Temperature sensor packages and methods of fabrication are described. The temperature sensor packages in accordance with embodiments may be rigid or flexible. In some embodiments the temperature sensor packages are configured for touch sensing, and include an electrically conductive sensor pattern such as a thermocouple or resistance temperature detector (RTD) pattern. In some embodiments, the temperature sensor packages are configured for non-contact sensing an include an embedded transducer.

A semiconductor package may include a semiconductor chip including a chip pad, a redistribution structure including a redistribution insulation layer on the semiconductor chip and first redistribution patterns on a surface of the redistribution insulation layer, a passivation layer covering the first redistribution patterns, an UBM pattern on the passivation layer and extending into an opening of the passivation layer, a second redistribution pattern on the UBM pattern, conductive pillars on the second redistribution pattern, and a package connection terminal on the conductive pillars. The opening in the passivation layer may vertically overlap a portion of each of the first redistribution patterns. The second redistribution pattern may connect some of the first redistribution patterns to each other. Some of the conductive pillars may be connected to one another through the second redistribution pattern. The first redistribution patterns may be connected to the chip pad.

An embodiment is a structure including a first semiconductor device and a second semiconductor device, a first set of conductive connectors mechanically and electrically bonding the first semiconductor device and the second semiconductor device, a first underfill between the first and second semiconductor devices and surrounding the first set of conductive connectors, a first encapsulant on at least sidewalls of the first and second semiconductor devices and the first underfill, and a second set of conductive connectors electrically coupled to the first semiconductor device, the second set of conductive connectors being on an opposite side of the first semiconductor device as the first set of conductive connectors.

Stitched die packaging techniques and structures are described in which reconstituted chips are formed using wafer reconstitution and die-stitching techniques. In an embodiment, a chip includes a reconstituted chip-level back end of the line (BEOL) build-up structure to connect a die set embedded in an inorganic gap fill material.

A semiconductor package including: a first wiring structure; a semiconductor chip disposed on the first wiring structure; a second wiring structure disposed on the semiconductor chip and including a cavity; and a filling member between the first wiring structure and the second wiring structure and in the cavity, wherein an uppermost end of the filling member and an uppermost end of the second wiring structure are located at the same level.

A semiconductor device includes a gate structure, source/drain (S/D) elements, a first metallization contact and a second metallization contact. The S/D elements are respectively located at two different sides of the gate structure. The first metallization contact is located at and in contact with a first side of each of the S/D elements. The second metallization contact is located at and in contact with a second side of each of the S/D elements, where the semiconductor device is configured to receive a power signal through the second metallization contact. The first side is opposite to the second side along a stacking direction of the gate structure and the S/D elements, and the first side is closer to the gate structure than the second side is.

Temperature sensor packages and methods of fabrication are described. The temperature sensor packages in accordance with embodiments may be rigid or flexible. In some embodiments the temperature sensor packages are configured for touch sensing, and include an electrically conductive sensor pattern such as a thermocouple or resistance temperature detector (RTD) pattern. In some embodiments, the temperature sensor packages are configured for non-contact sensing an include an embedded transducer.

A semiconductor and a method of fabricating the semiconductor having multiple, interconnected die including: providing a semiconductor substrate having a plurality of disparate die formed within the semiconductor substrate, and a plurality of scribe lines formed between pairs of adjacent die of the plurality of disparate die; and fabricating, by a lithography system, a plurality of inter-die connections that extend between adjacent pair of die of the plurality of die.

An electronic package and a method for fabricating an electronic package are provided. An encapsulation layer encapsulates a first electronic component and a plurality of conductive pillars, and is defined with a reservation region and a removal region adjacent to the reservation region. A circuit structure is disposed on the encapsulation layer. The removal region and the circuit structure therewithin are removed for an optical communication element to protrude from a lateral surface of the encapsulation layer when the optical communication element is disposed on the circuit structure, so as to avoid a packaging material used in a subsequent process from being adhered to a protruding portion of the optical communication element.

An integrated circuit assembly that includes a semiconductor wafer having a first coefficient of thermal expansion; an electronic circuit substrate having a second coefficient of thermal expansion that is different than the first coefficient of thermal expansion; and an elastomeric connector arranged between the semiconductor wafer and the electronic circuit substrate and that forms an operable signal communication path between the semiconductor wafer and the electronic circuit substrate.