A method of and device for making a three dimensional electronic circuit. The method comprises coupling one or more magnet wires with a substrate along a surface contour of the substrate, immobilizing the one or more magnet wires on the substrate, and forming the electronic circuit by electrically coupling the one or more magnet wires with an integrated circuit chip.

Various embodiments of mechanisms for forming through package vias (TPVs) with openings surrounding end-portions of the TPVs and a package on package (PoP) device with bonding structures utilizing the TPVs are provided. The openings are formed by removing materials, such as by laser drill, surrounding the end-portions of the TPVs. The openings surrounding the end-portions of the TPVs of the die package enable solders of the bonding structures formed between another die package to remain in the openings without sliding and consequently increases yield and reliability of the bonding structures. Polymers may also be added to fill the openings surrounding the TPVs or even the space between the die packages to reduce cracking of the bonding structures under stress.

Present disclosure provides a semiconductor package, including a first substrate having a first active surface and a first trench recessed from the first active surface, a second substrate having a second trench facing the first trench, and a pathway cavity defined by the first trench and the second trench. The first trench comprises a first metal protrusion and a first insulating protrusion. A method for manufacturing the semiconductor package described herein is also disclosed.

A method includes forming a metal layer extending into openings of a dielectric layer to contact a first metal pad and a second metal pad, and bonding a bottom terminal of a component device to the metal layer. The metal layer has a first portion directly underlying and bonded to the component device. A raised via is formed on the metal layer, and the metal layer has a second portion directly underlying the raised via. The metal layer is etched to separate the first portion and the second portion of the metal layer from each other. The method further includes coating the raised via and the component device in a dielectric layer, revealing the raised via and a top terminal of the component device, and forming a redistribution line connecting the raised via to the top terminal.

A packaged semiconductor includes an electrically insulating encapsulant body having an upper surface, a first semiconductor die encapsulated within the encapsulant body, the first semiconductor die having a main surface with a first conductive pad that faces the upper surface of the encapsulant body, a second semiconductor die encapsulated within the encapsulant body and disposed laterally side by side with the first semiconductor die, the second semiconductor die having a main surface with a second conductive pad that faces the upper surface of the encapsulant body, and a first conductive track that is formed in the upper surface of the encapsulant body and electrically connects the first conductive pad to the second conductive pad. The encapsulant body includes a laser activatable mold compound.

The present disclosure provides a semiconductor device package. The semiconductor device package includes a first semiconductor device, a first conductive layer and a second conductive layer. The first semiconductor device has a first conductive pad. The first conductive layer is disposed in direct contact with the first conductive pad. The first conductive layer extends along a direction substantially parallel to a surface of the first conductive pad. The second conductive layer is disposed in direct contact with the first conductive pad and spaced apart from the first conductive layer.

A semiconductor package and a method for manufacturing a semiconductor package are provided. The semiconductor package includes a first semiconductor device, a second semiconductor device, and an alignment material. The first semiconductor device has a first bonding layer, and the first bonding layer includes a first bond pad contacting an organic dielectric material. The second semiconductor device has a second bonding layer, and the second bonding layer includes a second bond pad contacting the organic dielectric material. The alignment material is between the first bonding layer and the second bonding layer.

A method includes forming a metal layer extending into openings of a dielectric layer to contact a first metal pad and a second metal pad, and bonding a bottom terminal of a component device to the metal layer. The metal layer has a first portion directly underlying and bonded to the component device. A raised via is formed on the metal layer, and the metal layer has a second portion directly underlying the raised via. The metal layer is etched to separate the first portion and the second portion of the metal layer from each other. The method further includes coating the raised via and the component device in a dielectric layer, revealing the raised via and a top terminal of the component device, and forming a redistribution line connecting the raised via to the top terminal.

A manufacturing method for a semiconductor apparatus sequentially includes bonding a first chip and a second chip together using an adhesive. The first chip includes a first electrode and has a protrusion, and the second chip has a recess. In the bonding, the first chip and the second chip are bonded together in such a manner that the protrusion is positioned into the recess. Further, the method includes forming a through hole in the second chip to expose the first electrode, the first surface being opposite to a second surface having the recess, and forming the second electrode which is electrically connected to the first electrode, in the through hole.

A chip for hybrid bridged fanout chiplet connectivity, the chip comprising: a central chiplet; one or more first chiplets each coupled to the central chiplet using a plurality of fanout traces; and one or more second chiplets each coupled to the central chiplet using one or more interconnect dies (ICDs).