The present inventive concept relates to a foldable layered connection comprising: a substrate having a first major surface and an opposing second major surface; a node of connector material arranged to contact the substrate via the first major surface; a released extension comprising a core of connector material arranged to be in communicative contact with the node of connector material, and flexible material arranged to at least partially enclose the core; wherein the released extension is configured to be hingedly connected to the node and to fold towards the second major surface, and wherein a portion of the core of connector material is exposed, forming a contact of connector material, wherein the contact is electrically isolated from the second major surface and arranged such that it is facing away from the second major surface when the released extension is folded towards the second major surface.

A semiconductor device includes: a lead frame that has one end in contact with the upper surface of the second terminal of the semiconductor element in the sealing portion, and that has the other end exposed from the sealing portion; and a control conductive bonding material that bonds between the upper surface of the second terminal of the semiconductor element and the one end of the lead frame, and the control conductive bonding material having electric conductivity.

In a first step of a method of manufacturing a semiconductor device, a portion to be the first lead frame is formed by selectively punching a metal plate, furthermore, notch portions depressed in the reference direction are formed on both side surfaces of a portion, of the first lead frame where the first bent portion is formed, in line contact with the first conductive layer in the reference direction; in the second step of the method, a first bent portion is formed by bending the one end of the first lead frame so as to protrude downward along the reference direction; and in the third step of the method, the upper surface of the first conductive layer and the lower surface of the first bent portion of the first lead frame are joined at the end of the substrate, by the first conductive bonding material, furthermore, the upper surface of the first conductive layer and the notch portions of the first bent portion are joined, by embedding a part of the first conductive bonding material in the notch portions.

The one end portion of the connector of the semiconductor device includes: a horizontal portion; a first inclined portion that is connected to the horizontal portion and is located closer to the tip end side of the one end than the horizontal portion, and the first inclined portion having a shape inclined downward from the horizontal portion; and a control bending portion that is connected to the first inclined portion and positioned at the tip of the one end portion, and the control bending portion bent downwardly along the bending axis direction. The lower surface of the control bending portion is in contact with an upper surface of the second terminal.

An electrical connection member (1, 301, 401, 501, 601) includes a clad material (10, 110, 610) including at least both a first Cu layer (12) made of a Cu material and a low thermal expansion layer (11) made of an Fe material or Ni material having an average thermal expansion coefficient from room temperature to 300° C. smaller than that of the first Cu layer, the first Cu layer and the low thermal expansion layer being bonded to each other.

A semiconductor package includes a die pad having a die attach surface, a semiconductor die mounted on the die attach surface and having a first bond pad at an upper surface facing away from the die attach surface, an interconnect clip including a first segment which at least partially encloses a central opening, a second segment vertically offset and spaced apart from the first segment, and a support extending between the first segment and the second segment. The package further includes an electrically insulating encapsulant covering the semiconductor die. An upper surface of the first segment of the interconnect clip is exposed from a planar surface of the encapsulant. A lower surface of the second segment is flush against the upper surface of the semiconductor die and conductively connected to the first bond pad.

A semiconductor device includes: a substrate; a semiconductor element that disposed on the upper surface of the substrate; a sealing portion that seals the substrate and the semiconductor element; a first lead frame that has one end in contact with a upper surface of the first conductive layer at an end extending in the side direction of the upper surface of the substrate in the sealing portion, and has the other end exposed from the sealing portion; a first conductive bonding material that bonds between the upper surface of the first conductive layer and the lower surface side of the one end portion of the first lead frame at the end portion of the substrate, and has electrical conductivity.

A semiconductor device includes: a lead frame that has one end in contact with the upper surface of the second terminal of the semiconductor element in the sealing portion, and that has the other end exposed from the sealing portion; and a control conductive bonding material that bonds between the upper surface of the second terminal of the semiconductor element and the one end of the lead frame, and the control conductive bonding material having electric conductivity.

A semiconductor package includes a die pad having a die attach surface, a semiconductor die mounted on the die attach surface and having a first bond pad at an upper surface facing away from the die attach surface, an interconnect clip including a first segment which at least partially encloses a central opening, a second segment vertically offset and spaced apart from the first segment, and a support extending between the first segment and the second segment. The package further includes an electrically insulating encapsulant covering the semiconductor die. An upper surface of the first segment of the interconnect clip is exposed from a planar surface of the encapsulant. A lower surface of the second segment is flush against the upper surface of the semiconductor die and conductively connected to the first bond pad.

Implementations of semiconductor packages may include one or more die coupled over a substrate, an electrically conductive spacer coupled over the substrate, and a clip coupled over and to the one or more die and the electrically conductive spacer. The clip may electrically couple the one or more die and the electrically conductive spacer.