An electrical connection member (1, 301, 401, 501, 601) includes a clad material (10, 110, 610) including at least both a first Cu layer (12) made of a Cu material and a low thermal expansion layer (11) made of an Fe material or Ni material having an average thermal expansion coefficient from room temperature to 300 C. smaller than that of the first Cu layer, the first Cu layer and the low thermal expansion layer being bonded to each other.

A power module providing an improved manufacture yield and having an ensured stable joint strength and accordingly improved reliability is provided. The power module includes: a base portion having one surface on which an electrode portion is formed; a conductor portion disposed to face the one surface of the base portion on which the electrode portion is formed, for making electrical connection with the outside; and an interconnect portion connected to the electrode portion formed on the one surface of the base portion and to the surface of the conductor portion facing the one surface of the base portion for electrically connecting the electrode portion to the conductor portion.

To provide a semiconductor module that has high reliability of electric connection by a solder and is inexpensive. A joint surface of an electrode jointing portion that is opposed to a surface to be jointed of a gate electrode of a bare-chip FET and a joint surface of a substrate jointing portion that is opposed to a surface to be jointed of another wiring pattern include an outgas releasing mechanism that makes outgas generated from a molten solder during solder jointing of a metal plate connector be released from solders interposed between the joint surfaces and the surfaces to be jointed.

To provide a semiconductor module capable of shortening of the manufacturing tact time, reducing the manufacturing costs, and improving assembility. A semiconductor module (30) includes substrate (31) made of metal, an insulating layer (32) formed on the substrate (31), a plurality of wiring patterns (33a to 33d) formed on the insulating layer (32), a bare-chip transistor (35) mounted on a wiring pattern (33a) via a solder (34a); and a metal plate connector (36a, 36b) jointing an electrode (S, G) of the bare-chip transistor (35) and a wiring pattern (33b, 33c) via a solder (34b, 34c). The metal plate connector (36a, 36b) has a bridge shape, and has a flat surface and a center of gravity at a middle portion of the component.