A semiconductor device includes a semiconductor chip having an electrode pad, a terminal having a terminal pad, and a bonding wire. The bonding wire includes a first end portion, a first bonded portion bonded to the electrode pad, a loop portion extending between the semiconductor chip and the terminal, and a second bonded portion bonded to the terminal pad. The second bonded portion is a wedge bonded portion comprising a second end portion of the bonding wire opposite to the first end portion. A length of the first bonded portion in the first direction is greater than a length of the second bonded portion in the first direction.

A packaged radio frequency transistor amplifier includes a package housing, an RF transistor amplifier die that is mounted within the package housing, a first capacitor die that is mounted within the package housing, an input leadframe that extends through the package housing to electrically connect to a gate terminal of the RF transistor amplifier die, and an output leadframe that extends through the package housing to electrically connect to a drain terminal of the RF transistor amplifier die. The output leadframe includes an output pad region, an output lead that extends outside of the package housing, and a first arm that extends from one of the output pad region and the output lead to be adjacent the first capacitor die.

In examples, an electronic device comprises a printed circuit board (PCB), an orifice extending through the PCB, and a semiconductor die suspended above the orifice by aluminum bond wires. The semiconductor die is vertically aligned with the orifice and the bond wires coupled to the PCB.

A semiconductor arrangement includes at least one switching device, electrically coupled between a first terminal and a second terminal, at least one diode, coupled in parallel to the at least one switching device between the first terminal and the second terminal, at least one bonding pad, and at least one electrically connecting element. Each of the at least one electrically connecting element is arranged to electrically couple one of the at least one switching device to one of the at least one diode. Each electrically connecting element includes a first end, a second end, and a middle section, and for at least one of the electrically connecting element, the first end is mechanically coupled to the respective switching device, the second end is mechanically coupled to the respective diode, and the middle section is mechanically coupled to at least one of the at least one bonding pad.

A semiconductor device includes a ground plane, a capacitor disposed on the ground plane and having a first top surface, a semiconductor chip disposed on the ground plane and having a second top surface, a bonding wire connecting the first top surface and the second top surface, and a conductive member disposed on the ground plane. The conductive member is electrically connected to the ground plane. The bonding wire extends in a first direction in a planar view normal to the ground plane. The conductive member is positioned apart from the bonding wire in a second direction orthogonally intersecting in the planar view with the first direction.

A layout of electrode pads on a front surface of a first semiconductor chip is different from a layout of them on a second semiconductor chip. An overall layout of the semiconductor chips mounted on the insulated substrate and the layouts of the electrode pads on the front surfaces of the semiconductor chips including the first and second semiconductor chips are determined so that a value of a resistance component and/or a value of a reactance component between each two electrode pads that are the same type respectively on different semiconductor chips and are connected in parallel become the same. As a result, current waveform oscillation between semiconductor devices fabricated on the semiconductor chips, respectively, may be suppressed.

A semiconductor device capable of securing an insulation distance between a semiconductor element and a wiring. The semiconductor device includes a first semiconductor element, a second semiconductor element, a first wiring, and a second wiring. The first semiconductor element includes a first main surface and a second main surface. An electrode is formed on the first main surface. The second semiconductor element is disposed at a position different from a position of the first semiconductor element in a thickness direction. The first wiring includes an end connected to the electrode. The end includes an upper surface and a cut surface. Diameter of the second wiring is smaller than diameter of the first wiring. The second wiring includes a first end and a second end. The first end is directly connected to the upper surface of the end of the first wiring.

A semiconductor module includes: a first metal plate including a first mount part joined with a bottom-surface electrode of a first switching element, a second mount part joined with a positive-electrode terminal, and a first narrow part between the first and second mount parts and being narrower than a part jointing the first switching element to the first mount part and the positive-electrode terminal; a second metal plate being joined with a bottom-surface electrode of a second switching element, and connected to a top-surface electrode of the first switching element; a third metal plate including a sixth mount part joined with a negative-electrode terminal, a seventh mount part connected to a top-surface electrode of the second switching element, and being narrower than the negative-electrode terminal, and a second narrow part between the sixth and seventh mount parts; and a snubber circuit connecting the first and second narrow parts.

A palladium-coated copper bonding wire includes: a core material containing copper as a main component; and a palladium layer on the core material, in which a concentration of palladium relative to the entire wire is 1.0 mass % or more and 4.0 mass % or less, and a work hardening coefficient in an amount of change of an elongation rate 2% or more and a maximum elongation rate εmax % or less of the wire, is 0.20 or less.

An isolation system and isolation device are disclosed. An illustrative isolation device is disclosed to include a transmitter circuit, a detector circuit, a first wire bond, and a second wire bond. The detector circuit is configured to generate a first current in accordance with a first signal. The first wire bond is configured to receive the first current from the transmitter circuit to generate a magnetic flux. The second wire bond is configured to receive the magnetic flux. An induced current in the second wire bond is then detected in the detector circuit. The detector circuit is configured to generate a reproduced first signal, as an output of the detector circuit.