An apparatus includes a needle and a needle actuator to move the needle to a position at which the needle presses an electrically-actuatable element into contact with a circuit trace. When the needle presses the electrically-actuatable element into contact with the circuit trace, a dampener, arranged with the needle and the needle actuator, dampens a force applied to the electrically-actuatable element.

The present invention relates to a sintering device or diffusion soldering device for connecting components of at least one electronic assembly by means of pressure sintering, comprising an evacuatable process chamber in which an upper tool and a lower tool are arranged, between which the assembly is held and which are displaceable relative to one another in their distance apart to exert a press force, wherein the process chamber comprises a base body having on its upper side an access opening and a cover which is adjustable between a closed position in which the access opening is closed by the cover and an open position, wherein the upper tool is supported on the cover in the closed position of the cover at least during the exertion of the press force.

A bond head assembly for bonding a semiconductor element to a substrate is provided. The bond head assembly includes a base structure, a heater, and a clamping system securing the heater to the base structure. The clamping system includes a plurality of elastic elements constraining the heater along a plurality of axes.

There is provided a bonding apparatus for bonding substrates together, which includes: a first holding part configured to adsorptively hold a first substrate by vacuum-drawing the first substrate on a lower surface of the first substrate; a second holding part provided below the first holding part and configured to adsorptively hold a second substrate by vacuum-drawing the second substrate on an upper surface of the second substrate; a pressing member provided in the first holding part and configured to press a central portion of the first substrate; and a plurality of substrate detection parts provided in the first holding part and configured to detect a detachment of the first substrate from the first holding part.

An apparatus includes a needle and a needle actuator to move the needle to a position at which the needle presses an electrically-actuatable element into contact with a circuit trace. When the needle presses the electrically-actuatable element into contact with the circuit trace, a dampener, arranged with the needle and the needle actuator, dampens a force applied to the electrically-actuatable element.

A bond head assembly for bonding a semiconductor element to a substrate is provided. The bond head assembly includes a base structure, a heater, and a clamping system securing the heater to the base structure. The clamping system includes a plurality of elastic elements constraining the heater along a plurality of axes.

A bond head assembly for bonding a semiconductor element to a substrate is provided. The bond head assembly includes a base structure, a heater, and a clamping system securing the heater to the base structure. The clamping system includes a plurality of elastic elements constraining the heater along a plurality of axes.

A semiconductor device includes a semiconductor substrate, an interconnect structure over the semiconductor substrate, and a redistribution layer over the interconnect structure. The redistribution layer includes bonding vias arranged in a plurality of arrays with rows each extending along a first direction and columns each extending along a second direction. Across the redistribution layer, a ratio of a total number of the columns of the arrays along the first direction over a total number of the rows of the arrays along the second direction ranges from about 0.5 to about 1.5.

A disclosed system is configured to bond a chip to a substrate and includes a chip processing subsystem that is configured to receive the chip and to expose the chip to a first plasma, and a substrate processing subsystem that is configured to receive the substrate and to expose the substrate to a second plasma. The system further includes a bonding subsystem that is configured to align the chip with the substrate, to force the chip and the substrate into direct mechanical contact with one another by application of a compressive force, and to apply heat to at least one of the chip or the substrate. Application of the compressive force and the heat thereby bonds the chip to the substrate. The first and second plasmas may include H.sub.2/N.sub.2, H.sub.2/Ar, H.sub.2/He, NH.sub.3/N.sub.2, NH.sub.3/Ar, or NH.sub.3/He and the chip and substrate may be maintained in a low oxygen environment.