A method can include coupling a semiconductor chip and an electrode with a substrate. Bottom and top mold die can be use, where the top mold die define a first space and a second space that is separated from the first space. The method can include injecting encapsulation material to form an encapsulation member coupled to and covering at least a portion of the substrate. The encapsulation member can include a housing unit housing the electrode. The electrode can have a conductive sidewall exposed to, and not in contact with the encapsulation member, such that there is open space between the conductive sidewall of the electrode and the encapsulation member from an uppermost surface to a bottommost surface of the encapsulation member, the substrate can having a portion exposed within the open space, and the encapsulation member can have an open cross-section perpendicular to an upper surface of the substrate.

A method can include coupling a semiconductor chip and an electrode with a substrate. Bottom and top mold die can be use, where the top mold die define a first space and a second space that is separated from the first space. The method can include injecting encapsulation material to form an encapsulation member coupled to and covering at least a portion of the substrate. The encapsulation member can include a housing unit housing the electrode. The electrode can have a conductive sidewall exposed to, and not in contact with the encapsulation member, such that there is open space between the conductive sidewall of the electrode and the encapsulation member from an uppermost surface to a bottommost surface of the encapsulation member, the substrate can having a portion exposed within the open space, and the encapsulation member can have an open cross-section perpendicular to an upper surface of the substrate.

In some aspects, the techniques described herein relate to an electronic device including: a substrate; a metallization layer, the metallization layer having: a first surface disposed on the substrate; a second surface opposite the first surface; and a corrosion-prevention implant layer disposed in the metallization layer, the corrosion-prevention implant layer extending from the second surface to a depth from the second surface in the metallization layer, the depth being less than a thickness of the metallization layer; and an electrical connector coupled with the second surface.

In some aspects, the techniques described herein relate to an electronic device including: a substrate; a metallization layer, the metallization layer having: a first surface disposed on the substrate; a second surface opposite the first surface; and a corrosion-prevention implant layer disposed in the metallization layer, the corrosion-prevention implant layer extending from the second surface to a depth from the second surface in the metallization layer, the depth being less than a thickness of the metallization layer; and an electrical connector coupled with the second surface.

A power semiconductor device including a first and second die, each including a plurality of conductive contact regions and a passivation region including a number of projecting dielectric regions and a number of windows. Adjacent windows are separated by a corresponding projecting dielectric region with each conductive contact region arranged within a corresponding window. A package of the surface mount type houses the first and second dice. The package includes a first bottom insulation multilayer and a second bottom insulation multilayer carrying, respectively, the first and second dice. A covering metal layer is arranged on top of the first and second dice and includes projecting metal regions extending into the windows to couple electrically with corresponding conductive contact regions. The covering metal layer moreover forms a number of cavities, which are interposed between the projecting metal regions so as to overlie corresponding projecting dielectric regions.

A power semiconductor device including a first and second die, each including a plurality of conductive contact regions and a passivation region including a number of projecting dielectric regions and a number of windows. Adjacent windows are separated by a corresponding projecting dielectric region with each conductive contact region arranged within a corresponding window. A package of the surface mount type houses the first and second dice. The package includes a first bottom insulation multilayer and a second bottom insulation multilayer carrying, respectively, the first and second dice. A covering metal layer is arranged on top of the first and second dice and includes projecting metal regions extending into the windows to couple electrically with corresponding conductive contact regions. The covering metal layer moreover forms a number of cavities, which are interposed between the projecting metal regions so as to overlie corresponding projecting dielectric regions.

In a general aspect, an apparatus can include an inner package including a first silicon carbide die having a die gate conductor coupled to a common gate conductor, and a second silicon carbide die having a die gate conductor coupled to the common gate conductor. The apparatus can include an outer package including a substrate coupled to the common gate conductor, and a clip coupled to the inner package and coupled to the substrate.

In a general aspect, an apparatus can include an inner package including a first silicon carbide die having a die gate conductor coupled to a common gate conductor, and a second silicon carbide die having a die gate conductor coupled to the common gate conductor. The apparatus can include an outer package including a substrate coupled to the common gate conductor, and a clip coupled to the inner package and coupled to the substrate.

One example of a pre-molded lead frame includes a mold body, a plurality of recesses, and a plurality of first leads. The mold body includes a first main surface and a second main surface opposite to the first main surface. Each recess of the plurality of recesses extends from the first main surface into the mold body. The plurality of first leads are coupled to the mold body and extend from a third surface of the mold body. The third surface extends between the first main surface and the second main surface.

One example of a pre-molded lead frame includes a mold body, a plurality of recesses, and a plurality of first leads. The mold body includes a first main surface and a second main surface opposite to the first main surface. Each recess of the plurality of recesses extends from the first main surface into the mold body. The plurality of first leads are coupled to the mold body and extend from a third surface of the mold body. The third surface extends between the first main surface and the second main surface.