There is provided a semiconductor device including: a plurality of bumps on a first semiconductor substrate; and a lens material in a region other than the plurality of bumps on the first semiconductor substrate, wherein a distance between a side of a bump closest to the lens material and a side of the lens material closest to the bump is greater than twice a diameter of the bump closest to the lens material, and wherein the distance between the side of the bump closest to the lens material and the side of the lens material closest to the bump is greater a minimum pitch of the bumps.

A SiC semiconductor device is provided that is capable of improving the detection accuracy of the current value of a principal current detected by a current sensing portion by restraining heat from escaping from the current sensing portion to a wiring member joined to a sensing-side surface electrode. The semiconductor device 1 includes a SiC semiconductor substrate, a source portion 27 including a principal-current-side unit cell 34, a current sensing portion 26 including a sensing-side unit cell 40, a source-side surface electrode 5 disposed above the source portion 27, and a sensing-side surface electrode 6 that is disposed above the current sensing portion 26 and that has a sensing-side pad 15 to which a sensing-side wire is joined, and, in the semiconductor device 1, the sensing-side unit cell 40 is disposed so as to avoid being positioned directly under the sensing-side pad 15.

A first semiconductor die is provided, which includes a first substrate, first semiconductor devices, first interconnect-level dielectric material layers, first metal interconnect structures, and first bonding pads. A second semiconductor die is provided, which includes a semiconductor-on-insulator (SOI) substrate, second semiconductor devices, second interconnect-level dielectric material layers, second metal interconnect structures, and second bonding pads. The second bonding pads are bonded to the first bonding pads. A bulk substrate layer of the SOI substrate is removed exposing an insulating material layer of the SOI substrate, which may be retained or also removed. An external bonding pad is electrically connected to a node of the second semiconductor devices.

The present invention comprises: a spool (10); a damper (22); a torch electrode (31); a high-voltage power source circuit (30); a non-bonding detection circuit (40); a first changeover switch (50) switching a connection between the spool (10) and the high-voltage power source circuit (30) or the non-bonding detection circuit (40); and a relay (53) turning on/off a connection between the damper (22) and a spool side of the first changeover switch (50), and comprises a control part (60) that sets the first changeover switch (50) to the high-voltage power source circuit side and turns off the relay (53) to generate electric discharge, and that sets the first changeover switch (50) to the non-bonding detection circuit side and turns on the relay (53) to perform non-bonding detection. Due to this configuration, electric corrosion of a wire damper can be suppressed and non-bonding detection can be carried out with a simple configuration.

A semiconductor device having a first semiconductor section including a first wiring layer at one side thereof; a second semiconductor section including a second wiring layer at one side thereof, the first and second semiconductor sections being secured together with the respective first and second wiring layer sides of the first and second semiconductor sections facing each other; a conductive material extending through the first semiconductor section to the second wiring layer of the second semiconductor section and by means of which the first and second wiring layers are in electrical communication; and an opening, other than the opening for the conductive material, which extends through the first semiconductor section to the second wiring layer.

A semiconductor device having a first semiconductor section including a first wiring layer at one side thereof; a second semiconductor section including a second wiring layer at one side thereof, the first and second semiconductor sections being secured together with the respective first and second wiring layer sides of the first and second semiconductor sections facing each other; a conductive material extending through the first semiconductor section to the second wiring layer of the second semiconductor section and by means of which the first and second wiring layers are in electrical communication; and an opening, other than the opening for the conductive material, which extends through the first semiconductor section to the second wiring layer.

A semiconductor device having a plurality of wiring layers including a first wiring layer and a second wiring layer, with the first wiring layer being the uppermost layer and including a pad PD that has a first region for bonding a copper wire, and a second region for bringing a probe into contact with the pad. The second wiring layer is one layer below the first wiring layer and includes a first wiring line arranged immediately below the second region of the pad, the second wiring layer having no conductor pattern at a region overlapping with the first region of the pad PD.

The present disclosure relates to an image pickup device and an electronic apparatus that enable further downsizing of device size. The device includes: a first structural body and a second structural body that are layered, the first structural body including a pixel array unit, the second structural body including an input/output circuit unit, and a signal processing circuit; a first through-via, a signal output external terminal, a second through-via, and a signal input external terminal that are arranged below the pixel array, the first through-via penetrating through a semiconductor substrate constituting a part of the second structural body, the second through-via penetrating through the semiconductor substrate; a substrate connected to the signal output external terminal and the signal input external terminal; and a circuit board connected to a first surface of the substrate. The present disclosure can be applied to, for example, the image pickup device, and the like.

An apparatus and method for reducing the volume of a resource allocation information message in a broadband wireless communication system are provided. The method includes transmitting a message including information indicating a periodicity of an uplink control channel for an initial network entry; and receiving an uplink signal for the initial network entry through the uplink control channel.

Disclosed is a method of fabricating a semiconductor image sensor device. The method includes providing a substrate having a pixel region, a periphery region, and a bonding pad region. The substrate further has a first side and a second side opposite the first side. The pixel region contains radiation-sensing regions. The method further includes forming a bonding pad in the bonding pad region; and forming light-blocking structures over the second side of the substrate, at least in the pixel region, after the bonding pad has been formed.