A semiconductor device includes: a seal portion; a first electronic element; a first lead terminal; a second lead terminal having one end that is disposed to be close to the one end of the first lead terminal within the seal portion, and another end that is exposed from another end of the seal portion, the other end of the seal portion being along the longitudinal direction; a first connecting element disposed within the seal portion, and having one end that is electrically connected to the first electrode disposed on the first electronic element, and another end that is electrically connected to the one end of the second lead terminal; and a conductive bonding agent.

The present disclosure is directed to a high throughput clip bonding tool or system which is flexible and easily adapts to different clip bond pitches or sizes. The clip bonding system may be an integrated system with various modules, including a clip singulation module, a feeder module, a transfer module and a clip attach module within a shared footprint. For example, an incoming clip source may be fed to the clip singulation module for clip singulation before the singulated clips are transferred by the feeder and transfer modules to a clip presentation area for clip alignment before pickup. A pickup tool of the clip attach module is configured to facilitate pickup and attachment of clips onto the semiconductor packages to be clip bonded. For example, the pickup head is programmable to facilitate clip bonding process of different applications which may require clips and packages with different sizes.

A semiconductor device includes a semiconductor element, a first lead supporting the semiconductor element, a second lead separated from the first lead, and a connection lead electrically connecting the semiconductor element to the second lead. The connection lead has an end portion soldered to the second lead. This connection-lead end portion has a first surface facing the semiconductor element and a second surface opposite to the first surface. The second lead is formed with a recess that is open toward the semiconductor element. The recess has a side surface facing the second surface of the connection-lead end portion. A solder contact area of the second surface of the connection-lead end portion is larger than a solder contact area of the first surface of the connection-lead end portion.

A semiconductor device includes: a seal portion; a first electronic element; a first lead terminal; a second lead terminal having one end that is disposed to be close to the one end of the first lead terminal within the seal portion, and another end that is exposed from another end of the seal portion, the other end of the seal portion being along the longitudinal direction; a first connecting element disposed within the seal portion, and having one end that is electrically connected to the first electrode disposed on the first electronic element, and another end that is electrically connected to the one end of the second lead terminal; and a conductive bonding agent.

A semiconductor device includes: a seal portion; an electronic element disposed within the seal portion; a first lead terminal; a second lead terminal having one end that is disposed to be close to the one end of the first lead terminal within the seal portion, and another end that is exposed from the seal portion; a first connecting element disposed within the seal portion, and having one end that is electrically connected to a control electrode of the electronic element, and another end that is electrically connected to the one end of the second lead terminal; a first conductive bonding agent for joining together the control electrode of the electronic element and the one end of the first connecting element in a conductive manner; and a second conductive bonding agent.

A semiconductor device includes: a semiconductor element including a first electrode; a conductive member including a first bonding part facing the first electrode; a bonding layer interposed between the first electrode and the first bonding part; and a regulator bonded to at least one of the first electrode and the first bonding part. The regulator faces the bonding layer in a direction orthogonal to a thickness direction of the semiconductor element.

An electronic module has a first substrate 11; a second substrate 21 provided in one side of the first substrate 11; and a chip module 100 provided between the first substrate 11 and the second substrate 21. The chip module 100 has an electronic element 13, 23 and a connecting body 60, 70, 80 electrically connected to the electronic element 13, 23. The electronic element 13, 23 extends along a first direction that is a thickness direction of the electronic module.

In a general aspect, an apparatus can include a leadframe. The apparatus can also include a first semiconductor die coupled with a first side of a first portion of the leadframe, and a second semiconductor die coupled with a second side of the first portion of the leadframe. The apparatus can also include a first substrate coupled with a second side of the first semiconductor die. The first substrate can be further coupled with a first side of a second portion of the leadframe and a first side of a third portion of the leadframe. The apparatus can also further include a second substrate coupled with a second side of the second semiconductor die. The second substrate can be further coupled with a second side of the second portion of the leadframe and a second side of the third portion of the leadframe.

According to one embodiment, a semiconductor device includes a first semiconductor element, a first element insulating part, and an insulating sealing member. The first semiconductor element includes a first semiconductor chip and a first chip electrode electrically connected to the first semiconductor chip. The first semiconductor chip has a first surface crossing a first direction, a second surface crossing the first direction and distant from the first surface, and a third surface between the first and second surfaces. The first chip electrode is disposed on the first surface. The first element insulating part includes a first portion and a second portion continuous to the first portion. The insulating sealing member includes a third portion and a fourth portion continuous to the third portion. The first portion is between the first surface and the third portion, and the second portion is between the third surface and the fourth portion.

A semiconductor device includes a semiconductor element, a first lead supporting the semiconductor element, a second lead separated from the first lead, and a connection lead electrically connecting the semiconductor element to the second lead. The connection lead has an end portion soldered to the second lead. This connection-lead end portion has a first surface facing the semiconductor element and a second surface opposite to the first surface. The second lead is formed with a recess that is open toward the semiconductor element. The recess has a side surface facing the second surface of the connection-lead end portion. A solder contact area of the second surface of the connection-lead end portion is larger than a solder contact area of the first surface of the connection-lead end portion.