An electronic device includes a lead frame, a first clip, a second clip, and a plurality of semiconductor devices. The first clip is stacked with the lead frame. The second clip stacked with the first clip and the lead frame. The second clip includes a first protrusion that engages the first clip and secures the second clip to the first clip. The semiconductor devices are conductively coupled to the lead frame via the first clip and the second clip.

In a power semiconductor device, an IGBT has a collector electrode bonded to a metal plate by a bonding material. A diode has a cathode electrode bonded to the metal plate by the bonding material. An interconnection member is bonded to an emitter electrode of the IGBT by a bonding material. The bonding material includes a bonding material and a bonding material. The bonding material is interposed between the IGBT and the interconnection member. The bonding material fills a through hole formed in the interconnection member. The bonding material reaches the bonding material and is therefore connected to the bonding material.

Provided is a semiconductor module enabling to effectively reduce, with a relatively simple structure, a thermal strain occurring in a bonding section between a semiconductor chip and other conductor members. The semiconductor module is characterized by being provided with: a first wiring layer; a semiconductor element bonded on the first wiring layer via a first bonding layer; a first electrode bonded on the semiconductor element via a second bonding layer; a second electrode connected on the first electrode; and a second wiring layer connected on the second electrode. The semiconductor module is also characterized in that: the width of the second electrode, said width being in the short-side direction, is more than the thickness of the first electrode; and the second electrode is disposed at a position off the center position of the semiconductor element.

In a power semiconductor device, an IGBT has a collector electrode bonded to a metal plate by a bonding material. A diode has a cathode electrode bonded to the metal plate by the bonding material. An interconnection member is bonded to an emitter electrode of the IGBT by a bonding material. The bonding material includes a bonding material and a bonding material. The bonding material is interposed between the IGBT and the interconnection member. The bonding material fills a through hole formed in the interconnection member. The bonding material reaches the bonding material and is therefore connected to the bonding material.

An electronic device includes a lead frame, a first clip, a second clip, and a plurality of semiconductor devices. The first clip is stacked with the lead frame. The second clip stacked with the first clip and the lead frame. The second clip includes a first protrusion that engages the first clip and secures the second clip to the first clip. The semiconductor devices are conductively coupled to the lead frame via the first clip and the second clip.

It is an object of the present invention to provide a semiconductor module in which a bonded portion has high reliability, and that has a small area. A semiconductor module includes a plurality of metal plates extending in a horizontal direction and stacked in a vertical direction, at least one switching element, and at least one circuit element. The at least one switching element is bonded between two of the plurality of metal plates, facing each other in a vertical direction. The at least one circuit element is bonded between two of the plurality of metal plates, facing each other in a vertical direction. Disposed between the plurality of metal plates is an insulating material. At least one of the plurality of metal plates is bonded to the at least one switching element and the at least one circuit element.

In a power semiconductor device, an IGBT has a collector electrode bonded to a metal plate by a bonding material. A diode has a cathode electrode bonded to the metal plate by the bonding material. An interconnection member is bonded to an emitter electrode of the IGBT by a bonding material. The bonding material includes a bonding material and a bonding material. The bonding material is interposed between the IGBT and the interconnection member. The bonding material fills a through hole formed in the interconnection member. The bonding material reaches the bonding material and is therefore connected to the bonding material.

In semiconductor device, a substrate unit includes an insulating substrate, a first conductor substrate and a second conductor substrate which are disposed on one main surface of the insulating substrate and spaced apart from each other, and a third conductor substrate which is disposed on the other main surface opposite to the one main surface of the insulating substrate. A terminal is connected to a surface of a semiconductor element opposite to the first conductor substrate. The terminal extends from a region above the semiconductor element to a region above the second conductor substrate while being connected to the second conductor substrate. At least a part of the terminal, the substrate unit and the semiconductor element is sealed by a resin. The third conductor substrate is exposed from the resin.

An electronic device has a substrate 5, a first electric element 91 provided on a first conductor layer 71, a second electric element 92 provided on the first electric element 91, and a connector 50 having a base end part 45 provided on a second conductor layer 72 and a head part 40 provided on a front surface electrode 92a of the second electric element 92 via a conductive adhesive 75. An area of the base end part 45 placed on the second conductor layer 72 is larger than an area of the head part 40 placed on the second electric element 92. The base end part 45 is located at a side of the substrate 5 compared with the head part 40, and a gravity center position of the connector 50 is at a side of the base end part 45 of the connector 50.

In a semiconductor module, first and second semiconductor chips each include a transistor and a temperature-detecting diode connected between first and second control pads. The first control pad of the first semiconductor chip is connected to a first control terminal, the second control pad of the first semiconductor chip and the first control pad of the second semiconductor chip are connected to a second control terminal, and the second control pad of the second semiconductor chip is connected to a third control terminal.