A wire bonding apparatus of an aspect includes: a clamp apparatus, having a pair of arms; a stage, moving the clamp apparatus in a horizontal direction; a rod member; a contact detection part, detecting contact between the rod member and the clamp apparatus; and a control apparatus, controlling opening and closing of the pair of arms and an operation of the stage and acquiring position information of the clamp apparatus. The control apparatus obtains an opening amount of the pair of arms based on position information of the clamp apparatus at a time when an outer side surface of a first arm contacts the rod member in a state where the pair of arms are closed and position information of the clamp apparatus at the time when the outer side surface of the first arm contacts the rod member in a state where the pair of arms are open.

Various embodiments of the present technology may comprise a method and apparatus for improved bonding and may operate in conjunction with a main platform configured to support a substrate. Movable members may allow the substrate to be positioned on the main platform when rotated to a first position and apply a force to a predetermined area on an upward facing surface of the substrate when rotated to the second position.

Method for producing wire bond connections between an electronic component or a module and a substrate with energy input into a bonding wire by an ultrasonic transducer, wherein during the energy input for forming a first wire bond connection, at least one bonding parameter characterizing the instantaneous state of the bonding wire is measured in dependence on time, the curve shape of the time dependence is differentiated by means of predetermined comparative criteria or curves into three curve sections and hereby the temporal course of the method into three phases, to be specific, a cleaning, a fusion and a tempering phase, and the energy fed into the ultrasonic transducer and/or the bonding force exerted on the bonding wire and/or the duration of the energy input into at least one partial section of at least the cleaning and the fusion phase, in particular each of the cleaning, fusion and tempering phases is/are controlled independent of the measurement result in quasi real time during the formation of the first wire bond connection or during the subsequent formation of a second wire bond connection of the same type in dependence on the curve shape in the associated curve section in a phase-specific manner.

To provide a wire bonding method and a wire bonding device capable of stably forming a free air ball having a large ball diameter while suppressing oxidation of the free air ball, in addition to supply of an oxidation prevention gas from gas supply means (10) into an insertion portion (32), an oxidation prevention gas is supplied from a gas supply nozzle (40), which is arranged outside the insertion portion (32), so as to cover an inlet of the insertion portion (32). Under a state in which a leading end of a wire (74) is positioned inside the insertion portion (32), and in which a leading end of a capillary (3) is positioned outside the insertion portion (32), spark discharge is generated. With this, a free air ball (75) having a large ball diameter can be formed while suppressing oxidation of the free air ball (75) and stabilizing the free air ball (75).

As one embodiment, a method of manufacturing a semiconductor device includes the following steps. That is, the method of manufacturing a semiconductor device includes a first step of applying ultrasonic waves to a ball portion of a first wire in contact with a first electrode of the semiconductor chip while pressing the ball portion with a first load. In addition, the method of manufacturing a semiconductor device includes a step of, after the first step, applying the ultrasonic waves to the ball portion while pressing the ball portion with a second load larger than the first load, thereby bonding the ball portion and the first electrode.

To provide a wire bonding apparatus, which is insusceptible to a bonding state at a second bonding point due to a wire cut error or the like, or to members such as a capillary and a wire, and is capable of automatically protruding the wire from a leading end of the capillary, provided is a wire bonding apparatus including: a capillary (6) having a through hole through which a wire (40) is to be inserted; a holding unit, which is provided above the capillary (6), and is configured to hold the wire (40) inserted through the capillary (6); and a vibrating unit configured to vertically vibrate the capillary (6). Under a state in which the holding unit holds the wire (40), the vibrating unit vertically vibrates the capillary (6) so that the wire (40) is protruded from the leading end of the capillary.

A method of manufacturing a semiconductor device includes: a wire tail forming step of forming a wire loop 130 between a first bonding point and a second bonding point with a bonding tool 40, and then cutting a portion of a wire 42 extending from a tip of the bonding tool 40 to thereby form a wire tail 43 at the tip of the bonding tool 40; and a wire tail bending step of bending the wire tail 43 so as to direct a tip 43a of the wire tail 43 upward by descending the bonding tool 40 toward the second bonding point with the wire loop 130 formed thereat and pressing the wire tail 43 against a portion of the wire loop 130 located above the second bonding point. Thus, the wire tail can be bent easily and efficiently.

The present invention includes a bonding process of bonding a wire to an electrode by a capillary, a wire feeding process of raising the capillary to feed the wire from a tip, a pressing process of moving the capillary to press an inner edge of the capillary against the wire, a scraping process of vibrating the tip of the capillary to form a scrape on a side surface of the wire by the inner edge of the capillary, and a cut-off process of closing a wire clamper and cutting off the wire at a portion of the scrape to form a pin wire extending vertically upward from the electrode.

A method of manufacturing a semiconductor device is provided. A bonding tool with a wire tail extending out of the tip thereof is lowered to bring the tip of the wire tail into contact with a bonding surface of the semiconductor device. Next, the bonding tool in a direction intersecting with the axial direction of the bonding tool (Z direction) is moved to bend the wire tail with the tip of the wire tail in contact with the bonding surface. Then the bonding tool is lowered to form the wire tail into a predetermined shape such that the tip of the wire tail points upward. And then, a wire looping step, a second bonding step and a wire cutting step are performed. This allows the wire tail to be formed easily and efficiently into a predetermined shape.

A semiconductor device manufacturing method includes: raising and moving a bonding tool, while paying out a wire, in a direction from a second toward a first bonding point to form in the wire a cut portion bent in a vicinity of the second bonding point; lowering and moving a tip of the bonding tool to the cut portion; lowering the bonding tool vertically to thin the cut portion; raising the bonding tool while paying out the wire; and moving the bonding tool in a direction away from the first and second bonding points and along a wire direction connecting the first and second bonding points and then cutting the wire at the cut portion to form a wire tail. This allows the length of the wire tail to be adjusted easily and efficiently to be constant.