An electronic device includes a base body, a functional element disposed on the base body, a wiring disposed on the base body and electrically connected to the functional element, and a terminal disposed on the base body and electrically connected to the wiring, wherein the terminal includes a non-overlapping region which does not overlap with the wiring. Further, the terminal includes an overlapping region which overlaps with the wiring.

A method for determining a bonding pad spacing on the surface of a bonding wire chip includes the steps of setting a loop height (K); selecting a capillary, measuring an expansion angle of a capillary sharp mouth (C); measuring the diameter of the capillary sharp mouth (T); measuring the hole diameter of the capillary (H); and determining a bonding pad spacing on the surface of a bonding wire chip (P). The formula is as follows: P=(T+H)/2+[tan(C/2)]*K. This method more accurately determines bonding pad spacing on the surface of a bonding wire chip, thereby providing a wider performance adjustment space. Additionally, problems, such as mutual inductance abnormalities caused by wire deformation or even by short circuits with other circuits due to the contact between a packaged capillary and a bonded wire can be lowered, thereby improving the working efficiency and reducing the number of times verification is performed.

A semiconductor device capable of suppressing propagation of a crack caused by a temperature cycle at a bonding part between a bonding pad and a bonding wire is provided. A semiconductor device according to an embodiment includes a semiconductor chip having bonding pads and bonding wires. The bonding pad includes a barrier layer and a bonding layer formed on the barrier layer and formed of a material containing aluminum. The bonding wire is bonded to the bonding pad and formed of a material containing copper. An intermetallic compound layer formed of an intermetallic compound containing copper and aluminum is formed so as to reach the barrier layer from the bonding wire in at least a part of the bonding part between the bonding pad and the bonding wire.

A photoelectric conversion device includes a first semiconductor substrate including a photoelectric conversion unit for generating a signal charge in accordance with an incident light, and a second semiconductor substrate including a signal processing unit for processing an electrical signal on the basis of the signal charge generated in the photoelectric conversion unit. The signal processing unit is situated in an orthogonal projection area from the photoelectric conversion unit to the second semiconductor substrate. A multilayer film including a plurality of insulator layers is provided between the first semiconductor substrate and the second semiconductor substrate. The thickness of the second semiconductor substrate is smaller than 500 micrometers. The thickness of the second semiconductor substrate is greater than the distance from the second semiconductor substrate and a light-receiving surface of the first semiconductor substrate.

A method includes bonding a first wafer to a second wafer, with a first plurality of dielectric layers in the first wafer and a second plurality of dielectric layers in the second wafer bonded between a first substrate of the first wafer and a second substrate in the second wafer. A first opening is formed in the first substrate, and the first plurality of dielectric layers and the second wafer are etched through the first opening to form a second opening. A metal pad in the second plurality of dielectric layers is exposed to the second opening. A conductive plug is formed extending into the first and the second openings.

A capacitor that includes a substrate having a first main surface and a second main surface that are opposite to each other, and a plurality of trench portions on the first main surface; a dielectric film adjacent the first main surface of the substrate and extending into interiors of the plurality of trench portions; a conductor film on the dielectric film and extending into the interiors of the plurality of trench portions; and a bonding pad electrically connected to the conductor film. In a plan view from a direction normal to the first main surface of the substrate, the plurality of trench portions are arranged in second regions disposed along a second direction and not in first regions disposed along a first direction in which a bonding wire electrically connected to the bonding pad extends.

A semiconductor layer includes an opening, and in a joint surface between structures, a portion between a semiconductor layer and an opening in a direction in which the semiconductor layers are stacked together includes a plurality of conductor portions and an insulator portion located between the plurality of conductor portions in a direction orthogonal to the direction.

In an embodiment, a semiconductor device includes a semiconductor body having a first major surface, a second major surface opposing the first major surface and at least one transistor device structure, a source pad and a gate pad arranged on the first major surface, a drain pad and at least one further contact pad coupled to a further device structure. The drain pad and the at least one further contact pad are arranged on the second major surface.

A method of manufacturing a bond pad structure may include depositing an aluminum-copper (AlCu) layer over a dielectric layer; and depositing an aluminum-chromium (AlCr) layer directly over the AlCu layer.

A discharge examination device for examining discharge of a wire-bonding apparatus that applies a voltage between a torch electrode and a wire to procure the discharge therebetween includes a current detection unit, a timer unit and a discharge determination unit. The current detection unit detects a discharge current flowing through the wire. The timer unit measures discharge detection time after application of the voltage before detection of the discharge current. The discharge determination unit determines whether or not the discharge is abnormal based on the discharge detection time. With this, a discharge examination device, a wire-bonding apparatus, and a discharge examination method that are capable of detecting abnormality of discharge are provided.