A method of forming a wire loop in connection with a semiconductor package is provided. The method includes the steps of: (1) providing package data related to the semiconductor package to a wire bonding machine; (2) providing at least one looping control value related to a desired wire loop to the wire bonding machine, the at least one looping control value including at least a loop height value related to the desired wire loop; (3) deriving looping parameters, using an algorithm, for forming the desired wire loop; (4) forming a first wire loop on the wire bonding machine using the looping parameters derived in step (3); (5) measuring actual looping control values of the first wire loop formed in step (4) corresponding to the at least one looping control value; and (6) comparing the actual looping control values measured in step (5) to the at least one looping control value provided in step (2).

An electrical device with printed interconnects between packaged integrated circuit components and a substrate as well as a method for printing interconnects between packaged integrated circuit components and a substrate are disclosed. An electrical device with printed interconnects may include a dielectric layer forming a continuous surface between a substrate and a terminal face of an integrated circuit component. The electrical device may further include interconnects formed from a layer of material printed across the continuous surface formed by the dielectric layer to connect electrical terminals on the substrate to electrical terminals on the terminal face of the integrated circuit component.

A semiconductor package is disclosed. The package includes a package substrate having top and bottom major package substrate surfaces, the top major package surface including a die region. A die having first and second major die surfaces is attached onto the die region. The second major die surface is attached to the die region. The first major die surface includes a sensor region and a cover adhesive region surrounding the sensor region. The package also includes applying a cover adhesive to the cover adhesive region on the first major die surface. A protective cover with first and second major cover surfaces and side surfaces is attached to the die using the cover adhesive. The second major cover surface contacts the cover adhesive. The protective cover covers the sensor region. The protective cover includes a recessed structure on the second major cover surface. The recessed structure is located above die bond pads on the die to create an elevated space over peak portions of wire bonds on the die bond pads. An encapsulant is disposed on the package substrate to cover exposed portions of the package substrate, die and bond wires and side surfaces of the protective cover, while leaving the first major cover surface exposed.

A bonding wire for connecting a first pad to a second pad is provided. The bonding wire includes a ball part bonded to the first pad, a neck part formed on the ball part, and a wire part extending from the neck part to the second pad. Less than an entire portion of a top surface of the neck part is covered by the wire part, and the wire part is in contact with the neck part, the ball part, and the first pad.

A wire bonding method for connecting a wire to two different surfaces by bonding with a single wire bonding step. The wire bonding method includes: bonding one end of a wire fed from a distal end of a capillary to a first bonding surface; moving the capillary in the Z direction; moving the capillary the X and/or Y direction; moving the capillary in the X, Y, and/or Z direction, a plurality of times; moving the capillary to a highest position; and bonding another end of the wire to the second bonding surface. The wire bonding method includes, at any timing, rotating the first bonding surface about a rotation axis to move the second bonding surface to a position capable of bonding. An angle formed by the first bonding surface and the second bonding surface on a side where the wire is stretched is 200° or more.

A flip-chip integrated circuit die includes a front side including active circuitry formed therein and a plurality of bond pads in electrical communication with the active circuitry, at least two through-wafer vias extending at least partially though the die and having portions at a rear side of the die, and a bond wire external to the die and electrically coupling the portions of the at least two through-wafer vias at the rear side of the die.

A method and a device for establishing a wire connection between a first contact surface and at least one further contact surface. A contact end of a wire is positioned in a contact position relative to the first contact surface with a wire guiding tool. Subsequently, a mechanical, electrically conductive connection is established between the first contact surface and the contact end with a first solder material connection, and subsequently the wire guiding tool is moved to the further contact surface thus forming a wire section and establishing a further mechanical, electrically conductive connection between the wire section end and the further contact surface with a further solder material connection.

The present disclosure provides a semiconductor device. The semiconductor device includes a substrate, amounting layer, switching elements, a moisture-resistant layer and a sealing resin. The substrate has a front surface facing in a thickness direction. The mounting layer is electrically conductive and disposed on the front surface. Each switching element includes an element front surface facing in the same direction in which the front surface faces along the thickness direction, a back surface facing in the opposite direction of the element front surface, and a side surface connected to the element front surface and the back surface. The switching elements are electrically bonded to the mounting layer with their back surfaces facing the front surface. The moisture-resistant layer covers at least one side surface. The sealing resin covers the switching elements and the moisture-resistant layer. The moisture-resistant layer is held in contact with the mounting layer and the side surface so as to be spanned between the mounting layer and the side surface in the thickness direction.

A semiconductor device includes a MOSFET including a PN junction diode. A unipolar device is connected in parallel to the MOSFET and has two terminals. A first wire connects the PN junction diode to one of the two terminals of the unipolar device. A second wire connects the one of the two terminals of the unipolar device to an output line, so that the output line is connected to the MOSFET and the unipolar device via the first wire and the second wire. In one embodiment the connection of the first wire to the diode is with its anode, and in another the connection is with the cathode.

A semiconductor device includes a shielding wire formed across a semiconductor die and an auxiliary wire supporting the shielding wire, thereby reducing the size of a package while shielding the electromagnetic interference generated from the semiconductor die. In one embodiment, the semiconductor device includes a substrate having at least one circuit device mounted thereon, a semiconductor die spaced apart from the circuit device and mounted on the substrate, a shielding wire spaced apart from the semiconductor die and formed across the semiconductor die, and an auxiliary wire supporting the shielding wire under the shielding wire and formed to be perpendicular to the shielding wire. In another embodiment, a bump structure is used to support the shielding wire. In a further embodiment, an auxiliary wire includes a bump structure portion and wire portion and both the bump structure portion and the wire portion are used to support the shielding wire.