Package structures and methods for manufacturing the same are provided. The package structure includes a first bump structure formed over a first substrate. The first bump structure includes a first pillar layer formed over the first substrate and a first barrier layer formed over the first pillar layer. In addition, the first barrier layer has a first protruding portion laterally extending outside a first edge of the first pillar layer. The package structure further includes a second bump structure bonded to the first bump structure through a solder joint. In addition, the second bump structure includes a second pillar layer formed over a second substrate and a second barrier layer formed over the second pillar layer. The first protruding portion of the first barrier layer is spaced apart from the solder joint.

Package structures and methods for manufacturing the same are provided. The package structure includes a first bump structure formed over a first substrate. The first bump structure includes a first pillar layer formed over the first substrate and a first barrier layer formed over the first pillar layer. In addition, the first barrier layer has a first protruding portion laterally extending outside a first edge of the first pillar layer. The package structure further includes a second bump structure bonded to the first bump structure through a solder joint. In addition, the second bump structure includes a second pillar layer formed over a second substrate and a second barrier layer formed over the second pillar layer. The first protruding portion of the first barrier layer is spaced apart from the solder joint.

A semiconductor device includes a substrate with an opening formed through the substrate. A first electronic component is disposed over the substrate outside a footprint of the first opening. A second electronic component is disposed over the substrate opposite the first electrical component. A third electronic component is disposed over the substrate adjacent to the first electronic component. The substrate is disposed in a mold including a second opening of the mold over a first side of the substrate. The mold contacts the substrate between the first electronic component and the third electronic component. An encapsulant is deposited into the second opening. The encapsulant flows through the first opening to cover a second side of the substrate. In some embodiments, a mold film is disposed in the mold, and an interconnect structure on the substrate is embedded in the mold film.

A electronic module includes a printed circuit board (PCB) substrate, a controller substrate, a controller, a memory device, and a heat spreader. The controller is disposed on the controller substrate. The memory device is disposed on the PCB substrate. The heat spreader is disposed on the controller and the memory device, in which the heat spreader has a first portion on the controller and a second portion on the memory device, and the heat spreader has a first opening between the first portion and the second portion.

A representative system and method for manufacturing stacked semiconductor devices includes disposing an aqueous alkaline solution between a first semiconductor device and a second semiconductor device prior to bonding. In a representative implementation, first and second semiconductor devices may be hybrid bonded to one another, where dielectric features of the first semiconductor device are bonded to dielectric features of the second semiconductor device, and metal features of the first semiconductor device are bonded to metal features of the second semiconductor device. Immersion bonds so formed demonstrate a substantially lower incidence of delamination associated with bond defects.

A semiconductor package includes first and second package components stacked upon and electrically connected to each other, and first and second joint structures. The first package component includes first and second conductive bumps, the second package component includes third and fourth conductive bumps having dimensions greater than those of the first and second conductive bumps. The first joint structure partially covers the first and third conductive bumps. The second joint structure partially covers the second and the fourth conductive bumps. A first angle between a sidewall of the first conductive bump and a tangent line at an end point of a boundary of the first joint structure on the first conductive bump is greater than a second angle between a sidewall of the second conductive bump and a tangent line at an end point of a boundary of the second joint structure on the second conductive bump.

A semiconductor package includes first and second package components stacked upon and electrically connected to each other, and first and second joint structures. The first package component includes first and second conductive bumps, the second package component includes third and fourth conductive bumps having dimensions greater than those of the first and second conductive bumps. The first joint structure partially covers the first and third conductive bumps. The second joint structure partially covers the second and the fourth conductive bumps. A first angle between a sidewall of the first conductive bump and a tangent line at an end point of a boundary of the first joint structure on the first conductive bump is greater than a second angle between a sidewall of the second conductive bump and a tangent line at an end point of a boundary of the second joint structure on the second conductive bump.

Methods, techniques, and structures relating to die packaging. In one exemplary implementation, a die package interconnect structure includes a semiconductor substrate and a first conducting layer in contact with the semiconductor substrate. The first conducting layer may include a base layer metal. The base layer metal may include Cu. The exemplary implementation may also include a diffusion barrier in contact with the first conducting layer and a wetting layer on top of the diffusion barrier. A bump layer may reside on top of the wetting layer, in which the bump layer may include Sn, and Sn may be electroplated. The diffusion barrier may be electroless and may be adapted to prevent Cu and Sn from diffusing through the diffusion barrier. Furthermore, the diffusion barrier may be further adapted to suppress a whisker-type formation in the bump layer.

A semiconductor device has a substrate. A conductive layer is formed over the substrate. A duplex plated bump on lead pad is formed over the substrate. An insulating layer is formed over the conductive layer and the substrate. A portion of the insulating over the duplex plated bump on lead pad is removed using a laser direct ablation process. The insulating layer is a lamination layer. The duplex plated bump on lead pad has a wide bump on lead pad. A semiconductor die is mounted over the substrate. The semiconductor die has a composite conductive interconnect structure. The semiconductor die has a first bump and a second bump with a pitch ranging from 90-150 micrometers between the first bump and the second bump. A duplex plated contact pad is formed on a surface of the substrate opposite the duplex plated bump-on-lead pad.

A semiconductor device has a substrate. A conductive layer is formed over the substrate. A duplex plated bump on lead pad is formed over the substrate. An insulating layer is formed over the conductive layer and the substrate. A portion of the insulating over the duplex plated bump on lead pad is removed using a laser direct ablation process. The insulating layer is a lamination layer. The duplex plated bump on lead pad has a wide bump on lead pad. A semiconductor die is mounted over the substrate. The semiconductor die has a composite conductive interconnect structure. The semiconductor die has a first bump and a second bump with a pitch ranging from 90-150 micrometers between the first bump and the second bump. A duplex plated contact pad is formed on a surface of the substrate opposite the duplex plated bump-on-lead pad.