, a method includes providing an integrated circuit (IC) substrate and depositing a copper powder on the IC substrate using an additive process to form a copper interconnect structure. Other embodiments may be described and/or claimed.

The present invention discloses small-size battery protection packages and provides a process of fabricating small-size battery protection packages. A battery protection package includes a first common-drain metal oxide semiconductor field effect transistor (MOSFET), a second common-drain MOSFET, a power control integrated circuit (IC), a plurality of solder balls, a plurality of conductive bumps, and a packaging layer. The power control IC is vertically stacked on top of the first and second common-drain MOSFETs. At least a majority portion of the power control IC and at least majority portions of the plurality of solder balls are embedded into the packaging layer. The process of fabricating battery protection packages includes steps of fabricating power control ICs; fabricating common-drain MOSFET wafer; integrating the power control ICs with the common-drain MOSFET wafer and connecting pinouts; forming a packaging layer; applying grinding processes; forming a metal layer; and singulating battery protection packages.

Some implementations described herein provide a semiconductor package including an integrated circuit die mounted to an interposer using connection structures. An underfill material between the integrated circuit die and the interposer includes shaped fillets that are below a plane corresponding to a bottom surface of the integrated circuit die. The underfill material including the shaped fillets reduces a likelihood of stresses and/or strains that damage a mold compound from transferring to the mold compound from the underfill material, the integrated circuit die, and/or the interposer. In this way, a quality and reliability of the semiconductor package including the underfill material with the shaped fillets is reduced. By improving the quality and reliability of the semiconductor package, a yield of the semiconductor package may increase to decrease a cost of the semiconductor package.