A semiconductor package includes a first semiconductor chip comprising a semiconductor substrate and a redistribution pattern on a top surface of the semiconductor substrate, the redistribution pattern having a hole exposing an inner sidewall of the redistribution pattern, a second semiconductor chip on a top surface of the first semiconductor chip, and a bump structure disposed between the first semiconductor chip and the second semiconductor chip. The bump structure is disposed in the hole and is in contact with the inner sidewall of the redistribution pattern.

The semiconductor memory device includes: a first substrate including a peripheral circuit, first conductive contact patterns connected to the peripheral circuit, and a first upper insulating layer having grooves exposing the first conductive contact patterns; a second substrate including a memory cell array, a second upper insulating layer disposed on the memory cell array, the second upper insulating layer formed between the memory cell array and the first upper insulating layer, second conductive contact patterns protruding through the second upper insulating layer into an opening of the grooves; and conductive adhesive patterns filling the grooves to connect the second conductive contact patterns to the first conductive contact patterns.

A first side of a tapeless leadframe package is etched to form a ring shaped protrusion and a lead protrusion extending from a base layer. An integrated circuit die is mounted to tapeless leadframe package in flip chip orientation with a front side facing the first side. An electrical and mechanical attachment is made between a bonding pad of the integrated circuit die and the lead protrusion. A mechanical attachment is made between the front side of the integrated circuit die and the ring shaped protrusion. The integrated circuit die and the protrusions from the tapeless leadframe package are encapsulated within an encapsulating block. The second side of the tapeless leadframe package is then etched to remove portions of the base layer and define a lead for a leadframe from the lead protrusion and further define a die support for the leadframe from the ring shaped protrusion.

The present application provides a semiconductor package with air gaps for reducing capacitive coupling between conductive features and a method for manufacturing the semiconductor package. The semiconductor package includes a first semiconductor structure and a second semiconductor structure bonded with the first semiconductor structure. The first semiconductor structure has a first bonding surface. The second semiconductor structure has a second bonding surface partially in contact with the first bonding surface. A portion of the first bonding surface is separated from a portion of the second bonding surface, a space between the portions of the first and second bonding surfaces is sealed and forms an air gap in the semiconductor package.

A substrate that includes a core layer, at least one first dielectric layer located over a first surface of the core layer, at least one second dielectric layer located over a second surface of the core layer, a plurality of first interconnects located over a surface of the at least one first dielectric layer, a plurality of second interconnects located over the surface of the at least one first dielectric layer, a plurality of third interconnects located over the surface of the at least one first dielectric layer, and a solder resist layer located over the surface of the at least one second dielectric layer. The plurality of third interconnects and the plurality of second interconnects are co-planar to the plurality of first interconnects. The solder resist layer includes a first portion, a second portion, and a third portion.

Techniques are provided for an inductor at a first level interface between a first die and a second die. In an example, the inductor can include a winding and a core disposed inside the winding. The winding can include first conductive traces of a first die, second conductive traces of a second die, and a plurality of connectors configured to connect the first die with the second die. Each connector of the plurality of connecters can be located between a trace of the first conductive traces and a corresponding trace of the second conductive traces.

A display device includes a display substrate, a signal pad part, an insulating layer, a connection pad part, and an electronic component. The signal pad part includes first and second signal pad parts, which face each other in one direction. The insulating layer covers the signal pad part. The connection pad part is disposed on the insulating layer and includes a first connection pad part overlapping the first signal pad part and a second connection pad part. The second connection pad part is electrically connected to the first connection pad part and is in electrical contact with the second signal pad part through a contact hole defined in the insulating layer. The electronic component includes a bump that is in electrical contact with the first connection pad part. The first signal pad part includes a plurality of signal pad portions spaced apart from each other.

Disclosed are devices, fabrication methods and design rules for flip-chip devices. Aspects include an apparatus including a flip-chip device. The flip-chip device including a die having a plurality of under bump metallizations (UBMs). A package substrate having a plurality of bond pads is also included. A plurality of solder joints coupling the die to the package substrate. The plurality of solder joints are formed from a plurality of solder bumps plated on the plurality of UBMs, where the plurality of solder bumps are directly connected to the plurality of bond pads.

A substrate that includes a core layer, at least one first dielectric layer located over a first surface of the core layer, at least one second dielectric layer located over a second surface of the core layer, a plurality of first interconnects located over a surface of the at least one first dielectric layer, a plurality of second interconnects located over the surface of the at least one first dielectric layer, a plurality of third interconnects located over the surface of the at least one first dielectric layer, and a solder resist layer located over the surface of the at least one second dielectric layer. The plurality of third interconnects and the plurality of second interconnects are co-planar to the plurality of first interconnects. The solder resist layer includes a first portion, a second portion, and a third portion.

Provided are a hybrid bonding structure, a solder paste composition, a semiconductor device, and a method of manufacturing the semiconductor device. The hybrid bonding structure includes a solder ball and a solder paste bonded to the solder ball. The solder paste includes a transient liquid phase. The transient liquid phase includes a core and a shell on a surface of the core. A melting point of the shell may be lower than a melting point of the core. The core and the shell are configured to form an intermetallic compound in response to the transient liquid phase at least partially being at a temperature that is within a temperature range of about 20° C. to about 190° C.