A fingerprint sensor package includes: a first substrate including a core insulating layer including a first surface and a second surface and a through-hole, a first bonding pad on the second surface, and an external connection pad between an edge of the second surface and the first bonding pad; a second substrate in the through-hole and including a third surface and a fourth surface, and including first sensing patterns on the third surface, spaced apart in a first direction, and extending in a second direction, second sensing patterns spaced apart from each other in the second direction and extending in the first direction, and a second bonding pad on the fourth surface; a conductive support electrically connecting the first bonding pad and the second bonding pad and supporting the first substrate and the second substrate; a controller chip on the second substrate; and a molding layer on the second surface.

In some examples, a direct current (DC)-DC power converter package comprises a controller, a conductive member, and a first field effect transistor (FET) coupled to the controller and having a first source and a first drain, the first FET coupled to a first portion of the conductive member. The package also comprises a second FET coupled to the controller and having a second source and a second drain, the second FET coupled to a second portion of the conductive member, the first and second portions of the conductive member being non-overlapping in a horizontal plane. The first and second FETs are non-overlapping.

In a power semiconductor device, an IGBT has a collector electrode bonded to a metal plate by a bonding material. A diode has a cathode electrode bonded to the metal plate by the bonding material. An interconnection member is bonded to an emitter electrode of the IGBT by a bonding material. The bonding material includes a bonding material and a bonding material. The bonding material is interposed between the IGBT and the interconnection member. The bonding material fills a through hole formed in the interconnection member. The bonding material reaches the bonding material and is therefore connected to the bonding material.

A semiconductor module includes: a first conductive portion; a second conductive portion spaced from the first conductive portion in a first direction; first semiconductor elements electrically bonded to the first conductive portion and mutually spaced in a second direction perpendicular to the first direction; and second semiconductor elements electrically bonded to the second conductive portion and mutually spaced in the second direction. The semiconductor module further includes: a first input terminal electrically connected to the first conductive portion; a second input terminal of opposite polarity to the first input terminal; and an output terminal opposite from the two input terminals in the first direction and electrically connected to the second conductive portion. The semiconductor module further includes: a first conducting member connected to the first semiconductor elements and second conductive portion; and a second conducting member connected to the second semiconductor elements and second input terminal.

A semiconductor module includes: a first conductive portion; a second conductive portion spaced from the first conductive portion in a first direction; first semiconductor elements electrically bonded to the first conductive portion and mutually spaced in a second direction perpendicular to the first direction; and second semiconductor elements electrically bonded to the second conductive portion and mutually spaced in the second direction. The semiconductor module further includes: a first input terminal electrically connected to the first conductive portion; a second input terminal of opposite polarity to the first input terminal; and an output terminal opposite from the two input terminals in the first direction and electrically connected to the second conductive portion. The semiconductor module further includes: a first conducting member connected to the first semiconductor elements and second conductive portion; and a second conducting member connected to the second semiconductor elements and second input terminal.

A semiconductor module includes: a first conductive portion; a second conductive portion spaced from the first conductive portion in a first direction; first semiconductor elements electrically bonded to the first conductive portion and mutually spaced in a second direction perpendicular to the first direction; and second semiconductor elements electrically bonded to the second conductive portion and mutually spaced in the second direction. The semiconductor module further includes: a first input terminal electrically connected to the first conductive portion; a second input terminal of opposite polarity to the first input terminal; and an output terminal opposite from the two input terminals in the first direction and electrically connected to the second conductive portion. The semiconductor module further includes: a first conducting member connected to the first semiconductor elements and second conductive portion; and a second conducting member connected to the second semiconductor elements and second input terminal.

Implementations of a semiconductor package may include two or more die, each of the two more die coupled to a metal layer at a drain of each of the two more die, the two or more die and each metal layer arranged in two parallel planes; a first interconnect layer coupled at a source of each of the two more die; a second interconnect layer coupled to a gate of each of the two or more die and to a gate package contact through one or more vias; and an encapsulant that encapsulates the two or more die and at least a portion of the first interconnect layer, each metal layer, and the second interconnect layer.

In a power semiconductor device, an IGBT has a collector electrode bonded to a metal plate by a bonding material. A diode has a cathode electrode bonded to the metal plate by the bonding material. An interconnection member is bonded to an emitter electrode of the IGBT by a bonding material. The bonding material includes a bonding material and a bonding material. The bonding material is interposed between the IGBT and the interconnection member. The bonding material fills a through hole formed in the interconnection member. The bonding material reaches the bonding material and is therefore connected to the bonding material.

A process for batch fabrication of circuit component is disclosed via simultaneously packaging multiple circuit component dice in a matrix. Each die has electrodes on its tops and bottom surfaces to be electrically connected to a corresponding electrical terminal of the circuit component it's packaged in. For each circuit component in the matrix, the process forms preparative electrical terminals on a copper substrate. Component dice are pick-and-placed onto the copper substrate with their bottom electrodes landing on corresponding preparative electrical terminal. Horizontal conductor plates are then placed horizontally on top of the circuit component dice, with bottom surface at one end of each plate landing on the dice's top electrode. An opening is formed at the opposite end and has vertical conductive surfaces. A vertical conductor block is placed into the opening and lands on the preparative electrical terminal, and the opening's vertical conductive surfaces facing the top end side surface of the vertical block. A thermal reflow then simultaneously melts pre-applied soldering material so that each circuit component die and its vertical conductor block are soldered to the copper substrate below and its horizontal conductor plate above.

In a power semiconductor device, an IGBT has a collector electrode bonded to a metal plate by a bonding material. A diode has a cathode electrode bonded to the metal plate by the bonding material. An interconnection member is bonded to an emitter electrode of the IGBT by a bonding material. The bonding material includes a bonding material and a bonding material. The bonding material is interposed between the IGBT and the interconnection member. The bonding material fills a through hole formed in the interconnection member. The bonding material reaches the bonding material and is therefore connected to the bonding material.