The present invention provides a ball forming method for forming a ball portion at a tip of a bonding wire which includes a core material mainly composed of Cu, and a coating layer mainly composed of Pd and formed over a surface of the core material, wherein the ball portion is formed in non-oxidizing atmosphere gas including hydrocarbon which is gas at room temperature and atmospheric pressure, the method being capable of improving Pd coverage on a ball surface in forming a ball at a tip of the Pd-coated Cu bonding wire.

A method of manufacturing a bond wire having a metal core, a dielectric layer, and a ground connectable metallization, wherein the bond wire has one or more vapor barrier coatings, and manufacturing a die package with at least one bond wire according to the invention.

A die package having a plurality of connection pads, a die substrate supporting a plurality of connection elements, a first lead having a first metal core with a first core diameter, and a dielectric layer surrounding the first metal core, the dielectric layer having a first dielectric thickness that varies along its length and/or the dielectric layer having an outer metal layer at least partially surrounding the dielectric layer, for selectively modifying the electrical characteristics of the lead.

A bond wire having a metal core, a dielectric layer, and a ground connectable metallization, wherein the bond wire has one or more vapor barrier coatings. Further, the present invention relates to a die package with at least one bond wire according to the invention.

A semiconductor apparatus includes a semiconductor device, a lower wire member, and an upper wire member. The semiconductor device includes a semiconductor device body having a main surface, and a metal layer. The lower wire member includes an end surface and an end surface. In a plan view of the main surface, the end surface and the end surface are located inside a periphery of the semiconductor device. The upper wire member is stacked on the lower wire member. In the plan view of the main surface, a portion of the upper wire member is located outside the periphery of the semiconductor device. The upper wire member is joined to the metal layer with the lower wire member being interposed therebetween.

A semiconductor device includes a die pad, a bond post, a die disposed over the die pad, a wire coupled between the die and the bond post and having a first portion bonded to the die at a first bond area and a second portion bonded to the bond post at a second bond area, a first bonding cover disposed over the first portion, and a second bonding cover disposed over the second portion. A method includes bonding a first portion of a wire to a die at a first bond area, bonding a second portion of the wire to a first bond post of a lead frame at a second bond area, applying a bonding material over the first bond area to form a first bonding cover, and applying the bonding material over the second bond area to form a second bonding cover.