A semiconductor device includes a dielectric interposer, a first interconnection layer, an electronic component, a plurality of electrical conductors and a plurality of conductive structures. The dielectric interposer has a first surface and a second surface opposite to the first surface. The first interconnection layer is over the first surface of the dielectric interposer. The electronic component is over and electrically connected to the first interconnection layer. The electrical conductors are over the second surface of the dielectric interposer. The conductive structures are through the dielectric interposer, wherein the conductive structures are electrically connected to the first interconnection layer and the electrical conductors.

Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a package substrate having a first surface and an opposing second surface, and a die secured to the package substrate, wherein the die has a first surface and an opposing second surface, the die has first conductive contacts at the first surface and second conductive contacts at the second surface, and the first conductive contacts are coupled to conductive pathways in the package substrate by first non-solder interconnects.

A semiconductor package includes an interposer chip having a frontside, a backside, and a corner area on the backside defined by a first corner edge and a second corner edge of the interposer chip. A die is bonded to the frontside of the interposer chip. At least one dam structure is formed on the corner area of the backside of the interposer chip. The dam structure includes an edge aligned to at least one the first corner edge and the second corner edge of the interposer chip.

Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a package substrate having a first surface and an opposing second surface, and a die secured to the package substrate, wherein the die has a first surface and an opposing second surface, the die has first conductive contacts at the first surface and second conductive contacts at the second surface, and the first conductive contacts are coupled to conductive pathways in the package substrate by first non-solder interconnects.

Proximity coupling interconnect packaging systems and methods. A semiconductor package assembly comprises a substrate, a first semiconductor die disposed adjacent the substrate, and a second semiconductor die stacked over the first semiconductor die. There is at least one proximity coupling interconnect between the first semiconductor die and the second semiconductor die, the proximity coupling interconnect comprising a first conductive pad on the first coupling face on the first semiconductor die and a second conductive pad on a second coupling face of the second semiconductor die, the second conductive pad spaced apart from the first conductive pad by a gap distance and aligned with the first conductive pad. An electrical connector is positioned laterally apart from the proximity coupling interconnect and extends between the second semiconductor die and the substrate, the position of the electrical connector defining the alignment of the first conductive pad and the second conductive pad.

Proximity coupling interconnect packaging systems and methods. A semiconductor package assembly comprises a substrate, a first semiconductor die disposed adjacent the substrate, and a second semiconductor die stacked over the first semiconductor die. There is at least one proximity coupling interconnect between the first semiconductor die and the second semiconductor die, the proximity coupling interconnect comprising a first conductive pad on the first coupling face on the first semiconductor die and a second conductive pad on a second coupling face of the second semiconductor die, the second conductive pad spaced apart from the first conductive pad by a gap distance and aligned with the first conductive pad. An electrical connector is positioned laterally apart from the proximity coupling interconnect and extends between the second semiconductor die and the substrate, the position of the electrical connector defining the alignment of the first conductive pad and the second conductive pad.

A semiconductor device includes an electronic component, a package, a substrate and a plurality of first conductors and second conductors. The package is over the electronic component. T substrate is between the electronic component and the package. The substrate includes a first portion covered by the package, and a second portion protruding out of an edge of the package and uncovered by the package. The first conductors and second conductors are between and electrically connected to the electronic component and the substrate. A width of a second conductor of the plurality of second conductors is larger than a width of a first conductor of the plurality of first conductors, the first conductors are disposed between the second portion of the substrate and the electronic component, and the second conductors are disposed between the first portion of the substrate and the electronic component.

A semiconductor device includes a substrate, a package, first conductors and second conductors. The substrate includes a first surface and a second surface opposite to the first surface. The package is disposed over the substrate. The first conductors are disposed over the substrate. The second conductors are disposed over the substrate, wherein the first conductors and the second conductors are substantially at a same tier, and a width of the second conductor is larger than a width of the first conductor.

Underfill material flow control for reduced die-to-die spacing in semiconductor packages and the resulting semiconductor packages are described. In an example, a semiconductor apparatus includes first and second semiconductor dies, each having a surface with an integrated circuit thereon coupled to contact pads of an uppermost metallization layer of a common semiconductor package substrate by a plurality of conductive contacts, the first and second semiconductor dies separated by a spacing. A barrier structure is disposed between the first semiconductor die and the common semiconductor package substrate and at least partially underneath the first semiconductor die. An underfill material layer is in contact with the second semiconductor die and with the barrier structure, but not in contact with the first semiconductor die.

An electronic device includes: a first circuit board; a second circuit board located above a first region of the first circuit board; a first semiconductor element located above a second region of the first circuit board, which is different from the first region, and above a third region of the second circuit board; a first connection interposed between the first semiconductor element and the second region so as to electrically interconnect the first semiconductor element and the first circuit board; and a second connection interposed between the first semiconductor element and the third region so as to electrically interconnect the first semiconductor element and the second circuit board.