A circuit structure including a pad assembly, a bonding pad assembly, and a bonding assembly is provided. The pad assembly includes a first pad, a second pad, and a third pad which are separated from one another. The bonding pad assembly is located on one side of the pad assembly and includes a first bonding pad. The bonding assembly includes a first bonding wire, a second bonding wire, and a plurality of bonding members. The first bonding wire is connected to the first bonding pad and the first pad. The second bonding wire is connected to the first bonding pad and the third pad. The bonding members are connected among the first pad, the second pad, and the third pad. The circuit structure provided here may have an improved wire bonding efficiency and an increased distribution density of bonding points, and the number of bonding wires may be reduced.

A power semiconductor device, a power semiconductor module and a power semiconductor device processing method are provided. The power semiconductor device includes a first load terminal structure, a second load terminal structure, and a semiconductor structure electrically coupled to each load terminal structure and configured to carry a load current. The first load terminal structure includes a conductive layer in contact with the semiconductor structure, a bonding block configured to be contacted by at least one bond wire and to receive at least a part of the load current from the at least one bond wire and/or the conductive layer, a support block having a hardness greater than the hardness of the conductive layer and the bonding block. The bonding block is mounted on the conductive layer via the support block, and a zone is arranged within the conductive layer and/or the bonding block, the zone exhibiting nitrogen atoms.

A semiconductor device is proposed. The semiconductor device includes a wiring metal layer structure. The semiconductor device further includes a dielectric layer structure arranged directly on the wiring metal layer structure. The semiconductor device further includes a bonding pad metal layer structure arranged, at least partly, directly on the dielectric layer structure. A layer thickness of the dielectric layer structure ranges from 1% to 30% of a layer thickness of the wiring metal layer structure. The wiring metal layer structure and the bonding pad metal structure are electrically connected through openings in the dielectric layer structure.

A wire bonding method for connecting a wire to two different surfaces by bonding with a single wire bonding step. The wire bonding method includes: bonding one end of a wire fed from a distal end of a capillary to a first bonding surface; moving the capillary in the Z direction; moving the capillary the X and/or Y direction; moving the capillary in the X, Y, and/or Z direction, a plurality of times; moving the capillary to a highest position; and bonding another end of the wire to the second bonding surface. The wire bonding method includes, at any timing, rotating the first bonding surface about a rotation axis to move the second bonding surface to a position capable of bonding. An angle formed by the first bonding surface and the second bonding surface on a side where the wire is stretched is 200° or more.

An apparatus is provided that includes a die stack having a first die and a second die disposed above a substrate, and a capacitor die disposed in the die stack between the first die and the second die. The capacitor die includes a plurality of integrated circuit capacitors that are configured to be selectively coupled together to form a desired capacitor value coupled to at least one of the first die and the second die.

A semiconductor device manufacturing method includes: applying solder to an arrangement area of a substrate, the substrate having a connection area to which a wiring member is to be directly connected, the connection area neighboring the arrangement area; arranging a component on the arrangement area via the solder; and soldering the component to the arrangement area by heating the solder while covering the connection area. A soldering support jig includes a columnar covering member having a covering surface at a bottom of the columnar covering member.

The present invention discloses a packaging structure of a high-power radio frequency device, comprising a plurality of radio frequency power chips connected in parallel and a packaging flange; and the plurality of radio frequency power chips are arranged obliquely in a packaging cavity of the packaging flange, to reduce the number of input bond-wires of the radio frequency power chips, so that the input bond-wires and output bond-wires are not overlapped in space. The plurality of chips are arranged obliquely on the packaging flange, which significantly improves the utilization rate of packaging space and achieves the purpose of high-power output.

A semiconductor device having a semiconductor module. The semiconductor module includes first and second conductor layers facing each other, a first semiconductor element provided between the first and second conductor layers, positive and negative electrode terminals respectively provided on edge portions of the first and second conductor layers at a first side of the semiconductor module in a top view of the semiconductor module, control wiring that is electrically connected to the first control electrode, and that extends out of the first and second conductor layers at a second side of the semiconductor module that is opposite to the first side in the top view, and a control terminal that is electrically connected to the control wiring, that is positioned outside the first and second conductor layers in the top view, and that has an end portion that is aligned with the positive and negative electrode terminals.

A display apparatus includes a support substrate, a plurality of light emitting structures regularly arranged on the support substrate, and a wavelength conversion part disposed on the plurality of light emitting structures. The wavelength conversion part includes light transmitting portions and blocking portions, the light transmitting portions being disposed on the light emitting structures, respectively, and each of the light transmitting portions including a phosphor for converting a wavelength of light emitted from the corresponding light emitting structure. The support substrate includes a plurality of conductive patterns electrically connected to the light emitting structures, and the light emitting structures are coupled to the plurality of conductive patterns.

A pressure sensor device includes a semiconductor die having a die surface that includes a pressure sensitive area; and a bond wire bonded to a first peripheral region of the die surface and extends over the die surface to a second peripheral region of the die surface, wherein the pressure sensitive area is interposed between the second peripheral region and the first peripheral region, wherein the bond wire comprises a crossing portion that overlaps an area of the die surface, and wherein the crossing portion extends over the pressure sensitive area that is interposed between the first and the second peripheral regions.