A semiconductor package includes a first die, a second die, a molding compound and a redistribution structure. The first die has a first conductive pillar and a first complex compound sheath surrounding and covering a sidewall of the first conductive pillar. The second die has a second conductive pillar and a protection layer laterally surrounding the second conductive pillar. The molding compound laterally surrounds and wraps around the first and second dies, and is in contact with the first complex compound sheath of the first die. The redistribution structure is disposed on the first and second dies and the molding compound. The redistribution structure has a first via portion embedded in the first polymer dielectric layer and a second via portion embedded in the second polymer dielectric layer. A base angle of the first via portion is greater than a base angle of the second via portion.

A semiconductor package includes a semiconductor die and a redistribution structure. The semiconductor die is laterally surrounded by a molding compound, and the semiconductor die has a conductive pillar and a complex compound sheath sandwiched between the conductive pillar and the molding compound. The redistribution structure is electrically connected with the semiconductor die and comprises a first via portion at a first side of the redistribution structure and a second via portion at a second side of the redistribution structure, and a base angle of the second via portion is greater than a base angle of the first via portion.