A display device includes a substrate including a conductive pad, a driving chip facing the substrate and including a conductive bump electrically connected to the conductive pad and an inspection bump which is insulated from the conductive pad, and an adhesive member which is between the conductive pad and the driving chip and connects the conductive pad to the driving chip. The adhesive member includes a first adhesive layer including a conductive ball, and a second adhesive layer facing the first adhesive layer, the second adhesive layer including a first area including a color-changing material, and a second area adjacent to the first area and excluding the color-changing material.

An integrated circuit die includes input buffer circuits that are enabled during an input mode of operation in response to first control signals to transmit input signals into the integrated circuit die from conductive bumps. Each of the input buffer circuits is coupled to one of the conductive bumps. The integrated circuit die also includes output buffer circuits that are each coupled to one of the conductive bumps. The output buffer circuits are enabled during an output mode of operation in response to second control signals to transmit output signals from the integrated circuit die to the conductive bumps. The input buffer circuits are disabled from transmitting signals during the output mode of operation in response to the first control signals. The output buffer circuits are disabled from transmitting signals during the input mode of operation in response to the second control signals.

An integrated circuit die includes input buffer circuits that are enabled during an input mode of operation in response to first control signals to transmit input signals into the integrated circuit die from conductive bumps. Each of the input buffer circuits is coupled to one of the conductive bumps. The integrated circuit die also includes output buffer circuits that are each coupled to one of the conductive bumps. The output buffer circuits are enabled during an output mode of operation in response to second control signals to transmit output signals from the integrated circuit die to the conductive bumps. The input buffer circuits are disabled from transmitting signals during the output mode of operation in response to the first control signals. The output buffer circuits are disabled from transmitting signals during the input mode of operation in response to the second control signals.

Embodiments are provided herein for a packaged semiconductor device that includes a semiconductor die; a redistribution layer (RDL) structure on an active side of the semiconductor die, the RDL structure including a plurality of contact pads on an outer surface of the RDL structure; a plurality of external connections attached to the plurality of contact pads; and an isolation structure on the outer surface of the RDL structure around one or more contact pads of the plurality of contact pads, wherein a height of the isolation structure is at least two thirds of a height of the external connections.

Embodiments are provided herein for a packaged semiconductor device that includes a semiconductor die; a redistribution layer (RDL) structure on an active side of the semiconductor die, the RDL structure including a plurality of contact pads on an outer surface of the RDL structure; a plurality of external connections attached to the plurality of contact pads; and an isolation structure on the outer surface of the RDL structure around one or more contact pads of the plurality of contact pads, wherein a height of the isolation structure is at least two thirds of a height of the external connections.

Disclosed are a drive integrated circuit (IC) capable of being applied to all of a chip on film (COF) type and a chip on glass (COG) type and a display device including the drive IC. The drive IC includes an input pad part including a plurality of input bumps and an output pad part including a plurality of first diode parts, a plurality of second diode parts, and a plurality of output bumps. At least two of the plurality of output bumps overlap the plurality of first diode parts and the plurality of second diode parts, and a first output bump of the at least two output bumps is connected to at least one of the plurality of first diode parts and at least one of the plurality of second diode parts.

The present disclosure provides a driving chip, a display substrate, a display device and a method for manufacturing a display device. The driving chip according to the present disclosure includes a substrate; and a plurality of connecting bumps and a plurality of supporting bumps disposed on the substrate. The plurality of connecting bumps include at least one set of connecting bumps arranged along a first direction, and the plurality of supporting bumps include the supporting bump that is located between the adjacent connecting bumps arranged along the first direction.

A semiconductor structure is provided. The semiconductor structure includes a semiconductor substrate and a first conductive bump. The semiconductor substrate has an integrated circuit and an interconnection metal layer, and a tilt surface is formed on an edge of the semiconductor substrate. The first conductive bump is electrically connected to the integrated circuit via the interconnection metal layer, and is disposed on the tilt surface, wherein a profile of the first conductive bump extends beyond a side surface of the edge of the semiconductor layer.

A semiconductor device structure is provided. The semiconductor device structure includes a substrate, an electrical connection structure extending upwardly from an upper surface of the substrate by a first height, and a contact pad electrically disposed on the upper surface of the substrate. The contact pad has a solder-wettable surface with an area configured to support a solder ball having a second height at least twice the first height. The semiconductor device structure further includes a fuse element with a first end electrically coupled to the electrical connection structure and a second end electrically coupled to the contact pad.

A semiconductor device includes a semiconductor die having a first surface and a second surface opposite to the first surface, a plurality of first real conductive pillars in a first region on the first surface, and a plurality of supporters in a second region adjacent to the first region. An area density of the plurality of supporters in the second region is in a range of from about 50% to about 100% to an area density of the plurality of first real conductive pillars in the first region. A method for manufacturing a semiconductor package including the semiconductor device is also disclosed in the present disclosure.