Provided is a semiconductor package and a method of making same, including a first package substrate; a first semiconductor chip mounted on the first package substrate and having a first pad and a second pad, wherein the first pad is provided on a top of the first semiconductor chip and the second pad is provided on a bottom of the first semiconductor chip, the bottom being an opposite surface of the top; and a clad metal provided on the first pad and electrically connecting the first semiconductor chip to one of a second semiconductor chip and second package substrate provided on the top of the first semiconductor chip.

Provided is a semiconductor package and a method of making same, including a first package substrate; a first semiconductor chip mounted on the first package substrate and having a first pad and a second pad, wherein the first pad is provided on a top of the first semiconductor chip and the second pad is provided on a bottom of the first semiconductor chip, the bottom being an opposite surface of the top; and a clad metal provided on the first pad and electrically connecting the first semiconductor chip to one of a second semiconductor chip and second package substrate provided on the top of the first semiconductor chip.

A sintering powder comprising: a first type of metal particles having a mean longest dimension of from 100 nm to 50 m.

A sintering powder comprising: a first type of metal particles having a mean longest dimension of from 100 nm to 50 m.

A method for forming a packaged semiconductor device includes attaching a first major surface of a semiconductor die to a plurality of protrusions extending from a package substrate. A top surface of each protrusion has a die attach material, and the plurality of protrusions define an open region between the first major surface of the semiconductor die and the package substrate. Interconnects are formed between a second major surface of the semiconductor die and the package substrate in which the second major surface opposite the first major surface. An encapsulant material is formed over the semiconductor die and the interconnects.

A method for forming a packaged semiconductor device includes attaching a first major surface of a semiconductor die to a plurality of protrusions extending from a package substrate. A top surface of each protrusion has a die attach material, and the plurality of protrusions define an open region between the first major surface of the semiconductor die and the package substrate. Interconnects are formed between a second major surface of the semiconductor die and the package substrate in which the second major surface opposite the first major surface. An encapsulant material is formed over the semiconductor die and the interconnects.