Method to fabricate high-rise three-dimensional Integrated-Circuits (3D-ICs) is described. It has the major advantage over all the other known methods and prior arts to fabricate or manufacture 3D-ICs in that it substantially reduces RC-delays and fully eliminates or very substantially reduces the large and bulky electrically conductive Through-Silicon-VIAs in monolithic 3D integration. This enables the 3D-ICs to have faster operational speed with denser device integration.

According to embodiments, a semiconductor manufacturing apparatus includes a control circuit configured to acquire, for a pair of substrates including a first substrate and a second substrate, a warp amount of the first substrate, the warp amount of the first substrate including an amount of protrusion of a portion of the first substrate relative to an edge of the first substrate; determine a desired size for a gap between the first and second substrates based on the acquired warp amount; and control a chuck movement device to move one of the first and second substrates to adjust the gap to the determined size before the first and second substrates are bonded.

Methods and apparatus for die shape modification bonding are disclosed. A disclosed apparatus to adjust a die for bonding to a target includes interface circuitry, machine-readable instructions, and at least one processor circuit to be programmed by the machine-readable instructions to determine a shape profile of the die, determine an adjustment of the shape profile with respect to the bonding of the die to the target, and cause at least one of (i) an actuator or (ii) a vacuum device of a placer that carries the die to adjust the shape profile based on the determined adjustment.

A bonding system includes a substrate transfer device configured to transfer a first substrate and a second substrate to a bonding apparatus, a first holding plate configured to hold the first substrate from an upper surface side, and a second holding plate disposed below the first holding plate and configured to hold the second substrate from a lower surface side so that the second substrate faces the first substrate. The substrate transfer device includes a first holding part capable of holding the first substrate from the upper surface side, and a second holding part disposed below the first holding part and capable of holding the second substrate from the lower surface side. The first holding part and the second holding part are configured to receive and hold the first substrate and the second substrate at the same time from the first holding plate and the second holding plate.

A method of manufacturing a semiconductor device includes forming a first metal pad in each of a plurality of first regions on a first substrate so that warpage is generated on the first substrate. The method further includes forming a second metal pad in each of a plurality of second regions on a second substrate via a predetermined pattern. The method further includes bonding, after forming the first metal pad and the second metal pad, the first substrate with the second substrate. Moreover, the method further includes: making a correction, at a time of forming the predetermined pattern in each of the plurality of second regions on the second substrate, to change a position of the predetermined pattern in each of the plurality of second regions in a direction of being closer to a center of the second substrate for a first direction and to change the position of the predetermined pattern in a direction of being farther from the center of the second substrate for a second direction.

An apparatus for wafer bonding includes a first bearing table configured to hold a first wafer provided with at least one first alignment mark; a second bearing table, opposite to the first bearing table, and configured to hold a second wafer provided with at least one second alignment mark; an alignment component, located on at least a side of the first or second bearing table, and configured to determine first and second position parameters of the first and second alignment marks, respectively, by using an optical beam; a mobile component, connected to the first and second bearing tables, and configured to adjust, according to the first an second position parameters, a relative position between the first and second wafers until a relative position between the first and second alignment marks satisfies a predetermined bonding condition; and a bonding component, connected to the first and second bearing tables, and configured to bond the first wafer to the second wafer.