Aspects of the present disclosure include integrated circuit (IC) structures with angled interconnect elements. An IC structure according to the present disclosure can include: an IC chip interconnect surface including a radially inner region positioned within a radially outer region; and a plurality of conductive pillars extending outward from the radially inner region of the IC chip interconnect surface, relative to a radial centerline axis of the radially inner region of the IC chip interconnect surface, wherein the radially inner region of the IC chip interconnect surface is free of conductive pillars thereon.

A laser assisted bonding method comprises placing a semiconductor die on a substrate, wherein the semiconductor die has on its back surface solder bumps and on its front surface an anti-reflection layer for infrared laser; and irradiating an infrared laser beam to the semiconductor die through the anti-reflection layer, to reflow the solder bumps between the semiconductor die and the substrate via heat generated due to energy of the infrared laser beam absorbed by the semiconductor die, wherein the anti-reflection layer is configured to reduce reflection of the infrared laser beam from the semiconductor die.