There is provided a palladium-coated copper bonding wire that does not cause a shrinkage cavity during first bonding, has high bonding reliability, and is capable of maintaining excellent bonding reliability for a long period of time even in high-temperature and high-humidity environments. A palladium-coated copper bonding wire in which a concentration of palladium is 1.0 mass % or more and 4.0 mass % or less relative to the total of copper, palladium, and a sulfur group element, a total concentration of the sulfur group element is 50 mass ppm or less, and a concentration of sulfur is 5 mass ppm or more and 12 mass ppm or less, a concentration of selenium is 5 mass ppm or more and 20 mass ppm or less, or a concentration of tellurium is 15 mass ppm or more and 50 mass ppm or less, and the palladium-coated copper bonding wire including a palladium-concentrated region with the average concentration of palladium of 6.5 atom % or more and 30.0 atom % or less relative to the total of copper and palladium within a range from a surface of a tip portion of a free air ball formed at a tip of the wire to 5.0 nm or more and 100.0 nm or less.

Encapsulating a bonded wire with low profile encapsulation includes applying encapsulation over a bonded wire that is connected to a die on a first end and to a circuit component on a second end and truncating a shape of the encapsulation to form a truncated shape.

A bonding wire for a semiconductor device, characterized in that the bonding wire includes a Cu alloy core material and a Pd coating layer formed on a surface of the Cu alloy core material, the bonding wire contains an element that provides bonding reliability in a high-temperature environment, and a strength ratio defined by the following Equation (1) is 1.1 to 1.6:
Strength ratio=ultimate strength/0.2% offset yield strength.(1)

Embodiments of molded packages and corresponding methods of manufacture are provided. In an embodiment of a molded package, the molded package includes a laser-activatable mold compound having a plurality of laser-activated regions which are plated with an electrically conductive material to form metal pads and/or metal traces at a first side of the laser-activatable mold compound. A semiconductor die embedded in the laser-activatable mold compound has a plurality of die pads. An interconnect electrically connects the plurality of die pads of the semiconductor die to the metal pads and/or metal traces at the first side of the laser-activatable mold compound.

Encapsulating a bonded wire with low profile encapsulation includes applying encapsulation over a bonded wire that is connected to a die on a first end and to a circuit component on a second end and truncating a shape of the encapsulation to form a truncated shape.

A method is provided for connecting a chip die to a circuit board with a capillary dispenser to deposit gold. The method includes forming a first bond by depositing gold from the dispenser to a board pad on the circuit board; forming a second bond by depositing the gold from the dispenser to a die pad on the chip die; extruding a filament of the gold by the dispenser in a normal direction from the second bond; rotating the filament laterally away from the first bond along a first radius; extruding the filament while rotating the filament towards the first bond along a second radius larger than the first radius; and forming a third bond by depositing the gold on the first bond to form a third bond.

There is provided a bonding wire for a semiconductor device including a coating layer having Pd as a main component on a surface of a Cu alloy core material and a skin alloy layer containing Au and Pd on a surface of the coating layer, the bonding wire further improving 2nd bondability on a Pd-plated lead frame and achieving excellent ball bondability even in a high-humidity heating condition. The bonding wire for a semiconductor device including the coating layer having Pd as a main component on the surface of the Cu alloy core material and the skin alloy layer containing Au and Pd on the surface of the coating layer has a Cu concentration of 1 to 10 at % at an outermost surface thereof and has the core material containing either or both of Pd and Pt in a total amount of 0.1 to 3.0% by mass, thereby achieving improvement in the 2nd bondability and excellent ball bondability in the high-humidity heating condition. Furthermore, a maximum concentration of Au in the skin alloy layer is preferably 15 at % to 75 at %.

A micro-coaxial wire has an overall diameter in a range of 0.1 m-550 m, a conductive core of the wire has a cross-sectional diameter in a range of 0.05 m-304 m, an insulator is disposed on the conductive core with thickness in a range of 0.005 m-180 m, and a conductive shield layer is disposed on the insulator with thickness in a range of 0.009 m-99 m.

There is provided a novel Al wiring material that achieves both of a suppression of chip damage and a thermal shock resistance. In aspect 1, the Al wiring material includes an Al core material and an Al coating layer formed on a surface of the Al core material, and satisfies 1.2?H.sub.1h/H.sub.1s where H.sub.1h is a Vickers hardness of the Al core material (Hv) and H.sub.1s is a Vickers hardness of the Al coating layer (Hv). In aspect 2, the Al wiring material includes an Al core material and an Al coating layer formed on a surface of the Al core material, and satisfies 1.2?H.sub.2h/H.sub.2s where H.sub.2s is a Vickers hardness of the Al core material (Hv) and H.sub.2h is a Vickers hardness of the Al coating layer (Hv).

A wire and a method of manufacturing are provided the wire for use in an organic light emitting diode device includes three parts, a first part and a third part are located at both ends of the wire respectively and each of the first part and the third part is a single wire, a second part is located between the first part and the third part, and the second part is a composite wire, wherein the composite wire comprises at least two wires. By dividing a middle part of one wire into multiple wires, the purpose of changing a wire width of a single wire is achieved, ductility of the wire can be enhanced, thereby avoiding the occurrence of the problem that the device cannot normally work caused by wire fracture during folding, and improving the using efficiency of the device.