An electronic module has a first substrate 11, an electronic element 13, 23 disposed on one side of the first substrate 11, a second substrate 21 disposed on one side of the electronic element 13, 23, a first coupling body 210 disposed between the first substrate 11 and the second substrate 21, a second coupling body 220 disposed between the first substrate 11 and the second substrate 21, and shorter than the first coupling body 210, and a sealing part 90 which seals at least the electronic element. The first coupling body 210 is not electrically connected to the electronic element. The second coupling body 220 is electrically connected to the electronic element 13, 23.

A semiconductor module is provided with a conductive member having one end, in a longitudinal direction, joined to an electrode of a semiconductor element that is mounted on an insulating substrate, the other end of the conductive member in the longitudinal direction being joined to a component different from the electrode. The conductive member is made up of a metal sheet, and has a bent portion at the one end and at the other end. The bent portion provided at the one end has a cut in a leading end portion, in the longitudinal direction, and an end joining section at which the cut is not present is joined to the electrode of the semiconductor element. As a result, a semiconductor module can be realized that allows combination of increased current capacity with improved reliability.

A semiconductor module is provided with a conductive member having one end, in a longitudinal direction, joined to an electrode of a semiconductor element that is mounted on an insulating substrate, the other end of the conductive member in the longitudinal direction being joined to a component different from the electrode. The conductive member is made up of a metal sheet, and has a bent portion at the one end and at the other end. The bent portion provided at the one end has a cut in a leading end portion, in the longitudinal direction, and an end joining section at which the cut is not present is joined to the electrode of the semiconductor element. As a result, a semiconductor module can be realized that allows combination of increased current capacity with improved reliability.

An electronic device includes a lead frame, a first clip, a second clip, and a plurality of semiconductor devices. The first clip is stacked with the lead frame. The second clip stacked with the first clip and the lead frame. The second clip includes a first protrusion that engages the first clip and secures the second clip to the first clip. The semiconductor devices are conductively coupled to the lead frame via the first clip and the second clip.

The semiconductor device includes a metal plate, a semiconductor element held on the metal plate, a wiring board connected to a surface electrode of the semiconductor element in a facing manner and a conductor fixed to the wiring board wired to the semiconductor element. The conductor has a plate-like shape. One end of the conductor is arranged to be connectable to an outside. One surface side of another end of the conductor is fixed to a surface of the wiring hoard. The conductor includes at least one protruding step on the one surface of the other end. A top portion of the protruding step includes a contact surface parallel to the surface of the wiring board. The other end of the conductor is fixed to the wiring board by the contact surface and the surface of the wiring board coming into close contact with each other.

Provided is a semiconductor package and a method of manufacturing the same, and more particularly, to a semiconductor package and a method of manufacturing the same in which stress applied while molding is efficiently dispersed by a three-dimensional clip structure so that structural reliability may be improved.

In a semiconductor module, first and second semiconductor chips each include a transistor and a temperature-detecting diode connected between first and second control pads. The first control pad of the first semiconductor chip is connected to a first control terminal, the second control pad of the first semiconductor chip and the first control pad of the second semiconductor chip are connected to a second control terminal, and the second control pad of the second semiconductor chip is connected to a third control terminal.

According to one embodiment, a semiconductor device includes a first semiconductor element, a first element insulating part, and an insulating sealing member. The first semiconductor element includes a first semiconductor chip and a first chip electrode electrically connected to the first semiconductor chip. The first semiconductor chip has a first surface crossing a first direction, a second surface crossing the first direction and distant from the first surface, and a third surface between the first and second surfaces. The first chip electrode is disposed on the first surface. The first element insulating part includes a first portion and a second portion continuous to the first portion. The insulating sealing member includes a third portion and a fourth portion continuous to the third portion. The first portion is between the first surface and the third portion, and the second portion is between the third surface and the fourth portion.

A semiconductor device according to an embodiment includes: a die pad including an upper surface; a semiconductor chip provided on the upper surface, the semiconductor chip including a rectangular shape, and the semiconductor chip including an element region, and a termination region surrounding the element region; a first electrode provided on the semiconductor chip; a second electrode provided on the semiconductor chip; a first connector provided above the termination region, the first connector including a portion covering each of the four sides of the rectangular shape when viewed from above, and the first connector being electrically connected to the first electrode; and a sealing resin sealing a periphery of the semiconductor chip and the first connector.

A semiconductor power arrangement includes a chip carrier having a first surface and a second surface opposite the first surface. The semiconductor power arrangement further includes a plurality of power semiconductor chips attached to the chip carrier, wherein the power semiconductor chips are inclined to the first and/or second surface of the chip carrier.