Disclosed is an apparatus including a molded multi-die high density interconnect including: a bridge die having a first plurality of interconnects and second plurality of interconnects. The apparatus also includes a first die having a first plurality of contacts and a second plurality of contacts, where the second plurality of contacts is coupled to the first plurality of interconnects of the bridge die. The apparatus also includes a second die having a first plurality of contacts and a second plurality of contacts, where the second plurality of contacts is coupled to the second plurality of interconnects of the bridge die. The coupled second plurality of contacts and interconnects have a smaller height than the first plurality of contacts of the first die and second die.

Embodiments that allow both high density and low density interconnection between microelectronic die and motherboard via. Direct Chip Attach (DCA) are described. In some embodiments, microelectronic die have a high density interconnect with a small bump pitch located along one edge and a lower density connection region with a larger bump pitch located in other regions of the die. The high density interconnect regions between die are interconnected using an interconnecting bridge made out of a material that can support high density interconnect manufactured into it, such as silicon. The lower density connection regions are used to attach interconnected die directly to a board using DCA. The high density interconnect can utilize current Controlled Collapsed Chip Connection (C4) spacing when interconnecting die with an interconnecting bridge, while allowing much larger spacing on circuit boards.

A semiconductor package structure and a method for making a semiconductor package. As non-limiting examples, various aspects of this disclosure provide various semiconductor package structures, and methods for making thereof, that comprise a connect die that routes electrical signals between a plurality of other semiconductor die.

A display panel and a manufacturing method thereof are provided. The display panel includes a substrate, first sub-pixels and second sub-pixels. The first sub-pixels are disposed on the substrate. The first sub-pixels have a first orienting characteristic. A first adherent material is disposed between the first sub-pixels and the substrate. The second sub-pixels are disposed on the substrate. The second sub-pixels have a second orienting characteristic. A second adherent material is disposed between the second sub-pixels and the substrate. The first orienting characteristic and the second orienting characteristic are different. The first adherent material and the second adherent material are different.

A semiconductor package structure and a method for making a semiconductor package. As non-limiting examples, various aspects of this disclosure provide various semiconductor package structures, and methods for making thereof, that comprise a connect die that routes electrical signals between a plurality of other semiconductor die.

A semiconductor package including a molded power delivery module arranged between a package substrate and a semiconductor chip and including a plurality of input conductive structures and a plurality of reference conductive structures, wherein the input conductive structures alternate between the plurality of reference conductive structures, wherein the input conductive structure is electrically coupled with a chip input voltage terminal and a package input voltage terminal, wherein each of the plurality of reference conductive structures are electrically coupled with a semiconductor chip reference terminal and a package reference terminal.

A method for bonding a first substrate and a second substrate, the first substrate having at least one first connection extending from one side of the first substrate, the method comprising fabricating a first adhesive material around and along a height of the at least one first connection; and bonding the at least one first connection, the first adhesive material, and the second substrate.

A semiconductor device includes a leadframe that includes contact pins and a semiconductor die that has protruding connection formations. A flexible support member is disposed between the leadframe and the semiconductor die and supports the semiconductor die. The flexible support member has electrically conductive lines that extend between the leadframe and the semiconductor die. The electrically conductive lines of the flexible support member are electrically coupled with the contact pins of the leadframe and with the connection formations of the semiconductor die.

A semiconductor package structure includes a semiconductor die surface having a narrower pitch region and a wider pitch region adjacent to the narrower pitch region, a plurality of first type conductive pillars in the narrower pitch region, each of the first type conductive pillars having a copper-copper interface, and a plurality of second type conductive pillars in the wider pitch region, each of the second type conductive pillars having a copper-solder interface. A method for manufacturing the semiconductor package structure described herein is also disclosed.

An IC package, an electronic assembly, and methods of preventing warpage of components of an electronic assembly during fabrication of the electronic assembly are shown. An IC package including an adhesive disposed at or near at least one of four corners of a die of the IC package is shown. An electronic assembly including an IC package that includes an adhesive disposed at or near at least one of four corners of a second surface of a first substrate is shown. Methods of preventing warpage of components of an electronic assembly during fabrication of the electronic assembly that include applying an adhesive to at least one of four corners of a first surface of a first component are shown.