Provided is a semiconductor device including an asymmetric electrode arrangement in which a plurality of electrodes are arranged asymmetrically in a vertical or horizontal direction.

A three-dimensional mounting method for successively laminating N number of upper-layer joining materials includes positioning a first upper-layer joining material relative to a lowermost-layer joining material by recognizing an alignment position of the lowermost-layer joining material and a lower face alignment position of the first upper-layer joining material by a two-field image recognition unit, storing positional coordinates of the alignment position of the lowermost-layer joining material, positioning an (n+1)-th upper-layer joining material relative to an n-th upper-layer joining material by recognizing an upper face alignment position of the n-th upper-layer joining material and a lower face alignment position of the (n+1)-th upper-layer joining material, storing positional coordinates of the upper face alignment position of the n-th upper-layer joining material, recognizing an upper face alignment position of the N-th uppermost-layer joining material, and storing positional coordinates of the upper face alignment position of the N-th uppermost-layer joining material.

A method of forming a semiconductor package includes: forming a first package component including a first and a second conductive bumps; forming a second package component including a third and a fourth conductive bumps, where dimensions of the first and second conductive bumps are less than dimensions of the third and fourth conductive bumps; and forming a first and a second joint structures to bond the second package component to the first package component. A first angle between an exposed sidewall of the first conductive bump and a tangent line at an end point of a boundary of the first joint structure on the sidewall of the first conductive bump is less than a second angle between an exposed sidewall of the second conductive bump and a tangent line at an end point of a boundary of the second joint structure on the sidewall of the second conductive bump.

A semiconductor package according to an embodiment includes a first semiconductor die, a plurality of bonding pads on the first semiconductor die, a plurality of connection members on the plurality of bonding pads, wherein each connection member of the plurality of connection members is disposed on a corresponding bonding pad of the plurality of bonding pads, a second semiconductor die on the plurality of connection members, and an anisotropic conductive film between the first semiconductor die and the second semiconductor die, and between the plurality of bonding pads and the plurality of connection members, including an insulating film, and conductive particles inside the insulating film, wherein the conductive particles are positioned between each of the plurality of connection members and the corresponding bonding pad of the plurality of bonding pads.

The present disclosure provides a method for inspecting a semiconductor bonded structure. The method includes: obtaining a first image of a first connector of a first semiconductor structure; obtaining a second image of a second connector of a second semiconductor structure, wherein the second connector corresponds to the first connector; deriving an overlay image based on the first image and the second image; and evaluating an alignment of the first connector and the second connector based on the overlay image.

A method of forming a package includes: forming a first package component including first and second conductive bumps; forming a second package component including third and fourth conductive bumps; and bonding the first package component to the second package component through first and second joint structures. The first and second conductive bumps are smaller than the third and fourth conductive bumps. The first joint structure partially covers the first and third conductive bumps. The second joint structure partially covers the second and fourth conductive bumps. An angle between a sidewall of the first conductive bump and a tangent line at a boundary of the first joint structure on the sidewall of the first conductive bump is greater than an angle between a sidewall of the second conductive bump and a tangent line at a boundary of the second joint structure on the sidewall of the second conductive bump.