Apparatuses relating to a microelectronic package are disclosed. In one such apparatus, a substrate has first contacts on an upper surface thereof. A microelectronic die has a lower surface facing the upper surface of the substrate and having second contacts on an upper surface of the microelectronic die. Wire bonds have bases joined to the first contacts and have edge surfaces between the bases and corresponding end surfaces. A first portion of the wire bonds are interconnected between a first portion of the first contacts and the second contacts. The end surfaces of a second portion of the wire bonds are above the upper surface of the microelectronic die. A dielectric layer is above the upper surface of the substrate and between the wire bonds. The second portion of the wire bonds have uppermost portions thereof bent over to be parallel with an upper surface of the dielectric layer.

In examples, a package comprises a semiconductor die having a device side and a bond pad on the device side, a conductive terminal exposed to an exterior of the package, and an electrical fuse. The electrical fuse comprises a conductive ball coupled to the bond pad, and a bond wire coupled to the conductive terminal. The bond wire is stitch-bonded to the conductive ball.

A stack type sensor package structure includes a substrate, a semiconductor chip disposed on the substrate, a frame disposed on the substrate and aside the semiconductor chip, a sensor chip disposed on the frame, a plurality of wires electrically connecting the sensor chip and the substrate, a transparent layer being of its position corresponding to the sensor chip, a support maintaining the relative position between the sensor chip and the transparent layer, and a package compound disposed on the substrate and partially covering the frame, the support, and the transparent layer. Thus, through disposing a frame within the stack type sensor package structure, the structural strength of the overall sensor package structure is reinforced, and the stability of the wiring of the sensor chip is effectively increased.

A semiconductor assembly includes a face-to-face semiconductor sub-assembly electrically coupled to a circuit board by bonding wires. The face-to-face semiconductor sub-assembly includes top and bottom devices assembled on opposite sides of a routing circuitry, and is disposed in a through opening of the circuit board. The bonding wires provide electrical connections between the routing circuitry and the circuit board to interconnect the devices face-to-face assembled in the sub-assembly with the circuit board for next-level connection from two opposite sides of the circuit board.

Apparatuses relating to a microelectronic package are disclosed. In one such apparatus, a substrate has first contacts on an upper surface thereof. A microelectronic die has a lower surface facing the upper surface of the substrate and having second contacts on an upper surface of the microelectronic die. Wire bonds have bases joined to the first contacts and have edge surfaces between the bases and corresponding end surfaces. A first portion of the wire bonds are interconnected between a first portion of the first contacts and the second contacts. The end surfaces of a second portion of the wire bonds are above the upper surface of the microelectronic die. A dielectric layer is above the upper surface of the substrate and between the wire bonds. The second portion of the wire bonds have uppermost portions thereof bent over to be parallel with an upper surface of the dielectric layer.

A semiconductor device provided according to an aspect of the present disclosure includes a semiconductor element, a bonding target, a first wire, a wire strip and a second wire. The bonding target is electrically connected to the semiconductor element. The first wire is made of a first metal. The first wire includes a first bonding portion bonded to the bonding target and a first line portion extending from the first bonding portion. The wire strip is made of the first metal. The wire strip is bonded to the bonding target. The second wire is made of a second metal different from the first metal. The second wire includes a second bonding portion bonded to the bonding target via the wire strip and a second line portion extending from the second bonding portion.

In examples, a package comprises a semiconductor die having a device side and a bond pad on the device side, a conductive terminal exposed to an exterior of the package, and an electrical fuse. The electrical fuse comprises a conductive ball coupled to the bond pad, and a bond wire coupled to the conductive terminal. The bond wire is stitch-bonded to the conductive ball.

Apparatuses relating to a microelectronic package are disclosed. In one such apparatus, a substrate has first contacts on an upper surface thereof. A microelectronic die has a lower surface facing the upper surface of the substrate and having second contacts on an upper surface of the microelectronic die. Wire bonds have bases joined to the first contacts and have edge surfaces between the bases and corresponding end surfaces. A first portion of the wire bonds are interconnected between a first portion of the first contacts and the second contacts. The end surfaces of a second portion of the wire bonds are above the upper surface of the microelectronic die. A dielectric layer is above the upper surface of the substrate and between the wire bonds. The second portion of the wire bonds have uppermost portions thereof bent over to be parallel with an upper surface of the dielectric layer.

A method of manufacturing a semiconductor device is provided. The method includes attaching a first end of a first bond wire to a first conductive lead and a second end of the first bond wire to a first bond pad of a first semiconductor die. A conductive lead extender is affixed to the first conductive lead by way of a conductive adhesive, the lead extender overlapping the first end of the first bond wire. A first end of a second bond wire is attached to the lead extender, the first end of the second bond wire conductively connected to the first end of the first bond wire.

The invention relates to a heavy-wire bond arrangement, having a substrate (2), a heavy wire (1) and a high-voltage heavy-wire bond connection, in which an end bond section (4) of the heavy wire (1), which extends towards the end (7) of the heavy wire (1), is bonded to the substrate (2), such that in the area of the bond section (4) a bond contact (5) between the heavy wire (1) and the substrate (2) is formed, the heavy wire (1) having a tapering section (6) which adjoins the end of the wire (7) and in which the wire cross-section tapers towards the end of the wire (7). The application additionally relates to a method for producing a heavy-wire bond arrangement.