A semiconductor laser component including a semiconductor chip arranged to emit laser radiation, a cladding that is electrically insulating and covers the semiconductor chip in places, and a bonding layer that electrically conductively connects the semiconductor chip to a first connection point, wherein the semiconductor chip includes a cover surface, a bottom surface, a first front surface, a second front surface, a first side surface and a second side surface, the first front surface is arranged to decouple the laser beam, the cladding covers the semiconductor chip at least in places on the cover surface, the second front surface, the first side surface and the second side surface, and the bonding layer on the cladding extends from the cover surface to the first connection point.

An integrated circuit chip includes a front face having an electrical connection pad. An overmolded encapsulation block encapsulates the integrated circuit chip and includes a front layer at least partially covering a front face of the integrated circuit chip. A through-hole the encapsulation block is located above the electrical connection pad of the integrated circuit chip. A wall of the through-hole is covered with an inner metal layer that is joined to the front pad of the integrated circuit chip. A front metal layer covers a local zone of the front face of the front layer, with the front metal layer being joined to the inner metal layer to form an electrical connection. The inner metal layer and the front metal layer are attached or anchored to activated additive particles that are included in the material of the encapsulation block.

The present disclosure provides a chip packaging method and a chip structure. The chip packaging method comprises: providing a wafer, and forming a protective layer on a wafer active surface of the wafer; cutting and separating the wafer to form a die; providing a metal structure, the metal structure including at least one metal unit; adhering the die and the metal structure onto a carrier; and forming a molding layer. The chip structure comprises: at least one die; a protective layer; a metal unit, the metal unit including at least one metal feature; and a molding layer, encapsulating the at least one die and the metal unit, and the chip structure is connected with an external circuit through the at least one metal feature. By adopting a plurality of metal features of the metal unit, the present disclosure achieves improved packaging performance brought by different metal features; and the wafer active surface is provided with the protective layer in the present disclosure, so that a step of applying an insulating layer after the formation of the molding layer is omitted.

An electrical device with printed interconnects between packaged integrated circuit components and a substrate as well as a method for printing interconnects between packaged integrated circuit components and a substrate are disclosed. An electrical device with printed interconnects may include a dielectric layer forming a continuous surface between a substrate and a terminal face of an integrated circuit component. The electrical device may further include interconnects formed from a layer of material printed across the continuous surface formed by the dielectric layer to connect electrical terminals on the substrate to electrical terminals on the terminal face of the integrated circuit component.

A method of manufacturing an electronic-component-embedded substrate includes forming a power-supplying metal layer on a base, forming through electrodes that are to be connected to the power-supplying metal layer on the power-supplying metal layer by an electrolytic plating method, forming a first wiring line by patterning the power-supplying metal layer, forming an interlayer insulating layer such that the interlayer insulating layer covers a portion of the first wiring line, and forming a second wiring line on at least a portion of the first wiring line and a portion of the interlayer insulating layer such that the second wiring line crosses, on the interlayer insulating layer, a portion of the first wiring line.

A semiconductor structure including a plurality of semiconductor dies, an insulating encapsulant, and a redistribution structure disposed on the semiconductor dies and the insulating encapsulant is provided. The insulating encapsulant is interposed between adjacent two of the semiconductor dies, and the insulating encapsulant includes a first portion wider than a second portion connected to the first portion. The redistribution structure includes a dielectric layer overlying the insulating encapsulant, and a conductive trace overlying the dielectric layer and opposite to the insulating encapsulant. The conductive trace includes at least one turn and is connected to a conductive terminal of one of the adjacent two of the semiconductor dies, and the conductive trace extends across the dielectric layer to reach another conductive terminal of another one of the adjacent two of the semiconductor dies.

Provided is a semiconductor device manufacturing method through which semiconductor elements are multilayered through the lamination of wafers in which the semiconductor elements are fabricated, the method thereof being suited for efficiently manufacturing semiconductor devices while realizing a large number of wafer lamination. With the method of the present invention, at least two wafer laminates are formed, each wafer laminate having a laminated structure, the structure including a plurality of wafers including an element forming surface and a back surface, with the element forming surface and the back surface facing between adjacent wafers; a through electrode is formed in each wafer laminate with the through electrode extending through an inside of the wafer laminate, from an element forming surface side of a first wafer located at one end of the wafer laminate in a lamination direction, to a position exceeding an element forming surface of a second wafer located at another end; the through electrode is exposed at a back surface side of the second wafer by grinding the back surface side thereof; and two wafer laminates that have been subjected to this exposing step are laminated and bonded while electrically connecting the through electrodes between the wafer laminates.

Integrated fan-out packages and methods of forming the same are disclosed. An integrated fan-out package includes two dies, an encapsulant, a first metal line and a plurality of dummy vias. The encapsulant is disposed between the two dies. The first metal line is disposed over the two dies and the encapsulant, and electrically connected to the two dies. The plurality of dummy vias is disposed over the encapsulant and aside the first metal line.

Semiconductor device packages may include a first semiconductor device over a substrate and a second semiconductor device over the first semiconductor device. An active surface of the second semiconductor device may face away from the substrate. Electrical interconnections may extend from bond pads of the second semiconductor device, along surfaces of the second semiconductor device, first semiconductor device, and substrate to pads of routing members of the substrate. The electrical interconnections may include conductors in contact with the bond pads and the routing members and a dielectric material interposed between the conductors and the first semiconductor device, the second semiconductor device and the substrate between the bond pads and the pad of the routing members. An encapsulant distinct from the dielectric material may cover the electrical interconnections, the first semiconductor device, the second semiconductor device, and an upper surface of the substrate. Methods of fabrication are also disclosed.

A display device includes a first electrode disposed on a substrate, a second electrode disposed on the substrate and spaced apart from the first electrode, at least one light-emitting element extending in a direction, disposed between the first electrode and the second electrode, and electrically connected to the first electrode and the second electrode, and an insulating pattern layer disposed on the first electrode and the second electrode, the insulating pattern layer including a fixer disposed on at least part of the at least one light-emitting element, and a barrier surrounding the at least one light-emitting element.