A method of forming a microelectronic device structure comprises coiling a portion of a wire up and around at least one sidewall of a structure protruding from a substrate. At least one interface between an upper region of the structure and an upper region of the coiled portion of the wire is welded to form a fused region between the structure and the wire.

A method of forming a microelectronic device structure comprises coiling a portion of a wire up and around at least one sidewall of a structure protruding from a substrate. At least one interface between an upper region of the structure and an upper region of the coiled portion of the wire is welded to form a fused region between the structure and the wire.

A GaN-based power device (1) includes a bonding pad portion (2) to which an aluminum wire (3) is bonded by ultrasonic bonding, and a second electrode (42) which is formed under the bonding pad (2). Ultrasonic vibration is applied such that an angle between a direction in which the ultrasonic vibration is applied to a wire and a length direction of the second electrode (42) is 045.

A semiconductor device includes a semiconductor element, a lead, and a wire including a first bonding portion bonded to the semiconductor element and a second bonding portion bonded to the lead. The semiconductor element includes a first bonding surface which faces to a first side in a first direction and to which the first bonding portion is bonded. The lead includes a second bonding surface and a third bonding surface both facing to the first side in the first direction and forming an angle larger than 180 on the first side in the first direction. The semiconductor device further includes a ball bump extending onto both the second bonding surface and the third bonding surface. The second bonding portion is bonded to the lead via the ball bump.

An electronic component includes a cooling member, a semiconductor substrate, and a base member in which the cooling member and the semiconductor substrate are placed, wherein the cooling member is arranged between the base member and the semiconductor substrate, wherein the semiconductor substrate includes a first electrode, wherein the base member includes a second electrode, wherein the first electrode and the second electrode are connected by a conductive wire, and wherein balls are formed on both of a bonded portion of the first electrode and the conductive wire, and a bonded portion of the second electrode and the conductive wire.

A semiconductor device includes a substrate, a conductive part formed on a front surface of the substrate, a semiconductor chip disposed on the front surface of the substrate, a control unit that controls the semiconductor chip, a sealing resin that covers the semiconductor chip, the control unit and the conductive part, and a first lead bonded to the conductive part and partially exposed from the sealing resin. The conductive part includes a first pad and a second pad disposed apart from each other. The first lead is bonded to the first pad and the second pad.