A technique is provided that can prevent cracking of a protective film in the uppermost layer of a semiconductor device and improve the reliability of the semiconductor device. Bonding pads formed over a principal surface of a semiconductor chip are in a rectangular shape, and an opening is formed in a protective film over each bonding pad in such a manner that an overlapping width of the protective film in a wire bonding region of each bonding pad becomes wider than an overlapping width of the protective film in a probe region of each bonding pad.

An electronic device includes a package structure and a conductive lead with a first surface having a first plated layer including nickel tungsten and a second plated layer including tin on the first plated layer. A method includes forming a first plated layer on a first surface of a conductive lead exposed along a bottom side of a molded structure in a panel array, performing a second plating process that forms a second plated layer including tin on the first plated layer, and performing a package separation process that separates an electronic device from the panel array.