Patent classifications
H01L2224/24011
ELECTRONIC-COMPONENT-EMBEDDED SUBSTRATE AND METHOD OF MAKING THE SAME
An electronic-component-embedded substrate includes a base having flexibility and cavities formed therethrough, electronic components disposed in the cavities, respectively, and interconnects disposed on the base and connected to the electronic components, wherein the interconnects include a metal foil having openings that abut the electronic components, and include a plating layer disposed on the metal foil and connected to the electronic components through the openings.
DIE AND PACKAGE STRUCTURE
A die includes a substrate, a conductive pad, a connector and a protection layer. The conductive pad is disposed over the substrate. The connector is disposed on the conductive pad. The connector includes a seed layer and a conductive post. The protection layer laterally covers the connector. Topmost surfaces of the seed layer and the conductive post and a top surface of the protection layer are level with each other.
Process including a re-etching process for forming a semiconductor structure
A method includes encapsulating a device in an encapsulating material, planarizing the encapsulating material and the device, and forming a conductive feature over the encapsulating material and the device. The formation of the conductive feature includes depositing a first conductive material to from a first seed layer, depositing a second conductive material different from the first conductive material over the first seed layer to form a second seed layer, plating a metal region over the second seed layer, performing a first etching on the second seed layer, performing a second etching on the first seed layer, and after the first seed layer is etched, performing a third etching on the second seed layer and the metal region.
Manufacturing method of semiconductor structure
A manufacturing method of a semiconductor structure includes covering first and second semiconductor dies with an insulating encapsulant. The first semiconductor die includes an active surface accessibly exposed by the insulating encapsulant and a first conductive terminal distributed at the active surface. The second semiconductor die includes an active surface accessibly exposed by the insulating encapsulant and a second conductive terminal distributed at the active surface. A redistribution circuit layer is formed on the insulating encapsulant and the active surfaces of the first and second semiconductor dies. A conductive trace of the redistribution circuit layer is electrically connected from the first semiconductor die and meanderingly extends to the second semiconductor die, and a ratio of a total length of the conductive trace to a top width of the insulating encapsulant between the first and second semiconductor dies ranges from about 3 to about 10.
Electronic-component-embedded substrate and method of making the same
An electronic-component-embedded substrate includes a base having flexibility and cavities formed therethrough, electronic components disposed in the cavities, respectively, and interconnects disposed on the base and connected to the electronic components, wherein the interconnects include a metal foil having openings that abut the electronic components, and include a plating layer disposed on the metal foil and connected to the electronic components through the openings.
Secure integrated-circuit systems
A method of making a secure integrated-circuit system comprises providing a first integrated circuit in a first die having a first die size and providing a second integrated circuit in a second die. The second die size is smaller than the first die size. The second die is transfer printed onto the first die and connected to the first integrated circuit, forming a compound die. The compound die is packaged. The second integrated circuit is operable to monitor the operation of the first integrated circuit and provides a monitor signal responsive to the operation of the first integrated circuit. The first integrated circuit can be constructed in an insecure facility and the second integrated circuit can be constructed in a secure facility.
SECURE INTEGRATED-CIRCUIT SYSTEMS
A method of making a secure integrated-circuit system comprises providing a first integrated circuit in a first die having a first die size and providing a second integrated circuit in a second die. The second die size is smaller than the first die size. The second die is transfer printed onto the first die and connected to the first integrated circuit, forming a compound die. The compound die is packaged. The second integrated circuit is operable to monitor the operation of the first integrated circuit and provides a monitor signal responsive to the operation of the first integrated circuit. The first integrated circuit can be constructed in an insecure facility and the second integrated circuit can be constructed in a secure facility.
SEMICONDUCTOR STRUCTURE AND METHOD MANUFACTURING THE SAME
A semiconductor structure includes system-on-integrated chips, a first redistribution circuit structure and first conductive terminals. The system-on-integrated chips each include a die stack having two or more than two tiers, and each tier includes at least one semiconductor die. The first redistribution circuit structure is located on and electrically connected to the system-on-integrated chips. The first conductive terminals are connected on the first redistribution circuit structure, where the first redistribution circuit structure is located between the system-on-integrated chips and the first conductive terminals.
INTEGRATED CIRCUIT CHIP PACKAGE THAT DOES NOT UTILIZE A LEADFRAME
An integrated circuit die includes a semiconductor substrate, an interconnect layer including bonding pads, and a passivation layer covering the interconnect layer and including openings at the bonding pads. A conductive redistribution layer including conductive lines and conductive vias is supported by the passivation layer. An insulating layer covers the conductive redistribution layer and the passivation layer. Channels formed in an upper surface of the insulating layer delimit pedestal regions in the insulating layer. A through via extends from an upper surface of each pedestal region through the pedestal region and the insulating layer to reach and make contact with a portion of the conductive redistribution layer. A metal pad is formed at the upper surface of each pedestal region in contact with its associated through via. The metal pads for leads of a quad-flat no-lead (QFN) type package.
ELECTRONICS ASSEMBLIES WITH POWER ELECTRONIC DEVICES AND THREE-DIMENSIONALLY PRINTED CIRCUIT BOARDS HAVING REDUCED JOULE HEATING
In one embodiment, an electronics assembly includes a cold plate assembly having a first surface, at least one power electronic device disposed within a recess on the first surface of the cold plate assembly, and a printed circuit board disposed on a surface of the at least one power electronic device. The printed circuit board includes a first insulation layer, a second insulation layer, an electrically conductive power layer between the first insulation layer and the second insulation layer, a first set of thermal vias extending from the electrically conductive power layer and toward the first surface of the cold plate assembly, and a second set of thermal vias extending from the first surface of the cold plate assembly toward the electrically conductive power layer. The first set of thermal vias is electrically isolated from the second set of thermal vias.