Embodiments may relate to a microelectronic package that includes a substrate with a cavity therein. A component may be positioned within the substrate, and exposed by the cavity. A solder bump may be positioned within the cavity and coupled with the component, and a bridge die may be coupled with the solder bump. Other embodiments may be described or claimed.

Embodiments relate to the design of a device capable of maintaining the alignment an interconnect by resisting lateral forces acting on surfaces of the interconnect. The device comprises a first body comprising a first surface with a nanoporous metal structure protruding from the first surface. The device further comprises a second body comprising a second surface with a locking structure to resist a lateral force between the first body and the second body during or after assembly of the first body and the second body.

Disclosed are devices, fabrication methods and design rules for flip-chip devices. Aspects include an apparatus including a flip-chip device. The flip-chip device including a die having a plurality of under bump metallizations (UBMs). A package substrate having a plurality of bond pads is also included. A plurality of solder joints coupling the die to the package substrate. The plurality of solder joints are formed from a plurality of solder bumps plated on the plurality of UBMs, where the plurality of solder bumps are directly connected to the plurality of bond pads.

A non-conductive film having heating function and an electronic device using the same are provided. The electronic device includes a circuit substrate, an interposer board disposed on the circuit substrate, at least one electronic chip carried by the interposer board, a first non-conductive film disposed between the interposer board and the circuit substrate, and a second non-conductive film disposed between the at least one electronic chip and the interposer board, the at least one electronic chip being electrically connected to the circuit substrate through the interposer board. One of the first non-conductive film and the second non-conductive film is a type of non-conductive film having heating function, and the non-conductive film with heating function includes a non-conductive body and a plurality of micro heaters. The shape of the non-conductive body is changeable by heating, and the micro heaters are disposed on or in the non-conductive body.

A preparation method of a backplane includes: forming an insulating structure layer having a groove on a base substrate by a mask exposure process, the groove being used for accommodating a metal trace; and repeating a metal sub-layer forming step including an ashing process and a wet etching process multiple times to form the metal trace positioned in the groove.

There is a need to improve reliability of the semiconductor device. A semiconductor device includes a printed circuit board and a semiconductor chip mounted over the printed circuit board. The semiconductor chip includes a pad, an insulation film including an opening to expose part of the pad, and a pillar electrode formed over the pad exposed from the opening. The printed circuit board includes a terminal and a resist layer including an opening to expose part of the terminal. The pillar electrode of the semiconductor chip and the terminal of the printed circuit board are coupled via a solder layer. Thickness h.sub.1 of the pillar electrode is measured from the upper surface of the insulation film. Thickness h.sub.2 of the solder layer is measured from the upper surface of the resist layer. Thickness h.sub.1 is greater than or equal to a half of thickness h.sub.2 and is smaller than or equal to thickness h.sub.2.

A semiconductor device package includes a first substrate having a first surface, a first electrical contact disposed on the first surface of the first substrate, a second substrate having a second surface facing the first surface of the first substrate, and a second electrical contact disposed on the second surface of the second substrate. The first electrical contact has a base portion and a protrusion portion. The second electrical contact covers at least a portion of the protrusion portion of the first electrical contact. The second electrical contact has a first surface facing the first substrate and a second surface facing the second substrate. A slope of a first interface between the second electrical contact and the protrusion portion of the first electrical contact adjacent to the first surface of the second electrical contact is substantially the same as a slope of a second interface between the second electrical contact and the protrusion portion of the first electrical contact adjacent to the second surface of the second electrical contact. A method of manufacturing a semiconductor device package is also disclosed.

A semiconductor device package includes a first substrate having a first surface, a first electrical contact disposed on the first surface of the first substrate, a second substrate having a second surface facing the first surface of the first substrate, and a second electrical contact disposed on the second surface of the second substrate. The first electrical contact has a base portion and a protrusion portion. The second electrical contact covers at least a portion of the protrusion portion of the first electrical contact. The second electrical contact has a first surface facing the first substrate and a second surface facing the second substrate. A slope of a first interface between the second electrical contact and the protrusion portion of the first electrical contact adjacent to the first surface of the second electrical contact is substantially the same as a slope of a second interface between the second electrical contact and the protrusion portion of the first electrical contact adjacent to the second surface of the second electrical contact. A method of manufacturing a semiconductor device package is also disclosed.

A process for manufacturing a semiconductor flip chip package and a corresponding flip chip package. The process comprises associating conducting bump pads to a face corresponding to an active side of one or more electronic dice, flipping the one or more electronic dice so that said face corresponding to an active side of one or more electronic dies is facing a leadframe carrying contacting pads in correspondence of said conducting bump pads, bonding said contacting pads to said conducting bump pads and encasing said one or more electronic dice in a casing by a molding operation. The process includes providing a leadframe having contacting pads presenting a recessed surface in correspondence of the position of said conducting bump pads.

A semiconductor device includes an electronic component, a package, a substrate and a plurality of first conductors and second conductors. The package is over the electronic component. T substrate is between the electronic component and the package. The substrate includes a first portion covered by the package, and a second portion protruding out of an edge of the package and uncovered by the package. The first conductors and second conductors are between and electrically connected to the electronic component and the substrate. A width of a second conductor of the plurality of second conductors is larger than a width of a first conductor of the plurality of first conductors, the first conductors are disposed between the second portion of the substrate and the electronic component, and the second conductors are disposed between the first portion of the substrate and the electronic component.