A method includes forming a metal layer extending into openings of a dielectric layer to contact a first metal pad and a second metal pad, and bonding a bottom terminal of a component device to the metal layer. The metal layer has a first portion directly underlying and bonded to the component device. A raised via is formed on the metal layer, and the metal layer has a second portion directly underlying the raised via. The metal layer is etched to separate the first portion and the second portion of the metal layer from each other. The method further includes coating the raised via and the component device in a dielectric layer, revealing the raised via and a top terminal of the component device, and forming a redistribution line connecting the raised via to the top terminal.

the present disclosure relates to an embedded packaging module comprising a first semiconductor device, a first packaging layer and a first wiring layer, the first semiconductor device having a first and a second face, at least two positioning bulges and at least one bonding pad being provided on the first face of the first semiconductor device; the first packaging layer being formed on both the first face and a surface adjacent to the first face, the positioning bulges being positioned in the first packaging layer, at least one first via hole being provided in the first packaging layer, the bottom of the first via hole being positioned in the bonding pad and contacting with the bonding pad; the first wiring layer being positioned on the side of the first packaging layer away from the first semiconductor device and being electrically connected with the bonding pad through the first via hole.

A manufacturing method for a semiconductor apparatus sequentially includes bonding a first chip and a second chip together using an adhesive. The first chip includes a first electrode and has a protrusion, and the second chip has a recess. In the bonding, the first chip and the second chip are bonded together in such a manner that the protrusion is positioned into the recess. Further, the method includes forming a through hole in the second chip to expose the first electrode, the first surface being opposite to a second surface having the recess, and forming the second electrode which is electrically connected to the first electrode, in the through hole.

A stack of electrical components has a first electrical component having a first surface, a second surface that is opposite to the first surface and a side surface that is located between the first surface and the second surface; a second electrical component having a third surface on which the first electrical component is mounted, the third surface facing the second surface and forming a corner portion between the third surface and the side surface; an adhesive layer that bonds the first electrical component to the second electrical component, wherein the adhesive layer has a first portion that is located between the second surface and the third surface and a curved second portion that fills the corner portion; and a conductive layer that extends on a side of the side surface, curves along the second portion and extends to the third surface.

A module includes: a resin insulating layer; a first electronic component mounted on a lower surface of the resin insulating layer and including first and second terminals on an upper surface of the first electronic component; a resin bonding layer bonding the lower surface of the resin insulating layer to the upper surface of the first electronic component; first and second wiring lines located on inner surfaces of at least one first through hole and at least one second through hole penetrating through the resin insulating layer and the resin bonding layer, respectively, located on an upper surface of the resin insulating layer, and connecting to the first and second terminals, respectively, wherein an opening penetrating through the resin insulating layer and the resin bonding layer is provided between the first and second terminals and between the first and second wiring lines, and no other metal layers are provided.

A method of manufacturing a semiconductor device is provided. The method includes forming a redistribution layer (RDL) over a semiconductor die, a portion of the RDL contacting a die pad of the semiconductor die. A non-conductive layer is formed over the RDL. An opening in the non-conductive layer is formed exposing a portion of the RDL. A plurality of plateau regions is formed in the non-conductive layer. A cavity region in the non-conductive layer separates each plateau region of the plurality of plateau regions. A metal layer is deposited over the non-conductive layer and exposed portion of the RDL and etched to expose the plurality of plateau regions through the metal layer. The cavity region remains substantially filled by a portion of the metal layer.

The invention relates to a method for integrating at least one interconnection for the manufacture of an integrated circuit, including a step of depositing at least one insulating body onto a substrate including a horizontal surface, said insulating body comprising a first wall extending from the horizontal surface of the substrate to a high point of said insulating body and a step of depositing a one-piece electrical structure which is made of an electrically conductive material and extends on the horizontal surface of the substrate and the first wall of the insulating body, the first wall being vertically angled by more than 10 m and having a rising slope extending from the horizontal surface of the substrate to the high point of said insulating body.

Implementations of a semiconductor package may include two or more die, each of the two more die coupled to a metal layer at a drain of each of the two more die, the two or more die and each metal layer arranged in two parallel planes; a first interconnect layer coupled at a source of each of the two more die; a second interconnect layer coupled to a gate of each of the two or more die and to a gate package contact through one or more vias; and an encapsulant that encapsulates the two or more die and at least a portion of the first interconnect layer, each metal layer, and the second interconnect layer.

A display panel includes a circuit substrate, pixel structures and a molding layer. The circuit substrate has first pad structures and second pad structures. The pixel structures are disposed above a display region of the circuit substrate. Each of at least a portion of the pixel structures includes a first light emitting diode, a first conductive block, and a first conductive connection structure. The first light emitting diode is disposed on a corresponding first pad structure. The first conductive block is disposed on a corresponding second pad structure. The first conductive connection structure electrically connects the first light emitting diode to the first conductive block. The molding layer is located above the circuit substrate and surrounds the first light emitting diode and the first conductive block. The first conductive connection structure is located on the molding layer.

A compound micro-assembled device comprises a device substrate. A first component having a first native resolution and a second component having a second native resolution different from the first native resolution are both disposed on the device substrate. The device substrate can comprise a device circuit having a native resolution different from or less than the first and second native resolutions. One or more device interconnections electrically connect the first component to the second component or to the device circuit. In certain embodiments, the first component or the second component can be micro-transfer printed onto the device substrate. In certain embodiments, the compound micro-assembled device can be micro-transfer printed onto a destination substrate or the compound micro-assembled device can comprise a destination substrate onto which the device substrate is micro-transfer printed. At least one of the first component and second components and, optionally, the device substrate, comprises at least a portion of a tether.