A package structure and a method of manufacturing the same are provided. The package structure includes a die, a RDL structure, an encapsulant and a conductive terminal. The die is on a redistribution layer (RDL) structure. The RDL structure comprises a polymer layer and a RDL in the polymer layer. The encapsulant is on the RDL structure and laterally aside the die. The encapsulant comprises a body part and an extending part underlying the body part. The conductive terminal is electrically connected to the RDL structure and the die. The body part of the encapsulant encapsulates sidewalls of the die. The extending part of the encapsulant extends into the polymer layer.

Various embodiments are related to substrates having one or more well structures with a trapezoidal cylinder shaped through hole via extending from the bottom of the well structure though the substrate.

Semiconductor packaging substrates and processing sequences are described. In an embodiment, a packaging substrate includes a build-up structure, and a patterned metal contact layer partially embedded within the build-up structure and protruding from the build-up structure. The patterned metal contact layer may include an array of surface mount (SMT) metal bumps in a chip mount area, a metal dam structure or combination thereof.

A package structure and a method of manufacturing the same are provided. The package structure includes a die, a RDL structure, an encapsulant and a conductive terminal. The die is on a redistribution layer (RDL) structure. The RDL structure comprises a polymer layer and a RDL in the polymer layer. The encapsulant is on the RDL structure and laterally aside the die. The encapsulant comprises a body part and an extending part underlying the body part. The conductive terminal is electrically connected to the RDL structure and the die. The body part of the encapsulant encapsulates sidewalls of the die. The extending part of the encapsulant extends into the polymer layer.

An electronics package includes an insulating substrate, a first electrical component coupled to a bottom surface of the insulating substrate, and a first conductor layer formed adjacent the bottom surface of the insulating substrate. The electronics package also includes a second conductor layer formed on a top surface of the insulating substrate and extending through a plurality of vias in the insulating substrate to electrically couple with the first electrical component and the first conductor layer. A second electrical component is electrically coupled to the first conductor layer and the first electrical component and the second electrical component are positioned in a stacked arrangement.

A semiconductor package includes a semiconductor chip on a redistribution substrate and including a body, a chip pad on the body, and a pillar on the chip pad, a connection substrate including base layers and a lower pad on a bottom surface of a lowermost one of the base layers, a first passivation layer between the semiconductor chip and the redistribution substrate, and a dielectric layer between the redistribution substrate and the connection substrate. The first passivation layer and the dielectric layer include different materials from each other. A bottom surface of the pillar, a bottom surface of the first passivation layer, a bottom surface of a molding layer, a bottom surface of the lower pad, and a bottom surface of the dielectric layer are coplanar with each other.

A semiconductor package includes an interconnect structure, wherein interconnect structure include a semiconductor substrate comprising a first side and a second side opposite to the first side, a routing structure disposed at the first side of the semiconductor substrate, wherein a first die is electrically coupled to a second die through at least the routing structure, and a metallization pattern disposed at the second side of the semiconductor substrate, wherein the metallization pattern comprises a first metallization feature and a second metallization feature. The second metallization feature is electrically isolated, and a through via extending through the semiconductor substrate electrically couples the routing structure to the first metallization feature. The structure may be formed using a process that involves only bonding/debonding of two carrier substrates.

A method of manufacturing an electronic device may include providing alignment conductive pads and internal interconnects along an upper side of a first carrier and coupling alignment interconnects of a connect component to the alignment conductive pads. The method also includes encapsulating the connect component and the internal interconnects in a lower encapsulant, and covering an upper side of the lower encapsulant with an upper substrate. The method also includes coupling, via the upper substrate, first interconnects of a first electronic component and a second electronic component to the connect component interconnects and second interconnects of the first electronic component and the second electronic component to the internal interconnects. The method further includes removing the first carrier from a lower side of the lower encapsulant, and covering the lower side of the lower encapsulant with a lower substrate. Other examples and related electronic devices are also disclosed herein.