A semiconductor device includes a semiconductor part between first and second electrodes, first and second control electrodes between the semiconductor part and the second electrode. The semiconductor part includes a first region and a second region around the first region. The semiconductor part includes first and third layers of a first conductivity type and second layers of a second conductivity type. The second layers are provided between the first layer and the second electrode. A second layer faces the first control electrode in the second region. Another second layer faces the second control electrode in the second region. A third layer is provided between the second layer and the second electrode. Another third layer is provided between another second layer and the second electrode. The second layer includes a second conductivity type impurity with a concentration lower than that of a second conductivity type impurity in another second layer.

The disclosure relates to a lead frame assembly for a semiconductor device, the lead frame assembly including: a die attach structure and clip frame structure. The clip frame structure includes: a die connection portion configured to contact to one or more contact terminals on a top side of the semiconductor die; one or more electrical leads extending from the die connection portion at a first end, and a lead supporting member extending from a second end of the one or more leads; and a plurality of clip support members arranged orthogonally to the one or more electrical leads. The plurality of support members and the lead supporting member are configured to contact the die attach structure. The present disclosure also relates a die attach structure and clip frame structure for a semiconductor device, a semiconductor device including the same and a method of manufacturing the semiconductor device.

A semiconductor device according to one embodiment includes a first leadframe, a second leadframe, a semiconductor chip, and a conductive member. The second leadframe has a first face provided with a recess and is separated from the first leadframe. The semiconductor chip is mounted on the first leadframe. The conductive member has a second face connected to the first face with a conductive adhesive, the second face provided with a protrusion housed in the recess at least partially, and the conductive member electrically connected the semiconductor chip and the second leadframe to each other. The recess and the protrusion are longer in a first direction in which the first face extends than in a second direction along the first face and orthogonal to the first direction.

A semiconductor device includes a semiconductor element, a first lead supporting the semiconductor element, a second lead separated from the first lead, and a connection lead electrically connecting the semiconductor element to the second lead. The connection lead has an end portion soldered to the second lead. This connection-lead end portion has a first surface facing the semiconductor element and a second surface opposite to the first surface. The second lead is formed with a recess that is open toward the semiconductor element. The recess has a side surface facing the second surface of the connection-lead end portion. A solder contact area of the second surface of the connection-lead end portion is larger than a solder contact area of the first surface of the connection-lead end portion.

A semiconductor device includes a semiconductor part between first and second electrodes, first and second control electrodes between the semiconductor part and the second electrode. The semiconductor part includes a first region and a second region around the first region. The semiconductor part includes first and third layers of a first conductivity type and second layers of a second conductivity type. The second layers are provided between the first layer and the second electrode. A second layer faces the first control electrode in the second region. Another second layer faces the second control electrode in the second region. A third layer is provided between the second layer and the second electrode. Another third layer is provided between another second layer and the second electrode. The second layer includes a second conductivity type impurity with a concentration lower than that of a second conductivity type impurity in another second layer.

A semiconductor device including a substrate; a chip on which a surface electrode is formed; and a lead. The lead includes a first electrode connecting portion disposed on the surface electrode and electrically connected to the surface electrode of the chip via a conductive bonding material; a second electrode connecting portion electrically connected to an electrode portion of a wiring pattern. A lead connected to the first electrode connecting portion and the second electrode connecting portion. The lead further has a thermal shrinking stress equalizing structure on a portion of an outer periphery of the first electrode connecting portion. The lead is configured to make a thermal shrinking stress applied to a conductive bonding material between the first electrode connecting portion and the surface electrode equal.

A semiconductor device includes: a seal portion; a first electronic element; a first lead terminal; a second lead terminal having one end that is disposed to be close to the one end of the first lead terminal within the seal portion, and another end that is exposed from another end of the seal portion, the other end of the seal portion being along the longitudinal direction; a first connecting element disposed within the seal portion, and having one end that is electrically connected to the first electrode disposed on the first electronic element, and another end that is electrically connected to the one end of the second lead terminal; and a conductive bonding agent.

A semiconductor device includes: a seal portion; an electronic element disposed within the seal portion; a first lead terminal; a second lead terminal having one end that is disposed to be close to the one end of the first lead terminal within the seal portion, and another end that is exposed from the seal portion; a first connecting element disposed within the seal portion, and having one end that is electrically connected to a control electrode of the electronic element, and another end that is electrically connected to the one end of the second lead terminal; a first conductive bonding agent for joining together the control electrode of the electronic element and the one end of the first connecting element in a conductive manner; and a second conductive bonding agent.

A clip for a semiconductor package and a semiconductor having a clip is disclosed. In one example, the clip includes a first planar portion, a plurality of first pillars, and a plurality of first solder balls. Each first pillar of the plurality of first pillars is coupled to the first planar portion. Each first solder ball of the plurality of first solder balls is coupled to a corresponding first pillar of the plurality of first pillars.

A semiconductor package according to an embodiment of the present invention Includes: a lead frame comprising a pad and a lead spaced apart from the pad by a regular interval; a semiconductor chip adhered on the pad; and a clip structure electrically connecting the semiconductor chip and the lead, wherein an one end of the clip structure connected to the semiconductor chip inclines with respect to upper surfaces of chip pads of the semiconductor chip and is adhered to the upper surfaces of the chip pads of the semiconductor chip. A semiconductor package according to another embodiment of the present invention includes: a semiconductor chip comprising one or more chip pads; one or more leads electrically connected to the chip pads; and a sealing member covering the semiconductor chip, wherein an one end of the lead inclines with respect to one surface of the chip pad and is adhered to the chip pad and an other end of the lead is exposed to the outside of the sealing member.