Semiconductor devices, methods of manufacture thereof, and semiconductor device packages are disclosed. In one embodiment, a semiconductor device includes an insulating material layer having openings on a surface of a substrate. One or more insertion bumps are disposed over the insulating material layer. The semiconductor device includes signal bumps having portions that are not disposed over the insulating material layer.

An electronic element for an electronic apparatus includes a substrate; a bump, disposed on the substrate for electrically connecting the electronic apparatus; and at least one under bump metal layer, disposed between the bump and the substrate for the bump to be attached to the substrate; wherein the UBM layer forms a breach structure.

A method of forming a conductive material on a semiconductor device. The method comprises removing at least a portion of a conductive pad within an aperture in a dielectric material over a substrate. The method further comprises forming a seed material at least within a bottom of the aperture and over the dielectric material, forming a protective material over the seed material within the aperture, and forming a conductive pillar in contact with the seed material through an opening in the protective material over surfaces of the seed material within the aperture. A method of forming an electrical connection between adjacent semiconductor devices, and a semiconductor device, are also described.

A method of forming a conductive material on a semiconductor device. The method comprises removing at least a portion of a conductive pad within an aperture in a dielectric material over a substrate. The method further comprises forming a seed material at least within a bottom of the aperture and over the dielectric material, forming a protective material over the seed material within the aperture, and forming a conductive pillar in contact with the seed material through an opening in the protective material over surfaces of the seed material within the aperture. A method of forming an electrical connection between adjacent semiconductor devices, and a semiconductor device, are also described.

A semiconductor device package and a method of manufacturing the same are provided. The semiconductor device package includes a circuit structure. The circuit structure includes a dielectric layer and a bonding pad. The dielectric layer has a first dielectric surface and a second dielectric surface opposite to the first dielectric surface, where the dielectric layer defines a recess in the first dielectric surface, and the recess includes a sidewall. The bonding pad is disposed in the recess, where a first pad surface of the bonding pad is adjacent to the first dielectric surface, a second pad surface of the bonding pad is adjacent to the second dielectric surface, and an edge of the bonding pad is spaced from the sidewall of the recess by a first distance.

A semiconductor device package and a method of manufacturing the same are provided. The semiconductor device package includes a circuit structure. The circuit structure includes a dielectric layer and a bonding pad. The dielectric layer has a first dielectric surface and a second dielectric surface opposite to the first dielectric surface, where the dielectric layer defines a recess in the first dielectric surface, and the recess includes a sidewall. The bonding pad is disposed in the recess, where a first pad surface of the bonding pad is adjacent to the first dielectric surface, a second pad surface of the bonding pad is adjacent to the second dielectric surface, and an edge of the bonding pad is spaced from the sidewall of the recess by a first distance.

An electronic device includes a semiconductor die having a first side, an orthogonal second side for mounting to a substrate or circuit board, a conductive terminal on the first side, the conductive terminal having a center that is spaced apart from the second side by a first distance along a direction, and a solder structure extending on the conductive terminal, the solder structure having a center that is spaced apart from the center of the conductive terminal by a non-zero second distance along the direction.

A semiconductor structure and a manufacturing method thereof are disclosed. The semiconductor structure includes a semiconductor substrate, a metal pad, a bump, a metal barrier layer, and a solder layer. The metal pad is arranged on the semiconductor substrate; the bump is arranged on the metal pad; the metal barrier layer is arranged on the side of the bump away from the metal pad; the metal barrier layer contains a storage cavity; the sidewall of the metal barrier layer is configured with an opening connecting to the storage cavity; the solder layer is arranged inside the storage cavity, and the top side of the solder layer protrudes from the upper side of storage cavity. During the flip-chip soldering process, solder is heated to overflow, the opening allows the solder flow out through the opening. The openings achieve good solder diversion in overflow, thus mitigating the problem of solder bridging between bumps.

An interconnection structure of a semiconductor chip may include an interconnection via, a lower pad, a conductive bump, and an upper pad. The interconnection via may be arranged in the semiconductor chip. The lower pad may be arranged on a lower end of the interconnection via exposed through a lower surface of the semiconductor chip. The conductive bump may be arranged on the lower pad. The upper pad may be arranged on an upper end of the interconnection via exposed through an upper surface of the semiconductor chip. The upper pad may have a width wider than a width of the interconnection via and narrower than a width of the lower pad. Thus, an electrical short between the conductive bumps may not be generated in the interconnection structure having a thin thickness.

An RF circuit module includes a module substrate, a first substrate in which a first circuit is implemented, and a second substrate in which a second circuit is implemented. The first circuit includes a control circuit that controls an operation of the second circuit. The second circuit includes a radio-frequency amplifier circuit that amplifies an RF signal. The second substrate is mounted on the first substrate. The first substrate is disposed on the module substrate such that a circuit forming surface faces the module substrate. The first substrate and the second substrate have a circuit-to-circuit connection wire that electrically connects the first circuit and the second circuit without intervening the module substrate.