A semiconductor device according to the present embodiment includes a first pad, a second pad, a third pad, a first bonding wire joined to the first pad, a second bonding wire provided on the second pad with a second stud bump in between, and a third bonding wire joined to the third pad. The second pad is positioned between the first and third pads. The second bonding wire includes a second ball portion and a second wire portion, the second ball portion being joined to the second stud bump, the second wire portion extending from the second ball portion.

A semiconductor device comprises a semiconductor element including a first electrode located on one side in a first direction, a first terminal electrically connected to the first electrode and a first wire conductively bonded to the first electrode and the first terminal. The first wire includes a main part, a first bond part connected to one end of the main part, and a second bond part connected to another end of the main part. The first bond part is conductively bonded to the first electrode. The second bond part is conductively bonded to the first terminal. As viewed in the first direction, a direction in which the second bond part extends differs from a direction in which the main part extends.

A semiconductor package includes a redistribution wiring layer having redistribution wirings, a sealing member provided on the redistribution wiring layer and having a first surface in contact with the redistribution wiring layer and a second surface opposite to the first surface, a plurality of semiconductor chips sequentially stacked on one another within the sealing member and arranged such that a front surface on which chip pads each of the semiconductor chips are formed faces the redistribution wiring layer, a plurality of trenches extending in a vertical direction from the first surface of the sealing member to the front surfaces of the semiconductor chips and exposing the chip pads, a plurality of conductive wires extending in the vertical direction from the chip pads within the plurality of trenches and electrically connected to the redistribution wirings respectively, and filling members within the plurality of trenches and surrounding the conductive wires.

To provide an Al bonding wire satisfying excellent temperature cycle reliability and a favorable 1st bondability. The Al bonding wire contains 3.0% by mass or more and 10.0% by mass or less of Si, and an average diameter of a Si phase in a cross section (L cross-section) in a center axis direction including a wire center axis of the Al alloy bonding wire is equal to or larger than 0.8 m and equal to or smaller than 5.5 m.