Integrated fan-out packages and methods of forming the same are disclosed. An integrated fan-out package includes two dies, an encapsulant, a first metal line and a plurality of dummy vias. The encapsulant is disposed between the two dies. The first metal line is disposed over the two dies and the encapsulant, and electrically connected to the two dies. The plurality of dummy vias is disposed over the encapsulant and aside the first metal line.

The present disclosure provides a method for packaging a camera assembly. The method includes: providing a photosensitive chip; mounting an optical filter on the photosensitive chip; temporarily bonding the photosensitive chip and functional components on a carrier substrate, where the photosensitive chip has soldering pads facing away from the carrier substrate and the functional components have soldering pads facing toward the carrier substrate; forming an encapsulation layer covering the carrier substrate, the photosensitive chip, and the functional components, and exposing the optical filter; after the encapsulation layer is formed, removing the carrier substrate; and after the carrier substrate is removed, forming a redistribution layer structure on a side of the encapsulation layer facing away from the optical filter to electrically connect the soldering pads of the photosensitive chip with the soldering pads of the functional components.

A package structure includes a first through via structure formed in a substrate and a semiconductor die formed below the first through via structure. The package structure further includes a conductive structure formed in a passivation layer over the substrate. The conductive structure includes a first via portion and a second via portion, the first via portion is directly over the first through via structure, and there is no conductive material directly below and in direct contact with the second via portion.

An electronic assembly comprising a carrier wafer having a top wafer surface and a bottom wafer surface; an electronic integrated circuit being formed in the carrier wafer and comprising an integrated circuit contact pad on the top wafer surface; said carrier wafer comprising a through-wafer cavity having walls that join said top wafer surface to said bottom wafer surface; a component chip having a component chip top surface, a component chip bottom surface and component chip side surfaces, the component chip being held in said through-wafer cavity by direct contact of at least a side surface of said component chip with an attachment metal that fills at least a portion of said through-wafer cavity; said component chip comprising at least one component contact pad on said component chip bottom surface; and a conductor connecting said integrated circuit contact pad and said component contact pad.

Implementations of a semiconductor package may include two or more die, each of the two more die coupled to a metal layer at a drain of each of the two more die, the two or more die and each metal layer arranged in two parallel planes; a first interconnect layer coupled at a source of each of the two more die; a second interconnect layer coupled to a gate of each of the two or more die and to a gate package contact through one or more vias; and an encapsulant that encapsulates the two or more die and at least a portion of the first interconnect layer, each metal layer, and the second interconnect layer.

A packaged semiconductor includes an electrically insulating encapsulant body having an upper surface, a first semiconductor die encapsulated within the encapsulant body, the first semiconductor die having a main surface with a first conductive pad that faces the upper surface of the encapsulant body, a second semiconductor die encapsulated within the encapsulant body and disposed laterally side by side with the first semiconductor die, the second semiconductor die having a main surface with a second conductive pad that faces the upper surface of the encapsulant body, and a first conductive track that is formed in the upper surface of the encapsulant body and electrically connects the first conductive pad to the second conductive pad. The encapsulant body includes a laser activatable mold compound.

A package manufacturing having a semiconductor substrate, a bonding layer, at least one semiconductor device, a redistribution circuit structure and an insulating encapsulation. The bonding layer is disposed on the semiconductor substrate. The semiconductor device is disposed on and in contact with a portion of the bonding layer, wherein the bonding layer is located between the semiconductor substrate and the semiconductor device and adheres the semiconductor device onto the semiconductor substrate. The redistribution circuit structure is disposed on and electrically connected to the semiconductor device, wherein the semiconductor device is located between the redistribution circuit structure and the bonding layer. The insulating encapsulation wraps a sidewall of the semiconductor device, wherein a sidewall of the bonding layer is aligned with a sidewall of the insulating encapsulation and a sidewall of the redistribution circuit structure.

Provided are a package structure and a method of manufacturing the same. The method includes the following processes. A die is provided. An encapsulant is formed laterally aside the die. A first dielectric layer is formed on the encapsulant and the die. A first redistribution layer is formed to penetrate through the first dielectric layer to connect to the die, the first redistribution layer includes a first via embedded in the first dielectric layer and a first trace on the first dielectric layer and connected to the first via. The first via and the first trace of the first redistribution layer are formed separately.

An image pickup apparatus includes: an image pickup member having a first surface and a second surface, an external electrode being disposed on the second surface; a terminal where a core wire terminal is disposed on a first upper surface and a core wire electrode is disposed on a lower surface; a wiring layer including an insulation layer and a wiring, the wiring being in contact with the external electrode and the core wire electrode, a third surface being in contact with the second surface and the lower surface; a resin layer disposed on the third surface, an outer dimension of the resin layer being equal to an outer dimension of the wiring layer, the resin layer fixing the image pickup member and the terminal; and an electric cable including a core wire bonded to the core wire terminal.

A semiconductor package and a manufacturing method of a semiconductor package are provided. The semiconductor package includes a device die, a redistribution structure, a heat dissipation module and a molding compound. The redistribution structure is disposed at a front side of the device die. The heat dissipation module includes a thermal interfacial layer and a metal lid. The thermal interfacial layer is in direct contact with a back side of the device die, and located between the device die and the metal lid. The molding compound is disposed between the redistribution structure and the heat dissipation module, and has a body portion and an extended portion. The device die is located in the extended portion. The body portion laterally surrounds the extended portion. The extended portion is thicker than the body portion.