A method for forming a micro bump includes the following operations. A chip at least including a silicon substrate and a Through Silicon Via (TSV) penetrating through the silicon substrate is provided. A conductive layer having a first preset size in a first direction is formed in the TSV, the first direction being a thickness direction of the silicon substrate. A connecting layer having a second preset size in the first direction is formed on a surface of the conductive layer in the TSV, where a sum of the first preset size and the second preset size is equal to an initial size of the TSV in the first direction. The silicon substrate is processed to expose the connecting layer, for forming a micro bump corresponding to the TSV.

A system and method for packaging semiconductor device is provided. An embodiment comprises forming vias over a carrier wafer and attaching a first die over the carrier wafer and between a first two of the vias. A second die is attached over the carrier wafer and between a second two of the vias. The first die and the second die are encapsulated to form a first package, and at least one third die is connected to the first die or the second die. A second package is connected to the first package over the at least one third die.

A termination structure for a nitride-based Schottky diode includes a guard ring formed by an epitaxially grown P-type nitride-based compound semiconductor layer and dielectric field plates formed on the guard ring. The termination structure is formed at the edge of the anode electrode of the Schottky diode and has the effect of reducing electric field crowding at the anode electrode edge, especially when the Schottky diode is reverse biased. In one embodiment, the P-type epitaxial layer includes a step recess to further enhance the field spreading effect of the termination structure.

A device with pillar-shaped components, includes a substrate; a wiring layer disposed on the substrate; and pillar-shaped components disposed on any of the substrate and the wiring layer, each of the pillar-shaped components having a bottom part connected to the substrate and/or the wiring layer, a top part opposed to the bottom part, and a lateral face part extending from the bottom part and connected to the top part; wherein each of the pillar-shaped components includes a first pillar-shaped part formed by plating, a second pillar-shaped part formed on the first pillar-shaped part by plating, and a ring-like projection part formed on the lateral face part to project outward and extend in a circumferential direction, and to be in a position higher than a joint position between the first pillar-shaped part and the second pillar-shaped part.

The present disclosure provides a semiconductor package, including a first device having a first joining surface, a first conductive component at least partially protruding from the first joining surface, a second device having a second joining surface facing the first joining surface, and a second conductive component at least exposing from the second joining surface. The first conductive component and the second conductive component form a joint having a first beak. The first beak points to either the first joining surface or the second joining surface.

The present disclosure provides a semiconductor package, including a first device having a first joining surface, a first conductive component at least partially protruding from the first joining surface, a second device having a second joining surface facing the first joining surface, and a second conductive component at least exposing from the second joining surface. The first conductive component and the second conductive component form a joint having a first beak. The first beak points to either the first joining surface or the second joining surface.

A system and method for packaging semiconductor device is provided. An embodiment comprises forming vias over a carrier wafer and attaching a first die over the carrier wafer and between a first two of the vias. A second die is attached over the carrier wafer and between a second two of the vias. The first die and the second die are encapsulated to form a first package, and at least one third die is connected to the first die or the second die. A second package is connected to the first package over the at least one third die.

A method of manufacturing a semiconductor device includes forming an opening in a first substrate and filling the opening with a metal to form a first connection electrode. The first substrate is then polished by chemical mechanical polishing under conditions such that a polishing rate of the metal is less that of the region surrounding the metal. The chemical mechanical polishing thereby causes the first connection electrode to protrude from the surface of the first substrate. The first substrate is stacked with a second substrate having a second connection electrode. The first and second connection electrodes are bonded by applying pressure and heating to a temperature that is below the melting point of the metal of the first connection electrode.

The present disclosure provides a semiconductor package, including a first device having a first joining surface, a first conductive component at least partially protruding from the first joining surface, a second device having a second joining surface facing the first joining surface, and a second conductive component at least exposing from the second joining surface. The first conductive component and the second conductive component form a joint having a first beak. The first beak points to either the first joining surface or the second joining surface.

The present disclosure provides a semiconductor package, including a first device having a first joining surface, a first conductive component at least partially protruding from the first joining surface, a second device having a second joining surface facing the first joining surface, and a second conductive component at least exposing from the second joining surface. The first conductive component and the second conductive component form a joint having a first beak. The first beak points to either the first joining surface or the second joining surface.