A chip structure is provided. The chip structure includes a substrate. The chip structure includes an interconnect layer over the substrate. The chip structure includes a conductive pad over the interconnect layer. The chip structure includes a conductive bump over the conductive pad. The conductive bump has a first portion, a second portion, and a neck portion between the first portion and the second portion. The first portion is between the neck portion and the conductive pad. The neck portion is narrower than the first portion and narrower than the second portion.

A semiconductor device according to the embodiment may include a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer; a first bonding pad disposed on the light emitting structure and electrically connected to the first conductivity type semiconductor layer; a second bonding pad disposed on the light emitting structure and spaced apart from the first bonding pad, and electrically connected to the second conductivity type semiconductor layer; and a reflective layer disposed on the light emitting structure and disposed between the first bonding pad and the second bonding pad. According to the semiconductor device of the embodiment, each of the first bonding pad and the second bonding pad includes a porous metal layer having a plurality of pores and a bonding alloy layer disposed on the porous metal layer.

A semiconductor device according to the embodiment may include a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer; a first bonding pad disposed on the light emitting structure and electrically connected to the first conductivity type semiconductor layer; a second bonding pad disposed on the light emitting structure and spaced apart from the first bonding pad, and electrically connected to the second conductivity type semiconductor layer; and a reflective layer disposed on the light emitting structure and disposed between the first bonding pad and the second bonding pad. According to the semiconductor device of the embodiment, each of the first bonding pad and the second bonding pad includes a porous metal layer having a plurality of pores and a bonding alloy layer disposed on the porous metal layer.

The present disclosure provides a semiconductor structure and a method for preparing it. After planarization of the Cu layer, by means of wet etch process, Cu residues near an edge of a Cu post can be effectively removed, and a first height difference is configured to be between the Cu post and an insulating layer. Further, an Si substrate is then dry etched, so that a second height difference is configured to be between the Si substrate and the insulating layer, and the second height difference is arranged to be greater than the first height difference. In this way, a connection of Cu inside and outside the insulating layer may be further avoided, thereby effectively avoiding an influence on electrical properties of a device.

Package structures and methods for manufacturing the same are provided. The package structure includes a first bump structure formed over a first substrate. The first bump structure includes a first pillar layer formed over the first substrate and a first barrier layer formed over the first pillar layer. In addition, the first barrier layer has a first protruding portion laterally extending outside a first edge of the first pillar layer. The package structure further includes a second bump structure bonded to the first bump structure through a solder joint. In addition, the second bump structure includes a second pillar layer formed over a second substrate and a second barrier layer formed over the second pillar layer. The first protruding portion of the first barrier layer is spaced apart from the solder joint.

A semiconductor package includes an electrical connection structure. The electrical connection structure includes: a first conductive layer; a second conductive layer on the first conductive layer; and a conductive cap between the first conductive layer and the second conductive layer, the conductive cap having a hardness greater than a hardness of the first conductive layer.

A semiconductor package includes an electrical connection structure. The electrical connection structure includes: a first conductive layer; a second conductive layer on the first conductive layer; and a conductive cap between the first conductive layer and the second conductive layer, the conductive cap having a hardness greater than a hardness of the first conductive layer.

The present disclosure describes a coaxial-interconnect structure that is integrated into a semiconductor component and methods of forming the coaxial-interconnect structure. The coaxial interconnect-structure, which electrically couples circuitry of an integrated-circuit (IC) die to traces of a packaging substrate, comprises a signal core elongated about an axis, a ground shield elongated about the axis, and an insulator disposed between the signal core and the ground shield.

The present disclosure describes a coaxial-interconnect structure that is integrated into a semiconductor component and methods of forming the coaxial-interconnect structure. The coaxial interconnect-structure, which electrically couples circuitry of an integrated-circuit (IC) die to traces of a packaging substrate, comprises a signal core elongated about an axis, a ground shield elongated about the axis, and an insulator disposed between the signal core and the ground shield.

Embodiments relate to the design of a device capable of maintaining the alignment an interconnect by resisting lateral forces acting on surfaces of the interconnect. The device comprises a first body comprising a first surface with a nanoporous metal structure protruding from the first surface. The device further comprises a second body comprising a second surface with a locking structure to resist a lateral force between the first body and the second body during or after assembly of the first body and the second body.