There is provided a Cu bonding wire having a Pd coating layer on a surface thereof, that improves bonding reliability of a ball bonded part in a high-temperature and high-humidity environment and is suitable for on-vehicle devices.

The bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface of the Cu alloy core material, and the bonding wire contains In of 0.011 to 1.2% by mass and has the Pd coating layer of a thickness of 0.015 to 0.150 μm. With this configuration, it is able to increase the bonding longevity of a ball bonded part in a high-temperature and high-humidity environment, and thus to improve the bonding reliability. When the Cu alloy core material contains one or more elements of Pt, Pd, Rh and Ni in an amount, for each element, of 0.05 to 1.2% by mass, it is able to increase the reliability of a ball bonded part in a high-temperature environment of 175° C. or more. When an Au skin layer is further formed on a surface of the Pd coating layer, wedge bondability improves.

There is provided a Cu bonding wire having a Pd coating layer on a surface thereof, that improves bonding reliability of a ball bonded part in a high-temperature and high-humidity environment and is suitable for on-vehicle devices.

The bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface of the Cu alloy core material, and the bonding wire contains In of 0.011 to 1.2% by mass and has the Pd coating layer of a thickness of 0.015 to 0.150 μm. With this configuration, it is able to increase the bonding longevity of a ball bonded part in a high-temperature and high-humidity environment, and thus to improve the bonding reliability. When the Cu alloy core material contains one or more elements of Pt, Pd, Rh and Ni in an amount, for each element, of 0.05 to 1.2% by mass, it is able to increase the reliability of a ball bonded part in a high-temperature environment of 175° C. or more. When an Au skin layer is further formed on a surface of the Pd coating layer, wedge bondability improves.

Embodiments include a semiconductor manufacturing method comprising, providing an object to be processed, the object including a semiconductor element, a sealing resin layer sealing the semiconductor element, a ground terminal electrically connected to the semiconductor element and including a first protruding part protruding through a surface of the resin layer, and a signal terminal electrically connected to the semiconductor element and including a second protruding part protruding through the surface of the resin layer; positioning the object in a jig, wherein the jig covers the entire second protruding part of the signal terminal, and wherein the jig only partially covers the first protruding part of the ground terminal, such that at least a first portion of the first protruding part of the ground terminal is left uncovered by the jig; while the object is positioned in the jig, fabricating a conductive shield layer on the resin layer and at least some of the first portion of the first protruding part of the ground terminal, such that the shield layer is electrically connected to ground terminal.

Embodiments include a semiconductor manufacturing method comprising, providing an object to be processed, the object including a semiconductor element, a sealing resin layer sealing the semiconductor element, a ground terminal electrically connected to the semiconductor element and including a first protruding part protruding through a surface of the resin layer, and a signal terminal electrically connected to the semiconductor element and including a second protruding part protruding through the surface of the resin layer; positioning the object in a jig, wherein the jig covers the entire second protruding part of the signal terminal, and wherein the jig only partially covers the first protruding part of the ground terminal, such that at least a first portion of the first protruding part of the ground terminal is left uncovered by the jig; while the object is positioned in the jig, fabricating a conductive shield layer on the resin layer and at least some of the first portion of the first protruding part of the ground terminal, such that the shield layer is electrically connected to ground terminal.

A die interconnect system having a first die with a plurality of connection pads, and a ribbon lead extending from the first die, the ribbon lead having a plurality of metal cores with a core diameter, and a dielectric layer surrounding the metal core with a dielectric thickness, with at least a portion of dielectric being fused between adjacent metal cores along the length of the plurality of metal cores, and an outer metal layer attached to ground.

Disclosed is a temporary protective film for semiconductor sealing molding comprising: a support film; and an adhesive layer provided on one surface or both surfaces of the support film and containing a resin and a silane coupling agent, and the content of the silane coupling agent in the temporary protective film may be more than 5% by mass and less than or equal to 35% by mass with respect to the total mass of the resin.

Disclosed is a temporary protective film for semiconductor sealing molding comprising: a support film; and an adhesive layer provided on one surface or both surfaces of the support film and containing a resin and a silane coupling agent, and the content of the silane coupling agent in the temporary protective film may be more than 5% by mass and less than or equal to 35% by mass with respect to the total mass of the resin.

A method for exposing a microwire from it glass coating in a glass coated microwire. The method for exposing the microwire is facilitated by way of sufficiently bending the glass coated microwire to break the glass coating while maintaining the embedded microwire intact.

A method for exposing a microwire from it glass coating in a glass coated microwire. The method for exposing the microwire is facilitated by way of sufficiently bending the glass coated microwire to break the glass coating while maintaining the embedded microwire intact.

An integrated circuit (IC) package includes a substrate and an IC die carried by the substrate. An encapsulated body is over the IC die. At least one grounding wire is within the encapsulated body and has a proximal end coupled to the substrate and a distal end exposed on an outer surface of the encapsulated body. An electrically conductive shield layer is on the outer surface of the encapsulated body and in contact with the exposed distal end of the at least one grounding wire.