Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a package substrate having a first surface and an opposing second surface; a first die having a first surface and an opposing second surface embedded in a first dielectric layer, where the first surface of the first die is coupled to the second surface of the package substrate by first interconnects; a second die having a first surface and an opposing second surface embedded in a second dielectric layer, where the first surface of the second die is coupled to the second surface of the first die by second interconnects; and a third die having a first surface and an opposing second surface embedded in a third dielectric layer, where the first surface of the third die is coupled to the second surface of the second die by third interconnects.

A semiconductor device package includes a first electronic component, a plurality of first conductive traces, a second electronic component, a plurality of second conductive traces and a plurality of first conductive structures. The first electronic component has a first active surface. The first conductive traces are disposed on and electrically connected to the first active surface. The second electronic component is stacked on the first electronic component. The second electronic component has an inactive surface facing the first active surface, a second active surface opposite the inactive surface, and at least one lateral surface connecting the second active surface and the inactive surface. The second conductive traces are electrically connected to the second active surface, and extending from the second active surface to the lateral surface. The first conductive structures are electrically connecting the second conductive traces to the first conductive traces, respectively.

A system may include a host processor, an interposer having memory elements, a coprocessor mounted on the interposer for accelerating tasks received from the host processor, and an auxiliary chip. The coprocessor, interposer, and auxiliary chip may be part of an integrated circuit package. The memory elements on the interposer may convey configuration bit streams to one or more logic sectors in programmable circuitry of the coprocessor. The interposer may be connected to a package substrate of the integrated circuit package using through-silicon vias, such that an active surface of the interposer faces an active surface of the coprocessor. Each logic sector may include one or more data registers that are loaded with configuration data from the memory elements. In some instances, the auxiliary chip may include a secondary memory for storing additional configuration bit streams for configuring the logic sectors of the coprocessor.

An embedded multi-die interconnect bridge (EMIB) die is configured with power delivery to the center of the EMIB die and the power is distributed to two dice that are interconnected across the EMIB die.

A die and a substrate are provided. The die comprises at least one integrated circuit chip, and the substrate comprises first and second subsets of conductive pillars extending at least partially therethrough. Each of the first subset of conductive pillars comprises a protrusion bump pad protruding from a surface of the substrate, and the second subset of conductive pillars each partially form a trace recessed within the surface of the substrate. The die is coupled to the substrate via a plurality of conductive bumps each extending between one of the protrusion bump pads and the die.

A semiconductor device includes a semiconductor layer having a first surface, an insulating layer formed at the first surface of the semiconductor layer, a Cu conductive layer formed on the insulating layer, the Cu conductive layer made of a metal mainly containing Cu, a second insulating layer formed on the insulating layer, the second insulating layer covering the Cu conductive layer, a Cu pillar extending in a thickness direction in the second insulating layer, the Cu pillar made of a metal mainly containing Cu and electrically connected to the Cu conductive layer, and an intermediate layer formed between the Cu conductive layer and the Cu pillar, the intermediate layer made of a material having a linear expansion coefficient smaller than a linear expansion coefficient of the Cu conductive layer and smaller than a linear expansion coefficient of the Cu pillar.

A system may include a host processor, an interposer having memory elements, a coprocessor mounted on the interposer for accelerating tasks received from the host processor, and an auxiliary chip. The coprocessor, interposer, and auxiliary chip may be part of an integrated circuit package. The memory elements on the interposer may convey configuration bit streams to one or more logic sectors in programmable circuitry of the coprocessor. The interposer may be connected to a package substrate of the integrated circuit package using through-silicon vias, such that an active surface of the interposer faces an active surface of the coprocessor. Each logic sector may include one or more data registers that are loaded with configuration data from the memory elements. In some instances, the auxiliary chip may include a secondary memory for storing additional configuration bit streams for configuring the logic sectors of the coprocessor.

An electronic apparatus and a circuit board thereof are provided. The electronic apparatus includes a control device that can operate with the circuit board, and includes a ball pad array. The ball pad array includes a plurality of power ball pads and a plurality of ground ball pads, which are arranged in the same pad arrangement region. At least a portion of the power ball pads and at least a portion of the ground ball pads are arranged in an alternate manner. The circuit board includes a solder pad array corresponding to the ball pad array of the control device so as to be disposed with the control device.

Embodiments that allow both high density and low density interconnection between microelectronic die and motherboard via Direct Chip Attach (DCA) are described. In some embodiments, microelectronic die have a high density interconnect with a small bump pitch located along one edge and a lower density connection region with a larger bump pitch located in other regions of the die. The high density interconnect regions between die are interconnected using an interconnecting bridge made out of a material that can support high density interconnect manufactured into it, such as silicon. The lower density connection regions are used to attach interconnected die directly to a board using DCA. The high density interconnect can utilize current Controlled Collapsed Chip Connection (C4) spacing when interconnecting die with an interconnecting bridge, while allowing much larger spacing on circuit boards.

An embedded multi-die interconnect bridge (EMIB) die is configured with power delivery to the center of the EMIB die and the power is distributed to two dice that are interconnected across the EMIB die.